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    21L1A Search Results

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    21L1A Price and Stock

    Lattice Semiconductor Corporation LPTM21L-1ABG100I

    IC PLATFORM MANAGER 3.3VDC 100BG
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    DigiKey LPTM21L-1ABG100I Tray 830 1
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    Mouser Electronics LPTM21L-1ABG100I 204
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    Newark LPTM21L-1ABG100I Bulk 840
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    Panasonic Electronic Components MSMF021L1A2

    MOTOR AC SERVO 100V LI 200W IP65
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    DigiKey MSMF021L1A2 Box 1
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    Mouser Electronics MSMF021L1A2
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    RS MSMF021L1A2 Bulk 1
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    Master Electronics MSMF021L1A2
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    Panasonic Electronic Components MHMF021L1A2

    SERVOMOTOR 3000 RPM 100V
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    DigiKey MHMF021L1A2 Box 1
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    Mouser Electronics MHMF021L1A2
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    RS MHMF021L1A2 Bulk 1
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    Master Electronics MHMF021L1A2
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    Panasonic Electronic Components MQMF021L1A2

    SERVOMOTOR 3000 RPM 100V
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    DigiKey MQMF021L1A2 Box 1
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    Mouser Electronics MQMF021L1A2
    • 1 $620
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    RS MQMF021L1A2 Bulk 1
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    Master Electronics MQMF021L1A2
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    Panasonic Electronic Components MHMF021L1A1

    SERVOMOTOR 3000 RPM 100V
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    DigiKey MHMF021L1A1 Box 1
    • 1 $574.08
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    Mouser Electronics MHMF021L1A1
    • 1 $620
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    RS MHMF021L1A1 Bulk 1
    • 1 $638.74
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    Master Electronics MHMF021L1A1
    • 1 $531.54
    • 10 $502.2
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    21L1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV

    Untitled

    Abstract: No abstract text available
    Text: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2101MFV, RN2102MFV, RN2103MFV RN2104MFV, RN2105MFV, RN2106MFV Unit: mm z Complementary to the RN1101MFV to RN1106MFV R1 (kΩ) R2 (kΩ)


    Original     		PDF RN2101MFVâ RN2106MFV RN2101MFV, RN2102MFV, RN2103MFV RN2104MFV, RN2105MFV, RN1101MFV RN1106MFV

    sat 1205

    Abstract: 2SA1955FV
    Text: 2SA1955FV シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1955FV ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 0.22±0.05 項 目 記 号 定 格 2 単位 コ レ ク タ ･ ベ ー ス 間 電 圧


    Original     		PDF 2SA1955FV sat 1205 2SA1955FV

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV

    RN1107MFV

    Abstract: RN1109MFV RN2107MFV RN2108MFV RN2109MFV
    Text: RN2107MFV～RN2109MFV 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2107MFV, RN2108MFV, RN2109MFV ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		PDF RN2107MFVRN2109MFV RN2107MFV, RN2108MFV, RN2109MFV RN1107MFVRN1109MFV RN2107MFV2109MFV RN2107MFV RN2108MFV RN1107MFV RN1109MFV RN2107MFV RN2108MFV RN2109MFV

    RN1114MFV

    Abstract: RN1118MFV RN2114 RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV
    Text: RN2114MFV～RN2118MFV 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV 単位 : mm R1 (kΩ) R2 (kΩ) RN2114MFV 1 10 RN2115MFV 2.2 10 RN2116MFV 4.7 10 RN2117MFV


    Original     		PDF RN2114MFVRN2118MFV RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV RN1114MFVRN1118MFV RN2114MFV RN2115MFV RN1114MFV RN1118MFV RN2114 RN2116MFV RN2118MFV

    RN1104FV

    Abstract: RN2101FV RN1105FV RN1101FV RN1102FV RN1103FV RN1106FV RN2106FV
    Text: RN1101FV~RN1106FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1101FV, RN1102FV, RN1103FV RN1104FV, RN1105FV, RN1106FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm Ultra-small package, suited to very high density mounting


    Original     		PDF RN1101FVRN1106FV RN1101FV, RN1102FV, RN1103FV RN1104FV, RN1105FV, RN1106FV RN2101FV RN2106FV RN1104FV RN1105FV RN1101FV RN1102FV RN1103FV RN1106FV RN2106FV

    Untitled

    Abstract: No abstract text available
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Unit: mm 1.2 ± 0.05 A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV and RN2113MFV


    Original     		PDF RN1112MFV RN1113MFV RN1112MFV, RN2112MFV RN2113MFVmitation,

    Untitled

    Abstract: No abstract text available
    Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV, RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z A wide range of resistor values is available for use in various circuits.


    Original     		PDF RN2112MFV RN2113MFV RN2112MFV, RN1112MFV RN1113MFV

    RN1110MFV

    Abstract: RN1111MFV RN2110MFV RN2111MFV
    Text: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110MFV,RN1111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05 0.80 ± 0.05 0.4 0.8 ± 0.05 1 1 0.4 A wide range of resistor values is available for use in various circuits.


