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    2SC6026 Price and Stock

    Toshiba America Electronic Components 2SC6026CT-GR,L3F

    TRANS NPN 50V 0.1A CST3
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    2SC6026CT-GR,L3F Cut Tape 2,900 1
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    2SC6026CT-GR,L3F Digi-Reel 1
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    Toshiba America Electronic Components 2SC6026MFV-Y,L3F

    TRANS NPN 50V 0.15A VESM
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    DigiKey 2SC6026MFV-Y,L3F Cut Tape 15,257 1
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    2SC6026MFV-Y,L3F Reel 8,000 8,000
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    Avnet Americas 2SC6026MFV-Y,L3F Reel 12 Weeks 8,000
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    Mouser Electronics 2SC6026MFV-Y,L3F 7,578
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    TTI 2SC6026MFV-Y,L3F Reel 8,000
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    Toshiba America Electronic Components 2SC6026MFVGR,L3F

    TRANS NPN 50V 0.15A VESM
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    DigiKey 2SC6026MFVGR,L3F Cut Tape 12,612 1
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    2SC6026MFVGR,L3F Reel 8,000 8,000
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    2SC6026MFVGR,L3F Digi-Reel 1
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    Avnet Americas 2SC6026MFVGR,L3F Reel 12 Weeks 8,000
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    Mouser Electronics 2SC6026MFVGR,L3F 2,639
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    Verical 2SC6026MFVGR,L3F 16,000 8,000
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    Arrow Electronics 2SC6026MFVGR,L3F 16,000 12 Weeks 8,000
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    Toshiba America Electronic Components 2SC6026CT-Y(TPL3)

    TRANS NPN 50V 0.1A CST3
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    DigiKey 2SC6026CT-Y(TPL3) Digi-Reel 1
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    2SC6026CT-Y(TPL3) Reel
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    2SC6026CT-Y(TPL3) Cut Tape 1
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    Toshiba America Electronic Components 2SC6026MFV-Y,L3F(B

    2SC6026MFV-Y,L3F(B
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    Verical 2SC6026MFV-Y,L3F(B 24,000 944
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    2SC6026MFV-Y,L3F(B 1,068 944
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    Quest Components 2SC6026MFV-Y,L3F(B 20,054
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    Find more 2SC6026 price and stock on Findchips.com

    2SC6026 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC6026 Toshiba Transistor for Low-Frequency Small-Signal Amplification Original PDF
    2SC6026CT Toshiba Japanese - Transistors Original PDF
    2SC6026CT Toshiba Transistors Original PDF
    2SC6026CT-GR,L3F Toshiba America Electronic Components TRANS NPN 50V 0.1A CST3 Original PDF
    2SC6026CTGRTPL3 Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 100MA FSM Original PDF
    2SC6026CT-Y(TPL3) Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 100MA FSM Original PDF
    2SC6026-GR Toshiba 2SC6026 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC6026MFV Toshiba TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Original PDF
    2SC6026MFV-GR Toshiba 2SC6026 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC6026MFVGR,L3F Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 50V 0.15A VESM Original PDF
    2SC6026MFV-GR(TPL3 Toshiba 2SC6026 - Bipolar Transistors 150mA 50V Original PDF
    2SC6026MFV-Y Toshiba 2SC6026 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC6026MFV-Y,L3F Toshiba America Electronic Components NPN TRANSISTOR VCEO50V IC0.15A H Original PDF
    2SC6026MFV-Y(TPL3) Toshiba 2SC6026 - Bipolar Transistors 150mA 50V Original PDF
    2SC6026-Y Toshiba 2SC6026 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC6026-Y(TPL3) Toshiba 2SC6026 - Bipolar Transistors 100mA 50V Original PDF

    2SC6026 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6026CT Category: Transistors /Bipolar Small-Signal Transistors/General Purpose Transistors Single


    Original     		PDF 2SC6026CT C6026CT 2SA2154CT 2SC6026CT 16-Apr-09

    Untitled

    Abstract: No abstract text available
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV

    2SA21

    Abstract: 2SA2154 2SC6026
    Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026


