Untitled
Abstract: No abstract text available
Text: 2C5339HV Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)5.0
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2C5339HV
time100n
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TRANSISTOR SMD kl3
Abstract: P-LSSOP20-4 fra4 transistor bc 549
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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FMR27
R8C/32C
REJ09B0573-0100
TRANSISTOR SMD kl3
P-LSSOP20-4
fra4
transistor bc 549
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h-12-H
Abstract: SDA28 REJ09B0001 2CM06 DTC 304-2 user manual
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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R8C/32A
R8C/33A
h-12-H
SDA28
REJ09B0001
2CM06
DTC 304-2 user manual
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L33A SMD
Abstract: smd TRANSISTOR code b6 l36a adc 809 wk1 smd EA1 transistor smd PRQP0100JD-B smd code book R8C 702 TRANSISTOR smd l33a
Text: REJ09B0441-0010 R8C/L35A Group, R8C/L36A Group, R8C/L38A Group, R8C/L3AA Group, 16 R8C/L35B Group, R8C/L36B Group, R8C/L38B Group, R8C/L3AB Group Hardware Manual RENESAS MCU R8C FAMILY / R8C/Lx SERIES Preliminary All information contained in these materials, including products and product specifications,
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REJ09B0441-0010
R8C/L35A
R8C/L36A
R8C/L38A
R8C/L35B
R8C/L36B
R8C/L38B
L33A SMD
smd TRANSISTOR code b6
l36a
adc 809
wk1 smd
EA1 transistor smd
PRQP0100JD-B
smd code book R8C
702 TRANSISTOR smd
l33a
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Untitled
Abstract: No abstract text available
Text: Datasheet R8C/34W Group, R8C/34X Group, R8C/34Y Group, R8C/34Z Group RENESAS MCU 1. R01DS0012EJ0100 Rev.1.00 Nov 24, 2010 Overview 1.1 Features The R8C/34W Group, R8C/34X Group, R8C/34Y Group, and R8C/34Z Group of single-chip MCUs incorporate the R8C CPU core, employing sophisticated instructions for a high level of efficiency. With 1 Mbyte of address
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R8C/34W
R8C/34X
R8C/34Y
R8C/34Z
R01DS0012EJ0100
ti9044
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Untitled
Abstract: No abstract text available
Text: Datasheet R8C/3NT Group RENESAS MCU 1. R01DS0047EJ0100 Rev.1.00 Jan 25, 2011 Overview 1.1 Features The R8C/3NT Group of single-chip MCUs incorporates the R8C CPU core, employing sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, and it is capable of executing instructions at high
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R01DS0047EJ0100
al9044
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Untitled
Abstract: No abstract text available
Text: R8C/33T Group RENESAS MCU 1. R01DS0046EJ0110 Rev.1.10 Apr 26, 2011 Overview 1.1 Features The R8C/33T Group of single-chip MCUs incorporates the R8C CPU core, employing sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, and it is capable of executing instructions at high
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R8C/33T
R01DS0046EJ0110
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Untitled
Abstract: No abstract text available
Text: Datasheet R8C/34U Group, R8C/34K Group RENESAS MCU 1. R01DS0113EJ0110 Rev.1.10 Jun 15, 2011 Overview 1.1 Features The R8C/34U Group, R8C/34K Group of single-chip MCUs incorporates the R8C CPU core, employing sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, and it is capable of
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R8C/34U
R8C/34K
R01DS0113EJ0110
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: Datasheet R8C/3MU Group, R8C/3MK Group RENESAS MCU 1. R01DS0112EJ0110 Rev.1.10 Jun 15, 2011 Overview 1.1 Features The R8C/3MU Group, R8C/3MK Group of single-chip MCUs incorporates the R8C CPU core, employing sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, and it is capable of
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R01DS0112EJ0110
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Untitled
Abstract: No abstract text available
Text: Datasheet R8C/3JT Group RENESAS MCU 1. R01DS0045EJ0100 Rev.1.00 Apr 26, 2011 Overview 1.1 Features The R8C/3JT Group of single-chip MCUs incorporates the R8C CPU core, employing sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, and it is capable of executing instructions at high
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R01DS0045EJ0100
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017BH
Abstract: No abstract text available
Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. R8C/33A Group REJ03B0228-0001 Rev.0.01 Oct 26, 2007 RENESAS MCU 1. Overview 1.1 Features The R8C/33A Group of single-chip MCUs incorporates the R8C/Tiny Series CPU core, employing sophisticated
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R8C/33A
REJ03B0228-0001
017BH
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rtm870t
Abstract: RTM870T-690 9LPR462 rtm870 SRN22J-4-GP ICS9LPR462 foxconn rs690mc Socket AM2 GPIO57
Text: 5 4 3 2 1 Yukon Block Diagram AMD 8,9 DDR2 SODIMM DIMM2 K8 Rev.G AM2 Socket DDR II 533/667/800 8,9 HyperTransport 16x16 32 4,5, 6,7 L1: Signal 1 L2: VCC L3: Inner Signal 2 L4: Inner Signal 3 L5: GND L6: Signal 4 Project code: 91.4BC01.001 PCB P/N : 48.4BC01.001
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16x16
4BC01
9LPR462
RTM870T-690)
318MHz
11a/b/g/n
Marvell8040
25MHz
RS690MC
rtm870t
