2SB1020
Abstract: 2SD1415
Text: JMnic Product Specification 2SB1020 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1415 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications
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2SB1020
O-220Fa
2SD1415
O-220Fa)
-14mA
-100V;
2SB1020
2SD1415
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2SD1415
Abstract: 2SB1020 3A 100V npn LOW SATURATION VOLTAGE
Text: Inchange Semiconductor Product Specification 2SD1415 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1020 ·DARLINGTON APPLICATIONS ·High power switching applications
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2SD1415
O-220Fa
2SB1020
O-220Fa)
2SD1415
2SB1020
3A 100V npn LOW SATURATION VOLTAGE
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D1415A
Abstract: 2SD1415A d1415
Text: 2SD1415A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1415A ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 3 V, IC = 3 A)
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2SD1415A
2-10R1A
20070701-JA
D1415A
2SD1415A
d1415
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D1415A
Abstract: transistor D1415A 2SD1415A d1415
Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
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2SD1415A
D1415A
transistor D1415A
2SD1415A
d1415
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2SD1415
Abstract: 2SB1020 NPN POWER DARLINGTON TRANSISTORS
Text: SavantIC Semiconductor Product Specification 2SD1415 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1020 ·DARLINGTON APPLICATIONS ·High power switching applications
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2SD1415
O-220Fa
2SB1020
O-220Fa)
2SD1415
2SB1020
NPN POWER DARLINGTON TRANSISTORS
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2SD1415A
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SD1415A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications
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2SD1415A
O-220F
O-220F)
2SD1415A
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2SB1020
Abstract: 2SD1415 2sd1415 transistor transistor 2sb1020
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION •High DC C urrent Gain: hFE= 2000 Min. @IC= -3A ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1415
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2SD1415
-14mA
-100V;
2SB1020
2SD1415
2sd1415 transistor
transistor 2sb1020
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D1415A
Abstract: 2SD1415A
Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
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2SD1415A
D1415A
2SD1415A
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D1415A
Abstract: transistor D1415A d1415 2SD1415A
Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
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2SD1415A
D1415A
transistor D1415A
d1415
2SD1415A
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transistor D1415A
Abstract: No abstract text available
Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
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2SD1415A
transistor D1415A
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2SD1415A
Abstract: 2SD1415 DARLINGTON 3A 100V npn
Text: Inchange Semiconductor Product Specification 2SD1415A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications
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2SD1415A
O-220F
O-220F)
VCC45V
2SD1415A
2SD1415
DARLINGTON 3A 100V npn
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2SB1020
Abstract: 2SD1415
Text: Inchange Semiconductor Product Specification 2SB1020 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1415 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications
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2SB1020
O-220Fa
2SD1415
O-220Fa)
-100V;
2SB1020
2SD1415
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transistor D1415A
Abstract: D1415A
Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
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2SD1415A
2-10R1A
transistor D1415A
D1415A
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2SB1020
Abstract: 2SD1415
Text: SavantIC Semiconductor Product Specification 2SB1020 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1415 APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications
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2SB1020
O-220Fa
2SD1415
O-220Fa)
-14mA
-100V;
2SB1020
2SD1415
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2SD1415A
Abstract: 100L
Text: T O S H IB A 2SD1415A 2 S D 1 4 1 5A TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D AR LIN G TO N Unit in mm HIGH POWER SW ITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TO R DRIVE APPLICATIONS • ±0.2 -*03.2 •- 10 ±0.3 . - -I
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2SD1415A
2SD1415A
100L
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2SD1415A
Abstract: No abstract text available
Text: TO SH IBA 2SD1415A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 1 4 1 5A HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 . 0 3 . 2 ± 0.2 2 .7 ± Q . 2 IP • High DC Current Gain
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2SD1415A
2SD1415A
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2SD1415A
Abstract: No abstract text available
Text: TO SH IBA 2SD1415A 2 S D 1 4 1 5A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 High DC Current Gain : hFE = 2000 (Min.) (VCE = 3 V, IC = 3 A)
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2SD1415A
2SD1415A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD1415A 2 S D 1 4 1 5A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH POWER SWITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 (Min.) (Vq e = 3 V, Iç = 3 A)
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2SD1415A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SD1415A TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D ARLING TO N 3 < ; n i d i R A HIGH POWER SW ITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TO R DRIVE APPLICATIONS • High DC Current Gain : h p E = 2000 (Min.) (VCE = 3V, Ic = 3 A )
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2SD1415A
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2SD1415
Abstract: 310l1
Text: SILICON NPN TRIPLE DIFFUSE TYPE 2SD1415 DARLINGTON POWER INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. SYMBOL RATING UNIT VCBO 100 V Collector-Emitter Voltage vCEO 100 V Emitter-Base Voltage
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2SD1415
2SB1020.
2SD1415
310l1
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2SB1020
Abstract: 2SD1415 IC AH1
Text: V U 3 > P N P = *Ü A Ít M & - 2SB1020 U > h > n (2 S B 1 0 2 0 m o /N>7 - K7-f7, / t A X Ï - ÿ - îü x m h '7 - f 7 : h p ß —2000 (ft/J') (VCE = - 3 V , IC = - 3 A ) . : V cE ísat) = - 1 . 5 V ( t t * ) d c = - 3 A ) 2SD1415 i => > 7" 'J > > 9 ') IZ t¿ 19 t t o
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2SB1020
2SD1415
--14m
2SB1020
IC AH1
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JIS B 0401
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE 2SD1415A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 7 < ;n id i RA Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • . ^ 3.2 ± 0 .2 2_-7±( .2 High DC Current Gain • h ™ = -9nn n iM
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2SD1415A
Temp01
JIS B 0401
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b1375
Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39
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2N3713
2N3714
2N3715
2N3716
2N3789
2N3790
2N3791
2N3792
2N4340
2N4340S
b1375
2sk270a
2SK150A
MG15G1AL2
2SA1051b
MG50G2CL1
mg100g1al2
2SA1015
A1265N
MG100G1AL1
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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