    Original     		PDF 2SA2154 2SC6026 2SA21 2SA2154 2SC6026

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV

    2SC6026CT

    Abstract: 2SA2154CT
    Text: 2SC6026CT シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6026CT ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm 0.6±0.05 高耐圧です。 • コレクタ電流が大きい。: IC = 100 mA (最大)


    Original     		PDF 2SC6026CT 2SA2154CT 2SC6026CT 2SA2154CT

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.4 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 1 0.8 ± 0.05 1.2 ± 0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)


    Original     		PDF 2SA2154MFV 2SC6026MFV

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV

    missile guidance ic

    Abstract: 2SA2154 2SC6026
    Text: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) : VCEO = 50 V, IC = 100 mA (max) • High hFE • Complementary to 2SA2154


    Original     		PDF 2SC6026 2SA2154 missile guidance ic 2SA2154 2SC6026

    2SC6026

    Abstract: 2SA2154
    Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications • High voltage and high current 0.6±0.05 • High hFE : hFE = 120~400 • Complementary to 2SC6026 0.35±0.05 : VCEO = −50 V, IC = −100 mA (max)


    Original     		PDF 2SA2154 2SC6026 2SC6026 2SA2154

    2SA2154

    Abstract: 2SC6026
    Text: 2SC6026 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6026 ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 • 高耐圧です。 • コレクタ電流が大きい。: IC = 100 mA (最大) • 電流増幅率が高い。


    Original     		PDF 2SC6026 2SA2154 2SA2154 2SC6026

    2SA2154MFV

    Abstract: 2SC6026MFV 2SA21
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV 2SA21

    Untitled

    Abstract: No abstract text available
    Text: 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC6026CT General Purpose Amplifier Applications • Unit: mm High voltage and high current 0.6±0.05 0.5±0.03 Complementary to 2SA2154CT ３ ２ 0.25±0.03 １ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026CT 2SA2154CT

    transistor marking hy

    Abstract: 2SA2154MFV 2SC6026MFV PCT 245
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications High voltage and high current • Complementary to 2SA2154MFV • Lead (Pb) - free 1.2 ± 0.05 : hFE = 120~400 3 Unit Collector-base voltage


    Original     		PDF 2SC6026MFV 2SA2154MFV transistor marking hy 2SA2154MFV 2SC6026MFV PCT 245

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV

    2SC6026

    Abstract: 2SA2154 2SA21
    Text: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications High voltage and high current • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154


    Original     		PDF 2SC6026 2SA2154 2SC6026 2SA2154 2SA21

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SC6026MFV シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6026MFV 単位 : mm 0.22±0.05 • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) • 電流増幅率が高い。 • hFE リニアリティが優れています。


    Original     		PDF 2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026


    Original     		PDF 2SA2154 2SC6026

    2SA2154MFV

    Abstract: 2SA21 2SC6026MFV 21l1A 2sc602
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SA21 2SC6026MFV 21l1A 2sc602

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC6026CT Package Name: CST3 1. Thermal tests Test Item Heat resistance Reflow Temperature cycling - - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s


    Original     		PDF 2SC6026CT

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC6026MFV Package Name: VESM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s


    Original     		PDF 2SC6026MFV

    Untitled

    Abstract: No abstract text available
    Text: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154 : VCEO = 50 V, IC = 100 mA (max)


    Original     		PDF 2SC6026 2SA2154 04esented

    TAH6N201U

    Abstract: TAH8N401K 1SS361CT 1SS387CT 1SS417CT TPD4113K MT3S106
    Text: C O N T E N T S 東芝半導体情報誌アイ 2005年2月号 2 今月の新製品情報 VOLUME 151 1チップインバータIC .2 2ビット 2電源片方向レベルシフタIC .2 Lead Frame Chip Scale Package.3


    Original     		PDF TPD4113K/TPD4113AK TPD4113K) 00V/1A TPD4113K 5HZIP23 TAH8N401K TAH6N201U 025mA TAH6N201U TAH8N401K 1SS361CT 1SS387CT 1SS417CT TPD4113K MT3S106