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    2SK356 Price and Stock

    Toshiba America Electronic Components 2SK3566(STA4,Q,M)

    MOSFET N-CH 900V 2.5A TO220SIS
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    DigiKey 2SK3566(STA4,Q,M) Tube 441 1
    • 1 $2.14
    • 10 $2.14
    • 100 $2.14
    • 1000 $0.68328
    • 10000 $0.6025
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    Mouser Electronics 2SK3566(STA4,Q,M) 635
    • 1 $1.88
    • 10 $1.67
    • 100 $0.878
    • 1000 $0.615
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    TME 2SK3566(STA4,Q,M) 271 1
    • 1 $1.15
    • 10 $0.93
    • 100 $0.83
    • 1000 $0.77
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    Chip One Stop 2SK3566(STA4,Q,M) Tube 675
    • 1 -
    • 10 $1.39
    • 100 $0.799
    • 1000 $0.757
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    EBV Elektronik 2SK3566(STA4,Q,M) 200 19 Weeks 50
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    Toshiba America Electronic Components 2SK3564(STA4,Q,M)

    MOSFET N-CH 900V 3A TO220SIS
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    DigiKey 2SK3564(STA4,Q,M) Tube 74 1
    • 1 $2.1
    • 10 $2.1
    • 100 $2.1
    • 1000 $0.66534
    • 10000 $0.58375
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    Mouser Electronics 2SK3564(STA4,Q,M) 257
    • 1 $1.64
    • 10 $1.62
    • 100 $0.808
    • 1000 $0.583
    • 10000 $0.583
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    TME 2SK3564(STA4,Q,M) 101 1
    • 1 $1.16
    • 10 $0.93
    • 100 $0.83
    • 1000 $0.83
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    EBV Elektronik 2SK3564(STA4,Q,M) 19 Weeks 50
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    Toshiba America Electronic Components 2SK3565(Q,M)

    MOSFET N-CH 900V 5A TO220SIS
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    Toshiba America Electronic Components 2SK3564(STA4QM)

    Power MOSFET, N Channel, 900 V, 3 A, 4.3 Ohm, SC-67, 3 Pins, Through Hole - Rail/Tube (Alt: 2SK3564(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SK3564(STA4QM) Tube 11,797 32 Weeks 1
    • 1 $0.54943
    • 10 $0.54172
    • 100 $0.5186
    • 1000 $0.5186
    • 10000 $0.5186
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    Toshiba America Electronic Components 2SK3565(Q

    Trans MOSFET N-CH 900V 5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: 2SK3565(Q,M))
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    Find more 2SK356 price and stock on Findchips.com

    2SK356 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK356 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK356 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK356 Unknown FET Data Book Scan PDF
    2SK356 Toshiba Silicon N-Channel MOS Type Transistor Scan PDF
    2SK3560 Kexin N-Channel Power MOSFET Original PDF
    2SK3560 Panasonic Silicon N-channel power MOSFET For PDP/For high-speed switching Original PDF
    2SK3561 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3561 Toshiba Switching Regulator Applications Original PDF
    2SK356/1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3562 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3562 Toshiba Original PDF
    2SK356/2 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3562STA4QT Toshiba 2SK3562STA4QT - Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220NIS Original PDF
    2SK3563 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3563 Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS) Original PDF
    2SK356/3 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3564 Toshiba FETs - Nch 700V Original PDF
    2SK3564 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3564(STA4,Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3A TO-220SIS Original PDF
    2SK3565 Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS) Original PDF

    2SK356 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k3564

    Abstract: transistor K3564 K356 2SK35
    Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)


    Original     		2SK3564 k3564 transistor K3564 K356 2SK35 PDF

    k3561

    Abstract: 2SK3561 K356
    Text: 2SK3561 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3561 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 6.5 S (標準)


    Original     		2SK3561 SC-67 2-10U1B k3561 2SK3561 K356 PDF

    K3565

    Abstract: 2SK3565 K3565 data
    Text: 2SK3565 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3565 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)


    Original     		2SK3565 SC-67 2-10U1B K3565 2SK3565 K3565 data PDF

    k3563

    Abstract: 2sK3563 2sK3563 datasheet
    Text: 2SK3563 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3563 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.5 S (標準)


    Original     		2SK3563 SC-67 2-10U1B k3563 2sK3563 2sK3563 datasheet PDF

    transistor k3568

    Abstract: k3568 2SK3568 K3568 equivalent k3568 transistor 2SK3568 equivalent K356 2sk3568 datasheet
    Text: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 transistor k3568 k3568 2SK3568 K3568 equivalent k3568 transistor 2SK3568 equivalent K356 2sk3568 datasheet PDF

