Untitled
Abstract: No abstract text available
Text: Ordering number:EN3830 N-Channel Silicon MOSFET 2SK1735 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm
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EN3830
2SK1735
2SK1735]
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2SK1735
Abstract: No abstract text available
Text: Ordering number:EN3830 N-Channel Silicon MOSFET 2SK1735 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm
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EN3830
2SK1735
2SK1735]
2SK1735
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2sc5203
Abstract: 2SK3615 2sk*3615 2SK1731 TIG022TS 2SJ633 2SJ646 2SK3492 2SJ636 MCH6005
Text: Ordering number : E I 0 0 2 3 Announcement Regarding Discontinuation and Limited Availability to Existing Customers of Hyper Device Products Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis.
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CPH6405
CPH6434
TIG008SS
TIG014SS
TIG002SS
TIG008TS
TIG022TS
TIG004SS
2sc5203
2SK3615
2sk*3615
2SK1731
TIG022TS
2SJ633
2SJ646
2SK3492
2SJ636
MCH6005
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2SK1735
Abstract: No abstract text available
Text: Ordering num ber:EN3830 _ 2SK1735 No.3830 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. ■Its height onboard is 9.5mm. • Meets radial taping.
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EN3830
2SK1735
\00vAtVficers
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A8-7975
Abstract: No abstract text available
Text: 2SK1735 LD L o w D riv e S e rie s V Dss = 6 0 V 2085 N Channel Power MOSFET E 3830 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. •M eets radial taping. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C
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2SK1735
12693TH
A8-7975
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2SJ26
Abstract: No abstract text available
Text: VDSS = 60V, P-channel Absolute maximum ratings at Ta = 25°C Type No. Package VDSS W 2SJ285 Voss V CP 2SJ190 •o (A) Po' W 0.25 0.25* ^GS(off) min to max (V) 1.0 PCP ^DS (on) RoS(on) typ/maxat Vß$-4V (ii) typ/maxat VGS = 10V 3.0/4.0 2.2/3.0 0.35 45 1.2/1.6
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2SJ285
2SJ190
2SJ288
2SJ191
2SJ192
2SJ362
2SJ414
O-220
O-220ML
2SJ26
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J289
Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Text: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications
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Sma11-sized
2SK1839<
2SK536
2SK1840UJ)
3SK248CNJ)
2SK669
2SK1841
2SK583
Characteristics/Ta-25X;
12/55m
J289
3SK266
2SK1728
3sk251
DS-17 SANYO
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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2SK243-2
Abstract: 2SK2432 2sk1470
Text: • LD Series Lineup VDSS = 60V, N-channel Absolute maximum ratings atTa = 25°C Type No. Package VfiSS VG8S *D A 2SK1470 CP 0.4 2.0 PCP +15 TP 2SK1472 2SK2432 ZP 0.9/1.2 0.4 45 0.45/0.6 0.35/0.45 2.0 150 1.2/1.6 0.9/1.2 1.0 45 30 0.08/0.11 0.06/0.08 8.0
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2SK1846
2SK1470
2SK1726
2SK1471
2SK1472
2SK2432
2SK1898
2SK1899
2SK1900
2SK21G4
2SK243-2
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2SK1731
Abstract: 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2SK2153 2sk2406 2SK1474 2SK1920
Text: Continued from previous page Absolute maximum ratings Applications M VGSS Id V (A) (W) VDSS Electrical characteristics (Ta • 25 C ) RDSCmO @ ID PD Teh (1C) VGSS (off) (V) ID ■V6S ves (V) & |Yfs| 0 VDS ' ID slif Type Mo. Package type (A) 2SK1474 TP Ultrahigh-speed switching
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2SK1474
2SK1475
2SK1920
2SK2046
2SK2153
2SK2619V
2SK2626V
2SK2634V
2SK2164
2SK2321
2SK1731
2SK2637
2SK1871
2SK2626
2sk2636
2SK2438
2sk2406
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Untitled
Abstract: No abstract text available
Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch
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2SJ284*
2SJ286*
2SK1847
2SJ285*
2SJ233
2SK1731
2SK1732
2SK1734
2SK1735
DD14SSD
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J289
Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Text: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications
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3SK265
3SK266
3SK248
12/55m
2/80m
45/-/50m
130m/65m
21/90m
MT931224TR
J289
K2171
2sj281
2SK1847
2SK1470 KD
K1470
2sk669
K1311
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13FLP
Abstract: sj22 serie 2sk
Text: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6
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T0220M
2SK1728
2SK1738
2SK1474
2SK1475
2SK1412
2SK1414
-220FI
2SK1455
23K1456
13FLP
sj22
serie 2sk
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2sk1760
Abstract: 2SK1767 2SK1745 2SK1758 2SK1736 2SK1747 2SK1733 2SK1734 2SK1735 2SK1737
Text: - 120 - f m % it £ ffl m m Ä % K 2SK1733 * £ V E # * (V) ft * 8 fé I* it IE P d/ P ch ft (A) 1* (max) (A) <W> & 1± (Ta=25<C ) Ig ss Vg s (V) (min) (max) V d s (A) (V) (A) (min) (max) V d s (V) (V) (V) (min) (S) ÏD (A) Vd s (V) Id (A) HS SW MOS N E
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2SK1733
2SK1734
2SK1735
2SK1736
2SK1737
105nstyp
2SK1760
144nstyp
2SK1761
tofM44nstyp
2sk1760
2SK1767
2SK1745
2SK1758
2SK1747
2SK1733
2SK1734
2SK1735
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