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Lattice Semiconductor Corporation LPTM21L-1ABG100I IC PLATFORM MANAGER 3.3VDC 100BG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LPTM21L-1ABG100I	Tray	796		1	1 $31.35 10 $31.35 100 $31.35 1000 $31.35 10000 $31.35	Buy Now
Mouser Electronics	LPTM21L-1ABG100I		204			1 $31.35 10 $31.35 100 $26.16 1000 $26.16 10000 $26.16	Buy Now
Newark	LPTM21L-1ABG100I	Bulk			840	1 - 10 - 100 - 1000 $27.48 10000 $27.48	Buy Now
Flip Electronics	LPTM21L-1ABG100I		1,812			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Panasonic Electronic Components MSMF021L1A1 SERVOMOTOR 3000 RPM 100V
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DigiKey	MSMF021L1A1	Box			1	1 $574.08 10 $574.08 100 $574.08 1000 $574.08 10000 $574.08	Buy Now
Mouser Electronics	MSMF021L1A1					1 $620 10 $558 100 $558 1000 $558 10000 $558	Get Quote
RS	MSMF021L1A1	Bulk			1	1 $638.74 10 $638.74 100 $638.74 1000 $638.74 10000 $638.74	Get Quote
Master Electronics	MSMF021L1A1					1 $523.94 10 $494.41 100 $494.41 1000 $494.41 10000 $494.41	Buy Now
Panasonic Electronic Components MQMF021L1A1 SERVOMOTOR 3000 RPM 100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MQMF021L1A1	Box			1	1 $574.08 10 $574.08 100 $574.08 1000 $574.08 10000 $574.08	Buy Now
Mouser Electronics	MQMF021L1A1					1 $620 10 $558 100 $558 1000 $558 10000 $558	Get Quote
RS	MQMF021L1A1	Bulk			1	1 $638.74 10 $638.74 100 $638.74 1000 $638.74 10000 $638.74	Get Quote
Master Electronics	MQMF021L1A1					1 $523.94 10 $494.41 100 $494.41 1000 $494.41 10000 $494.41	Buy Now
California Eastern Laboratories (CEL) PS2521L-1-A OPTOISOLATOR 5KV TRANS 4SMD
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DigiKey	PS2521L-1-A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components MQMF021L1A2 SERVOMOTOR 3000 RPM 100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MQMF021L1A2	Box			1	1 $574.08 10 $574.08 100 $574.08 1000 $574.08 10000 $574.08	Buy Now
Mouser Electronics	MQMF021L1A2					1 $620 10 $558 100 $558 1000 $558 10000 $558	Get Quote
RS	MQMF021L1A2	Bulk			1	1 $638.74 10 $638.74 100 $638.74 1000 $638.74 10000 $638.74	Get Quote
Master Electronics	MQMF021L1A2					1 $523.94 10 $494.41 100 $494.41 1000 $494.41 10000 $494.41	Buy Now

