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    2SK36 Search Results

    2SK36 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3664-T1-A Renesas Electronics Corporation Nch Single Power Mosfet 20V 0.5A 570Mohm Usm/Sc-75 Visit Renesas Electronics Corporation
    2SK3634-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3, /Bag Visit Renesas Electronics Corporation
    2SK3642-ZK-E1-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3653-T1-A Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3659-AZ Renesas Electronics Corporation Switching N Channel MOSFET, MP-45F, /Bag Visit Renesas Electronics Corporation
    2SK3634-Z-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
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    2SK36 Price and Stock

    Rochester Electronics LLC 2SK3666-2-TB-E

    JFET N-CH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3666-2-TB-E Bulk 481,059 4,558
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    Rochester Electronics LLC 2SK3615-TL-E

    N-CHANNEL SILICON MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3615-TL-E Bulk 152,600 410
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    Rochester Electronics LLC 2SK3618-TL-E

    MOSFET N-CH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3618-TL-E Bulk 35,700 452
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    Rochester Electronics LLC 2SK3614-Q-TD-E

    NCH 4V DRIVE SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3614-Q-TD-E Bulk 32,680 1,567
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    Rochester Electronics LLC 2SK3668-ZK-E1-AY

    POWER FIELD-EFFECT TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3668-ZK-E1-AY Bulk 20,800 88
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    Find more 2SK36 price and stock on Findchips.com

    2SK36 Datasheets (263)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK36 Unknown FET Data Book Scan PDF
    2SK360 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK360 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK360 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK360 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK360 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK360 Unknown FET Data Book Scan PDF
    2SK3600-01L Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3600-01S Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3600-01SJ Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3601-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3601-01 Fuji Electric SMD, Power Amplifier, 100V 20A 50W, MOS-FET N-Channel enhanced Original PDF
    2SK3602-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3603-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3604-01L Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3604-01S Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3604-01SJ Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3605-01 Fuji Electric SMD, Power Amplifier, 150V 16A 50W, MOS-FET N-Channel enhanced Original PDF
    2SK3605-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3606-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    ...

    2SK36 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK36

    Abstract: No abstract text available
    Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		PDF 2SK369 2SK36

    2SK3637

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3637 1 .2 7 -0+ 0.1.1 TO-263 Features Low on-resistance, low Qg Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1


    Original     		PDF 2SK3637 O-263 2SK3637

    ciss

    Abstract: 2SK3635
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3635 TO-252 Features High voltage: VDSS = 200 V Gate voltage rating: +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 30 V Low Ciss: Ciss = 390 pF TYP. Built-in gate protection diode


    Original     		PDF 2SK3635 O-252 ciss 2SK3635

    2SK3636

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3636 TO-263 Avalanche energy capacity guaranteed: EAS 20 mJ +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 No secondary breakdown +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2


    Original     		PDF 2SK3636 O-263 2SK3636

    930 18a diode smd

    Abstract: 930 18a 2SK3641 930 diode smd
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3641 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 930 pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 15 A


    Original     		PDF 2SK3641 O-252 930 18a diode smd 930 18a 2SK3641 930 diode smd

    2SK3658

    Abstract: No abstract text available
    Text: 2SK3658 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3658 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK3658 2SK3658

    Untitled

    Abstract: No abstract text available
    Text: 2SK3633 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3633 ○ スイッチングレギュレータDC−DC コンバータ ○ モータドライブ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。


    Original     		PDF 2SK3633

    K3667

    Abstract: toshiba k3667 2SK3667 transistor compatible k3667
    Text: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3667 K3667 toshiba k3667 2SK3667 transistor compatible k3667

    K3662

    Abstract: 2SK3662
    Text: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)


    Original     		PDF 2SK3662 K3662 2SK3662

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3643 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 2400pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 32 A


    Original     		PDF 2SK3643 O-252 2400pF

    K3669

    Abstract: 2SK3669
    Text: 2SK3669 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSVII 2SK3669 ○ スイッチングレギュレータ用 ○ スイッチングアンプ用 ○ モータドライブ用 順方向伝達アドミタンスが高い。 : |Yfs| = 6 S (標準)


    Original     		PDF 2SK3669 K3669 2SK3669

    K3670

    Abstract: TRANSISTOR K3670 2SK3670
    Text: 2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3670 Chopper Regulator and DC−DC Converter Applications Unit: mm z 2.5V-Gate Drive z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.1 S (typ.)


    Original     		PDF 2SK3670 K3670 TRANSISTOR K3670 2SK3670

    diode FR 105

    Abstract: 2SK3613-01
    Text: 2SK3613-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings Drawings mm (mm) 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof


    Original     		PDF 2SK3613-01 voltage50 diode FR 105 2SK3613-01

    2SK3654

    Abstract: 2SK365
    Text: 2SK365 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK365 2SK3654 2SK365

    2sk3672

    Abstract: 2SK3673 toshiba audio power amplifier 2SK367
    Text: 2SK367 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications • Unit: mm High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)


    Original     		PDF 2SK367 2sk3672 2SK3673 toshiba audio power amplifier 2SK367

    2SK364

    Abstract: TOSHIBA 2SK364 2SJ104 Toshiba 2SJ
    Text: 2SK364 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK364 2SJ104 SC-43 2SK364 TOSHIBA 2SK364 2SJ104 Toshiba 2SJ

    125MH

    Abstract: No abstract text available
    Text: 2SK3685-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3685-01 125MH

    Untitled

    Abstract: No abstract text available
    Text: 2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3676-01L

    2SK3638

    Abstract: 2SK3638-ZK
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE


    Original     		PDF 2SK3638 2SK3638 2SK3638-ZK O-252 O-252) 2SK3638-ZK

    Untitled

    Abstract: No abstract text available
    Text: 2SK3651-01R [0311] FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-3PF High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		PDF 2SK3651-01R

    2sk3699

    Abstract: 2sk3699-01mr
    Text: 2SK3699-01MR FUJI POWER MOSFET 200305 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		PDF 2SK3699-01MR O-220F 2sk3699 2sk3699-01mr

    2sk3679

    Abstract: mosfet 2sk3679 2SK3679-01MR 2SK3679 equivalent MOSFET 2sk3679 Data sheet 2SK3679-01 2SK3679-01MR equivalent
    Text: 2SK3679-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		PDF 2SK3679-01MR O-220F mJ300 2sk3679 mosfet 2sk3679 2SK3679-01MR 2SK3679 equivalent MOSFET 2sk3679 Data sheet 2SK3679-01 2SK3679-01MR equivalent

    Untitled

    Abstract: No abstract text available
    Text: 2SK3690-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3690-01 O-220AB

    Sj 88 diode

    Abstract: 2SK3612 Diode SJ 14
    Text: 2SK3612-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		PDF 2SK3612-01L O-220AB Sj 88 diode 2SK3612 Diode SJ 14