RTM870T-690
9LPR462
rtm870
SRN22J-4-GP
ICS9LPR462
foxconn
rs690mc
Socket AM2
GPIO57
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g792
Abstract: CP2211F G7922 NIPPON CHEMICON ASF CPUTEST25L ATI-RS690M wistron MARVELL G77 WPC8768LDG c70021
Text: 5 4 3 2 1 Orta Block Diagram AMD 8,9 DDR2 SODIMM DIMM2 8,9 Power Switch P2231NFC1 28 HyperTransport New card 28 RJ45 C 24 24 INPUT OUTPUT DCBATOUT CRT13 VCC_CORE_S0 SYSTEM DC/DC LCD14 INPUT OUTPUT DCBATOUT PCI-E x 1 1D2V_S0 1D8V_S3 SYSTEM DC/DC INPUT PCI-E x 4
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16x16
4U101
06245-SB
P2231NFC1
9LPRS502
RTM875T-605)
318MHz
11a/b/g/n
BCM5787M
g792
CP2211F
G7922
NIPPON CHEMICON ASF
CPUTEST25L
ATI-RS690M
wistron
MARVELL G77
WPC8768LDG
c70021
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2C5339
Abstract: 2C6193
Text: P P C PRODUCTS CORP 55E D • tflJS b m DDODÔTD T ■ j 5-A NPN Power Transistor Chips 2C5339 'T 'Z 'b - o S FEATURES I CHIP TYPE: AL • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector ■Gold - 3,000 A Nominal
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2C5339
2C6193
350/is,
2C5339
2C6193
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2c53
Abstract: NL7235 corotron
Text: <f - NATIONAL NL7235 TRIODE The National NL7235 is a miniature triode designed for use with plate voltages as high as 10 KV. It can be used as a substitute for the 2C53 with a subsequent saving in chassis space. The high Mu and Sm of the NL7235 recommends its use as
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NL7235
2c53
corotron
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transistor 42t
Abstract: 2C5339 2C6193 chip die npn transistor
Text: 5-A PNP Power Transistor Chips 2C6193 FEATURES CHIP TYPE: AL • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 10 Mils Nominal • Complement to NPN 2C5339
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2C6193
2C5339
350fcS,
transistor 42t
2C5339
2C6193
chip die npn transistor
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2N5345
Abstract: MJ4647 2n5344 SILICON DICE motorola transistor motorola 2C5345 mj4646
Text: MOTOROLA 3M SC -CDIODES/OPTOJ 6367255 MOTOROLA SC » F lt.3 t.7 S S S D IO D E S /O P T O 34C 0037=135 37935 6 D „q j SILICON POWER TRANSISTOR DICE (continued) 2C5345 DIE NO. LINE SOURCE — PL500.77 This die provides performance equal to or better than that of
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PL500
2C5345
2N5344
2N5345
MJ4645
MJ4646
MJ4647
MJ4648
SILICON DICE motorola
transistor motorola
2C5345
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2C5339
Abstract: 2C6193
Text: P P C PRODUCTS CORP SSE D ta jb lll OOOOÖ'iD T • ! 5-A NPN Power Transistor Chips 2C5339 • T -lV O S t CHIP TYPE: AL FEATURES • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector ■ Gold - 3,000 A Nominal
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2C5339
2C6193
350ms,
2C6193
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2c5339
Abstract: transistor 2sc 1014 2C5339HV 2C6193
Text: 4bE D • b3b7254 00^2^73 2 ■ M O T b T - ^ “0 5 MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA kAä DM0 2C5339HV Chip NPN Silicon Medium-Power Transistor mini Discrete Military Operation . . .(or use in switching and wide-band amplifier applications
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b3b72S4
2C5339HV
2C6193
2c5339
transistor 2sc 1014
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2C4300
Abstract: 2C5333 chip die npn transistor
Text: P P C PRODUCTS CORP bDE D • b flS b m □DOO'ìba 1GG W PPC PNP Power Transistor Chips 2C5333 FEATURES CHIP TYPE: AP • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 30,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 10 Mils Nominal
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2C5333
2C4300
2C5333
2C4300
chip die npn transistor
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2NC5339
Abstract: 2N5349 2N6187 2n4877 2N6191 2N534B 2N5346 2n5430 2N6186 2nc53
Text: MOTOROLA SC O I O D E S / O P T O } S367255 MOTOROLA 34 SC D I O D E S ]>F| L,3L,7S55 □ Q B 7 ti34 t. | ~ /O P TO 34C 37934 SILICON POWER TRANSISTOR DICE (continued) 2C5339 DIE NO. — NPN LINE SOURCE — PL500.68 NPN D r - 3 3 ^ '/ 2C6193 / DIE NO.
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S367255
PL500
2C5339
2C6193
2N4877
2N5336
2N5337
2N5338
2NS339
2NC5339
2N5349
2N6187
2N6191
2N534B
2N5346
2n5430
2N6186
2nc53
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ST-M40
Abstract: No abstract text available
Text: PH AST-12 Device Programmable, High-Performance ATM/Packet/Transmission SONET/SDH Terminator for Level 12 TXC-06112 DATA SHEET PRELIMINARY DESCRIPTION Integrated clock recovery and synthesis fo r four O C -3c/STM -1 sig n a ls or one O C -1 2 /O C -1 2 c/
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AST-12
TXC-06112
-12/S
800-521-CORE
TXC-06112-MB
ST-M40
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RCA 619
Abstract: BUX39 RCA Solid State Power Transistor
Text: G E SOLI» STATE 3875081 G E SOLID STATE •üï DE”!3fl7S0fll □D17t.l3 ^ | ~ 01E 1761 3 33 3 Pro Electron Power Transistors _ _ BUX39 File Num ber 1211 High-Current, High-Speed, High-Power
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BUX39
42CS-32219
D17bis
r-33-rs
BUX39
92CS-ISS32M
RCA 619
RCA Solid State Power Transistor
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