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    2SK1304 Search Results

    2SK1304 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK1304 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1304 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1304 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1304 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1304 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1304 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1304 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1304 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1304 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1304 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1304 Unknown FET Data Book Scan PDF
    2SK1304-E Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK1304 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1304

    Abstract: DSA003638 RA1010
    Text: 2SK1304 Silicon N-Channel MOS FET ADE-208-1262 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SK1304 ADE-208-1262 2SK1304 DSA003638 RA1010

    2SK1304

    Abstract: Hitachi DSA00389
    Text: 2SK1304 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


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    PDF 2SK1304 2SK1304 Hitachi DSA00389

    Untitled

    Abstract: No abstract text available
    Text: 2SK1304 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


    Original
    PDF 2SK1304

    Hitachi DSA002713

    Abstract: No abstract text available
    Text: 2SK1304 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SK1304 Hitachi DSA002713

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK1304 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SK1304 55ica, D-85622 Hitachi DSA002780

    2SK1304

    Abstract: 2SK1304-E PRSS0004ZE-A SC-65
    Text: 2SK1304 Silicon N Channel MOS FET REJ03G0923-0200 Previous: ADE-208-1262 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source


    Original
    PDF 2SK1304 REJ03G0923-0200 ADE-208-1262) PRSS0004ZE-A 2SK1304 2SK1304-E PRSS0004ZE-A SC-65

    2SK1304

    Abstract: 2SK130
    Text: 2SK1304 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


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    PDF 2SK1304 2SK1304 2SK130

    2SK1304

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


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    PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    Untitled

    Abstract: No abstract text available
    Text: MIC2587/MIC2587R Single-Channel, Positive High-Voltage Hot Swap Controller Revision 2.0 General Description Features The MIC2587 and MIC2587R are single-channel positive voltage hot swap controllers designed to provide safe insertion and removal of boards for systems that require


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    PDF MIC2587/MIC2587R MIC2587 MIC2587R

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


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    PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original
    PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    Untitled

    Abstract: No abstract text available
    Text: 2SK1304 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


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    PDF 2SK1304

    k1304

    Abstract: No abstract text available
    Text: 2SK1304 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • 4 V gate drive device — C an be driven from 5 V source • Suitable for m otor drive, D C -D C converter, pow er sw itch and solenoid drive


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    PDF 2SK1304 k1304

    2SJ235

    Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet

    2SK1326

    Abstract: 2sk1321 2SK1323 1A 30V MOS 2SK1325 2SK1327 K1308 2SK1319 2SK1311 2SK1301
    Text: - 96 - € tt ffl £ j£ m "Æ i f m 1 m \> m, P d/P c h m K fe V* V) * ft * (V) * (A) * (w> Ig s s (max) (A) Vg s (V) % W (Ta=25°C) tï ft (min) (max) V d s (V) (V) (V) (min) (max) V d s (A) (A) (V) gm (min) (typ) V d s (S) (S) (V) Id (A) Id (A) 2SK1301


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    PDF 2SK1301 2SK1302 2SK1303 2SK1304 2SK1305 DSS323S 75nstyp 267/S: 2SK1324, 1324S 2SK1326 2sk1321 2SK1323 1A 30V MOS 2SK1325 2SK1327 K1308 2SK1319 2SK1311

    2sk1299

    Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sk1299 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740

    ac Inverter schematics 10 kw

    Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
    Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


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    PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E ac Inverter schematics 10 kw 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C

    2SK1778

    Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


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    PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094

    2SK44

    Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
    Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ182 2SJ214 2SK513 2SJ235

    2SK1778

    Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
    Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m


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    PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2SK1778 2SJ177 2SJ295 PF0042

    2SK1778

    Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


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    PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972

    2SK2829

    Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
    Text: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586


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    PDF 2SK2912 2SK2938 2SK2939 2SK2940 2SK2957 2SK2958 2SJ21S 2SJ217 28K1161 2SK1162 2SK2829 Spl 740 2sk1 2SK2728 28K13 2SK151

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


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    PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212