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21L1A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2SC6026MFV 2SA2154MFV	PDF
Untitled Abstract: No abstract text available Text: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2101MFV, RN2102MFV, RN2103MFV RN2104MFV, RN2105MFV, RN2106MFV Unit: mm z Complementary to the RN1101MFV to RN1106MFV R1 (kΩ) R2 (kΩ)	Original	RN2101MFVâ RN2106MFV RN2101MFV, RN2102MFV, RN2103MFV RN2104MFV, RN2105MFV, RN1101MFV RN1106MFV	PDF
sat 1205 Abstract: 2SA1955FV Text: 2SA1955FV シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1955FV ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 0.22±0.05 項目記号定格 2 単位コレクタ･ベース間電圧	Original	2SA1955FV sat 1205 2SA1955FV	PDF
2SA2154MFV Abstract: 2SC6026MFV Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity	Original	2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV	PDF
RN1107MFV Abstract: RN1109MFV RN2107MFV RN2108MFV RN2109MFV Text: RN2107MFV～RN2109MFV 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2107MFV, RN2108MFV, RN2109MFV ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用	Original	RN2107MFVRN2109MFV RN2107MFV, RN2108MFV, RN2109MFV RN1107MFVRN1109MFV RN2107MFV2109MFV RN2107MFV RN2108MFV RN1107MFV RN1109MFV RN2107MFV RN2108MFV RN2109MFV	PDF
RN1114MFV Abstract: RN1118MFV RN2114 RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV Text: RN2114MFV～RN2118MFV 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV 単位 : mm R1 (kΩ) R2 (kΩ) RN2114MFV 1 10 RN2115MFV 2.2 10 RN2116MFV 4.7 10 RN2117MFV	Original	RN2114MFVRN2118MFV RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV RN1114MFVRN1118MFV RN2114MFV RN2115MFV RN1114MFV RN1118MFV RN2114 RN2116MFV RN2118MFV	PDF
RN1104FV Abstract: RN2101FV RN1105FV RN1101FV RN1102FV RN1103FV RN1106FV RN2106FV Text: RN1101FV~RN1106FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1101FV, RN1102FV, RN1103FV RN1104FV, RN1105FV, RN1106FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm Ultra-small package, suited to very high density mounting	Original	RN1101FVRN1106FV RN1101FV, RN1102FV, RN1103FV RN1104FV, RN1105FV, RN1106FV RN2101FV RN2106FV RN1104FV RN1105FV RN1101FV RN1102FV RN1103FV RN1106FV RN2106FV	PDF
Untitled Abstract: No abstract text available Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Unit: mm 1.2 ± 0.05 A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV and RN2113MFV	Original	RN1112MFV RN1113MFV RN1112MFV, RN2112MFV RN2113MFVmitation,	PDF
Untitled Abstract: No abstract text available Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV, RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z A wide range of resistor values is available for use in various circuits.	Original	RN2112MFV RN2113MFV RN2112MFV, RN1112MFV RN1113MFV	PDF
RN1110MFV Abstract: RN1111MFV RN2110MFV RN2111MFV Text: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110MFV,RN1111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05 0.80 ± 0.05 0.4 0.8 ± 0.05 1 1 0.4 A wide range of resistor values is available for use in various circuits.	Original	RN1110MFV RN1111MFV RN2110MFV RN2111MFV RN1111MFV RN2111MFV	PDF
RN1131MFV Abstract: RN2131MFV RN2132MFV Text: RN1131MFV,RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131MFV,RN1132MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications z Reduce a quantity of parts and manufacturing process	Original	RN1131MFV RN1132MFV RN2131MFV RN2132MFV RN2132MFV	PDF
sat 1205 Abstract: No abstract text available Text: RN2119MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2119MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm 0.22±0.05 z Reduce a quantity of parts and manufacturing process 0.4 1 0.4 0.8±0.05 2	Original	RN2119MFV RN1119MFV sat 1205	PDF
Untitled Abstract: No abstract text available Text: RN1119MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1119MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.32±0.05 1.2±0.05 0.4 0.8±0.05 1 0.4 With built-in bias resistors	Original	RN1119MFV RN2119MFV	PDF
Untitled Abstract: No abstract text available Text: RN2107MFV~RN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.8±0.05 0.4 Complementary to the RN1107MFV~RN1109MFV	Original	RN2107MFVâ RN2109MFV RN2107MFV RN2108MFV RN1107MFV RN1109MFV RN2107MFV RN2108MFV	PDF

