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Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.75 max. • High-speed switching • Allowing to supply with the radial taping 15.6±0.5 • Features (0.8) (0.8) 3.0±0.2
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2SK0655
2SK655)
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MA408
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 M Di ain sc te on na tin nc ue e/ d • High-speed switching • Allowing to supply with the radial taping
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2SK0655
2SK655)
MA408
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2SK0655
Abstract: 2SK655
Text: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 ue pl d in an c se ed lud pl vi an m m es si
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2SK0655
2SK655)
2SK0655
2SK655
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2SK0655
Abstract: 2SK655
Text: Silicon MOS FETs Small Signal 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm For switching 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 0.45+0.20 –0.10 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage
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2SK0655
2SK655)
2SK0655
2SK655
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2SK0655
Abstract: 2SK655 SC-72
Text: Silicon MOS FETs Small Signal 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm 4.0±0.2 3.0±0.2 For switching • Features Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature
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2SK0655
2SK655)
SC-72
2SK0655
2SK655
SC-72
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2SK0655
Abstract: 2SK655
Text: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 • High-speed switching • Allowing to supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C
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2SK0655
2SK655)
2SK0655
2SK655
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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SSSMini3-F1 transistor
Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Text: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)
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2SK0601
2SK614)
2SK664)
2SK665)
2SK1228
2SK1374
2SK3539
2SK3546J
2SK3547
2SK2211
SSSMini3-F1 transistor
2SK0664
2sk60
2SK0601
2SK0614
2SK0615
2SK0655
2SK0656
2SK601
2SK614
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