zo102
Abstract: MRF873 motorola rf spice QR01 8E-15 734P ideal amplifier RF Power Transistor spice ZO13
Text: Simulating Class C RF Amplifiers SPICE can be a versatile tool for RF work as long a few simple precautions are taken. Significant parasitics must be included in the circuit description, models of active devices must be represented using subcircuits, and selection of transient analysis options must be considered. The transient options include
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870MegHz
zo102
MRF873
motorola rf spice
QR01
8E-15
734P
ideal amplifier
RF Power Transistor spice
ZO13
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NONLINEAR MODEL LDMOS
Abstract: No abstract text available
Text: Slide 1 Extracting RF Mosfet Spice Models MTT 1998 - Baltimore Md. by S. K. Leong Polyfet Rf Devices www.polyfet.com This presentation is available on our web site Slide 2 Why simulate? n n n n n n n Simulation - It’s the only way! Fast accurate results. What if analysis.
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TRANSISTOR MARKING YB
Abstract: BFP405F marking al
Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405F
100MHz.
EHA07307
May-29-2001
TRANSISTOR MARKING YB
BFP405F
marking al
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marking ams
Abstract: TRANSISTOR MARKING YB BFP420F EHA07307 transistor bI 240 nh TRANSISTOR DEC07
Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP420F
100MHz.
EHA07307
Dec-07-2001
marking ams
TRANSISTOR MARKING YB
BFP420F
EHA07307
transistor bI 240
nh TRANSISTOR
DEC07
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TRANSISTOR MARKING YB
Abstract: BFP420F MARKING 1G TRANSISTOR
Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ms = 20 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP420F
100MHz.
EHA07307
May-29-2001
TRANSISTOR MARKING YB
BFP420F
MARKING 1G TRANSISTOR
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TRANSISTOR MARKING YB
Abstract: TSFP-4 BFP405F CJE marking diode
Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405F
100MHz.
EHA07307
Dec-07-2001
TRANSISTOR MARKING YB
TSFP-4
BFP405F
CJE marking diode
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Untitled
Abstract: No abstract text available
Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP420F
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TRANSISTOR MARKING FA
Abstract: EHA07307 CJE marking diode
Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405F
TRANSISTOR MARKING FA
EHA07307
CJE marking diode
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EHA07307
Abstract: CJE marking diode
Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405F
EHA07307
CJE marking diode
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142001
Abstract: BFP490 SCT595 SCT-595
Text: SIEGET 25 BFP490 NPN Silicon RF Transistor 4 For high power amplifiers 5 Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 8.5 dB at 1.8 GHz 3 Transition frequency fT > 17 GHz 2 Gold metallization for high reliability 1 SIEGET 25 GHz fT - Line
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BFP490
VPW05980
SCT595
200mA
Aug-14-2001
142001
BFP490
SCT595
SCT-595
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Untitled
Abstract: No abstract text available
Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP420F
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TA 490
Abstract: SCT-595 490 transistor 09326
Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4 For high power amplifiers 5 Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz 3 Transition frequency fT > 17 GHz 2 Gold metallization for high reliability 1 SIEGET 25 GHz fT - Line
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VPW05980
SCT-595
200mA
Dec-13-1999
TA 490
SCT-595
490 transistor
09326
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093.266
Abstract: 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490
Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4 For high power amplifiers Compression point P-1dB = 26.5 dBm at 1.8 GHz 5 maxim. available Gain Gma = 8.5 dB at 1.8 GHz Transition frequency fT > 17 GHz Gold metallization for high reliability SIEGET 25 GHz fT - Line
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VPW05980
SCT-595
200mA
Nov-17-2000
093.266
09326
V201200
equivalent transistor K 3531
IC 7479
SPICE 2G6
490 transistor
BFP490
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BFP405 ALs
Abstract: BFP405
Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3 For low current applications 4 For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405
VPS05605
OT343
-j100
Aug-20-2001
BFP405 ALs
BFP405
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BFP450
Abstract: ESD spice
Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability
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BFP450
VPS05605
OT343
50Ohm
-j100
Aug-20-2001
BFP450
ESD spice
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability
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OCR Scan
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Q62702-F1590
OT-343
2200b
IS21I2
fl235bQS
0122QQ7
0235b05
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pin diagram of bf 494 transistor
Abstract: siemens products transistor
Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability
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OCR Scan
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Q62702-F1721
SCT-595
200mA
pin diagram of bf 494 transistor
siemens products transistor
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Marking ANs
Abstract: Transistor C 5198 b 514 transistor BFP450
Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability
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OCR Scan
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Q62702-F1590
OT-343
Marking ANs
Transistor C 5198
b 514 transistor
BFP450
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093.266
Abstract: pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502
Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Prelim inary data • For high power amplifiers • Compression point P_1dB = 26.5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency ^ > 1 7 GHz • Gold metalization for high reliability
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Q62702-F1721
SCT-595
200mA
093.266
pin diagram of bf 494 transistor
b 595 transistor schematic
PA 1515 transistor
transistor BF 502
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Semiconductor 1346 transistor
Abstract: DIODE bfp 86 marking 53 Sot-343
Text: SIEMENS SI EG ET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability
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Q62702-F1591
OT-343
Semiconductor 1346 transistor
DIODE bfp 86
marking 53 Sot-343
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BF 914 transistor
Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
Text: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability
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Q62702-F1592
OT-343
BF 914 transistor
transistor R 405
transistor bf 405
transistor 1546
405 marking
transistor s parameters noise
transistor BF 914
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TEA 1091
Abstract: DIODE bfp 86 siemens rs 1091
Text: SIEMENS SI EGET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability
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OCR Scan
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Q62702-F1591
OT-343
IS21I2
235LG5
E35bD5
01EEQQ0
TEA 1091
DIODE bfp 86
siemens rs 1091
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transistor R 405
Abstract: No abstract text available
Text: SIEMENS SI EGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability
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OCR Scan
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Q62702-F1592
OT-343
a235b05
transistor R 405
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f j = 45 GHz
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OCR Scan
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Q62702-F1794
OT-343
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