RN2110FV Abstract: RN1110FV Text: RN1110FV,RN1111FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110FV, RN1111FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 Simplified circuit design 1 0.4 0.8 ± 0.05 Complementary to RN2110FV and RN2111FV	Original	RN1110FV RN1111FV RN1110FV, RN2110FV RN2111FV	PDF
RN1112MFV Abstract: RN1113MFV RN2112MFV RN2113MFV Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications A wide range of resistor values is available for use in various circuits.	Original	RN2112MFV RN2113MFV RN1112MFV RN1113MFV RN1113MFV RN2113MFV	PDF
2SA2154MFV Abstract: 2SC6026MFV Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV	PDF
Untitled Abstract: No abstract text available Text: RN2107MFV~RN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2107MFV, RN2108MFV, RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 A wide range of resistor values is available for use in various circuits.	Original	RN2107MFVâ RN2109MFV RN2107MFV, RN2108MFV, RN1107MFV RN1109MFV RN2107MFV	PDF
2SC5376FV Abstract: sat 1205 Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) 1.2±0.05 0.32±0.05 Low Collector Saturation Voltage: 0.22±0.05 •	Original	2SC5376FV 2SC5376FV sat 1205	PDF
RN2103FV Abstract: RN2104FV RN2105FV RN2106FV RN1101FV RN1106FV RN2101FV RN2102FV Text: RN2101FV~RN2106FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101FV, RN2102FV, RN2103FV RN2104FV, RN2105FV, RN2106FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.32±0.05 Built-in bias resistors	Original	RN2101FVRN2106FV RN2101FV, RN2102FV, RN2103FV RN2104FV, RN2105FV, RN2106FV RN1101FV RN1106FV RN2101FV RN2103FV RN2104FV RN2105FV RN2106FV RN1106FV RN2101FV RN2102FV	PDF
2SA1955FV Abstract: No abstract text available Text: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 1 2 3 Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage	Original	2SA1955FV 2SA1955FV	PDF
sat 1205 Abstract: RN1131MFV RN2131MFV RN2132MFV Text: RN1131MFV,RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131MFV,RN1132MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications z Reduce a quantity of parts and manufacturing process	Original	RN1131MFV RN1132MFV RN2131MFV RN2132MFV sat 1205 RN2132MFV	PDF
RN2132MFV Abstract: RN1131MFV RN2131MFV Text: RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131MFV,RN2132MFV Unit : mm z Reduce a quantity of parts and manufacturing process 0.32±0.05 0.8±0.05 0.4 z Simplify circuit design 1.2±0.05 1 0.4 1.2±0.05 z With built-in bias resistors	Original	RN2131MFV RN2132MFV RN1131MFV, RN1132MFV RN2132MFV RN1131MFV	PDF
RN1104MFV Abstract: RN1101MFV RN1102MFV RN1103MFV RN1105MFV RN1106MFV RN2101MFV RN2106MFV Text: RN1101MFV～RN1106MFV 東芝トランジスタシリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1101MFV, RN1102MFV, RN1103MFV RN1104MFV, RN1105MFV, RN1106MFV ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用	Original	RN1101MFVRN1106MFV RN1101MFV, RN1102MFV, RN1103MFV RN1104MFV, RN1105MFV, RN1106MFV RN2101MFVRN2106MFV RN1101MFV1106MFV RN1101MFV1104MFV RN1104MFV RN1101MFV RN1102MFV RN1103MFV RN1105MFV RN1106MFV RN2101MFV RN2106MFV	PDF

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21L1A Search Results

21L1A Price and Stock

Lattice Semiconductor Corporation LPTM21L-1ABG100I

Panasonic Electronic Components MSMF021L1A1

Panasonic Electronic Components MQMF021L1A1

California Eastern Laboratories (CEL) PS2521L-1-A

Panasonic Electronic Components MQMF021L1A2

21L1A Datasheets Context Search

Untitled

Untitled

sat 1205

2SA2154MFV

RN1107MFV

RN1114MFV

RN1104FV

Untitled

Untitled

RN1110MFV

RN1131MFV

sat 1205

Untitled

Untitled

RN2110FV

RN1112MFV

2SA2154MFV

Untitled

2SC5376FV

RN2103FV

2SA1955FV

sat 1205

RN2132MFV

RN1104MFV