    2sk3562

    Abstract: k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562
    Text: 2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		2SK3562 2sk3562 k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562 PDF

    2sk3569

    Abstract: transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data transistor 2SK3569 k3569 transistor
    Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		2SK3569 2sk3569 transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data transistor 2SK3569 k3569 transistor PDF

    k3562

    Abstract: 2SK3562 K3562 2SK3562 2sk3562 equivalent
    Text: 2SK3562 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3562 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.9 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.0 S (標準)


    Original     		2SK3562 SC-67 2-10U1B 12h-c) k3562 2SK3562 K3562 2SK3562 2sk3562 equivalent PDF

    K3561

    Abstract: transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356
    Text: TENTATIVE 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ 2SK3561 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


    Original     		2SK3561 K3561 transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356 PDF

    transistor K3564

    Abstract: No abstract text available
    Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3564 transistor K3564 PDF

    k3569

    Abstract: 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application
    Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 k3569 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application PDF

    K3561

    Abstract: transistor k3561 k3561 transistor k3561 transistor application 2sk3561
    Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3561 K3561 transistor k3561 k3561 transistor k3561 transistor application 2sk3561 PDF

    K3565 transistor

    Abstract: transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565
    Text: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3565 K3565 transistor transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565 PDF

    transistor K3564

    Abstract: K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564
    Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3564 transistor K3564 K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564 PDF

    K3568

    Abstract: transistor k3568 2SK3568 K3568 equivalent
    Text: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 K3568 transistor k3568 2SK3568 K3568 equivalent PDF

    K3566 transistor

    Abstract: No abstract text available
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		2SK3566 K3566 transistor PDF

    k3566

    Abstract: K3566 transistor K3566 data sheet 2SK3566 2SK3566 equivalent equivalent k3566 transistor k3566 K3566 equivalent k356 MARKING toshiba 133
    Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3566 k3566 K3566 transistor K3566 data sheet 2SK3566 2SK3566 equivalent equivalent k3566 transistor k3566 K3566 equivalent k356 MARKING toshiba 133 PDF

    transistor K3565

    Abstract: K3565 transistor k3565 K356 K3565 data 2SK3565 datasheet 2SK3565 equivalent 2SK3565 12160TC
    Text: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3565 transistor K3565 K3565 transistor k3565 K356 K3565 data 2SK3565 datasheet 2SK3565 equivalent 2SK3565 12160TC PDF

    transistor compatible k3569

    Abstract: K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569
    Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		2SK3569 transistor compatible k3569 K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569 PDF

    k3562

    Abstract: k3562 transistor transistor k3562 2SK3562 2sk3562 equivalent 2SK3562 K3562 transistor compatible k3562 equivalent 2sk3562 toshiba k3562 k3562 voltage
    Text: 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3562 k3562 k3562 transistor transistor k3562 2SK3562 2sk3562 equivalent 2SK3562 K3562 transistor compatible k3562 equivalent 2sk3562 toshiba k3562 k3562 voltage PDF

    k3564

    Abstract: transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a
    Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3564 k3564 transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a PDF

    transistor k3569

    Abstract: K3569 2SK3569 k3569 Silicon N Channel MOS Type k3569 transistor transistor 2SK3569 K356
    Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 transistor k3569 K3569 2SK3569 k3569 Silicon N Channel MOS Type k3569 transistor transistor 2SK3569 K356 PDF

    2sk3568

    Abstract: transistor k3568 K3568 K3568 equivalent 2SK3568 equivalent k3568 transistor K3568 data K3568 DATASHEET k356 Field Effect Transistor Silicon N Channel MOS Typ
    Text: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 2sk3568 transistor k3568 K3568 K3568 equivalent 2SK3568 equivalent k3568 transistor K3568 data K3568 DATASHEET k356 Field Effect Transistor Silicon N Channel MOS Typ PDF

    K356

    Abstract: gti TRANSISTOR 2SK356
    Text: TOSHIBA {DI S CR ET E/ OPT O} Ti 9097250 TOSHIBA DISCRETE/OPTO tfoììuht dF | ^7250 99D 16650 SEMICONDUCTOR DDlbbSG b D 3 \ TOSHIBA FIELD EFFECT TRANSISTOR 2SK356 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.


    OCR Scan     		2SK356 K356 gti TRANSISTOR 2SK356 PDF