    Original     		PDF RN1110MFV RN1111MFV RN2110MFV RN2111MFV RN1111MFV RN2111MFV

    RN1131MFV

    Abstract: RN2131MFV RN2132MFV
    Text: RN1131MFV,RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131MFV,RN1132MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications z Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1131MFV RN1132MFV RN2131MFV RN2132MFV RN2132MFV

    sat 1205

    Abstract: No abstract text available
    Text: RN2119MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2119MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm 0.22±0.05 z Reduce a quantity of parts and manufacturing process 0.4 1 0.4 0.8±0.05 2


    Original     		PDF RN2119MFV RN1119MFV sat 1205

    Untitled

    Abstract: No abstract text available
    Text: RN1119MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1119MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.32±0.05 1.2±0.05 0.4 0.8±0.05 1 0.4 With built-in bias resistors


    Original     		PDF RN1119MFV RN2119MFV

    Untitled

    Abstract: No abstract text available
    Text: RN2107MFV~RN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.8±0.05 0.4 Complementary to the RN1107MFV~RN1109MFV


    Original     		PDF RN2107MFVâ RN2109MFV RN2107MFV RN2108MFV RN1107MFV RN1109MFV RN2107MFV RN2108MFV

    RN2110FV

    Abstract: RN1110FV
    Text: RN1110FV,RN1111FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110FV, RN1111FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 Simplified circuit design 1 0.4 0.8 ± 0.05 Complementary to RN2110FV and RN2111FV


    Original     		PDF RN1110FV RN1111FV RN1110FV, RN2110FV RN2111FV

    RN1112MFV

    Abstract: RN1113MFV RN2112MFV RN2113MFV
    Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications A wide range of resistor values is available for use in various circuits.


    Original     		PDF RN2112MFV RN2113MFV RN1112MFV RN1113MFV RN1113MFV RN2113MFV

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV

    Untitled

    Abstract: No abstract text available
    Text: RN2107MFV~RN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2107MFV, RN2108MFV, RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 A wide range of resistor values is available for use in various circuits.


    Original     		PDF RN2107MFVâ RN2109MFV RN2107MFV, RN2108MFV, RN1107MFV RN1109MFV RN2107MFV

    2SC5376FV

    Abstract: sat 1205
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) 1.2±0.05 0.32±0.05 Low Collector Saturation Voltage: 0.22±0.05 •


    Original     		PDF 2SC5376FV 2SC5376FV sat 1205

    RN2103FV

    Abstract: RN2104FV RN2105FV RN2106FV RN1101FV RN1106FV RN2101FV RN2102FV
    Text: RN2101FV~RN2106FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101FV, RN2102FV, RN2103FV RN2104FV, RN2105FV, RN2106FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.32±0.05 Built-in bias resistors


    Original     		PDF RN2101FVRN2106FV RN2101FV, RN2102FV, RN2103FV RN2104FV, RN2105FV, RN2106FV RN1101FV RN1106FV RN2101FV RN2103FV RN2104FV RN2105FV RN2106FV RN1106FV RN2101FV RN2102FV

    2SA1955FV

    Abstract: No abstract text available
    Text: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 1 2 3 Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage


    Original     		PDF 2SA1955FV 2SA1955FV

    sat 1205

    Abstract: RN1131MFV RN2131MFV RN2132MFV
    Text: RN1131MFV,RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131MFV,RN1132MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications z Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1131MFV RN1132MFV RN2131MFV RN2132MFV sat 1205 RN2132MFV

    RN2132MFV

    Abstract: RN1131MFV RN2131MFV
    Text: RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131MFV,RN2132MFV Unit : mm z Reduce a quantity of parts and manufacturing process 0.32±0.05 0.8±0.05 0.4 z Simplify circuit design 1.2±0.05 1 0.4 1.2±0.05 z With built-in bias resistors


    Original     		PDF RN2131MFV RN2132MFV RN1131MFV, RN1132MFV RN2132MFV RN1131MFV

    RN1104MFV

    Abstract: RN1101MFV RN1102MFV RN1103MFV RN1105MFV RN1106MFV RN2101MFV RN2106MFV
    Text: RN1101MFV～RN1106MFV 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1101MFV, RN1102MFV, RN1103MFV RN1104MFV, RN1105MFV, RN1106MFV ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用


    Original     		PDF RN1101MFVRN1106MFV RN1101MFV, RN1102MFV, RN1103MFV RN1104MFV, RN1105MFV, RN1106MFV RN2101MFVRN2106MFV RN1101MFV1106MFV RN1101MFV1104MFV RN1104MFV RN1101MFV RN1102MFV RN1103MFV RN1105MFV RN1106MFV RN2101MFV RN2106MFV