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    2SA2154MFV Price and Stock

    Toshiba America Electronic Components 2SA2154MFV-Y,L3F

    TRANS PNP 50V 0.15A VESM
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    DigiKey 2SA2154MFV-Y,L3F Digi-Reel 15,375 1
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    • 1000 $0.03882
    • 10000 $0.03424
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    2SA2154MFV-Y,L3F Cut Tape 15,375 1
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    • 1000 $0.03882
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    2SA2154MFV-Y,L3F Reel 8,000 8,000
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    • 10000 $0.02711
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    Avnet Americas 2SA2154MFV-Y,L3F Reel 12 Weeks 8,000
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    • 10000 $0.01989
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    Mouser Electronics 2SA2154MFV-Y,L3F 7,920
    • 1 $0.13
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    • 100 $0.038
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    TTI 2SA2154MFV-Y,L3F Reel 8,000
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    Toshiba America Electronic Components 2SA2154MFVGR,L3F

    TRANS PNP 50V 0.15A VESM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA2154MFVGR,L3F Cut Tape 7,730 1
    • 1 $0.16
    • 10 $0.099
    • 100 $0.16
    • 1000 $0.03882
    • 10000 $0.03424
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    2SA2154MFVGR,L3F Digi-Reel 7,730 1
    • 1 $0.16
    • 10 $0.099
    • 100 $0.16
    • 1000 $0.03882
    • 10000 $0.03424
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    2SA2154MFVGR,L3F Reel 8,000
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    • 10000 $0.02711
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    Avnet Americas 2SA2154MFVGR,L3F Reel 12 Weeks 8,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.01989
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    Mouser Electronics 2SA2154MFVGR,L3F 3,460
    • 1 $0.13
    • 10 $0.084
    • 100 $0.038
    • 1000 $0.03
    • 10000 $0.018
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    TTI 2SA2154MFVGR,L3F Reel 8,000
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    Toshiba America Electronic Components 2SA2154MFV-GR(TPL3

    TRANS PNP 50V 0.15A VESM
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    DigiKey 2SA2154MFV-GR(TPL3 Reel
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    2SA2154MFV-GR(TPL3 Cut Tape 1
    • 1 $0.22
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    2SA2154MFV-GR(TPL3 Digi-Reel 1
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    Toshiba America Electronic Components 2SA2154MFVGR,L3F(T

    Transistor, Pnp, 50V, 0.15A, Sot-723 Rohs Compliant: Yes |Toshiba 2SA2154MFVGR, L3F(T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 2SA2154MFVGR,L3F(T Cut Tape 8,000 5
    • 1 $0.188
    • 10 $0.131
    • 100 $0.053
    • 1000 $0.027
    • 10000 $0.027
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    Chip One Stop 2SA2154MFVGR,L3F(T Cut Tape 13,084
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    • 100 $0.0308
    • 1000 $0.0218
    • 10000 $0.0183
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    Toshiba America Electronic Components 2SA2154MFV-Y,L3F(T

    Transistor, Pnp, 50V, 0.15A, Sot-723 Rohs Compliant: Yes |Toshiba 2SA2154MFV-Y, L3F(T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 2SA2154MFV-Y,L3F(T Cut Tape 5
    • 1 $0.155
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    • 100 $0.05
    • 1000 $0.041
    • 10000 $0.041
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    2SA2154MFV-Y,L3F(T Reel 8,000
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    • 10000 $0.029
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    Chip One Stop 2SA2154MFV-Y,L3F(T Cut Tape 45
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    EBV Elektronik 2SA2154MFV-Y,L3F(T 13 Weeks 8,000
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    2SA2154MFV Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA2154MFV Toshiba General Purpose Transistors (Single); Surface Mount Type: Y; Package: VESM; Number of Pins: 3; Comments: General-purpose; Part Number: 2SC6026MFV; DC Current Gain hFE, min: (min 120) (max 400); DC Current Gain hFE, max: (max -0.3); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -50) Original PDF
    2SA2154MFV-GR Toshiba 2SA2154 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA2154MFVGR,L3F Toshiba America Electronic Components PNP TRANSISTOR VCEO-50V IC-0.15A Original PDF
    2SA2154MFV-GR(TPL3) Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP VESM Original PDF
    2SA2154MFV-GR(TPL3 Toshiba 2SA2154 - Bipolar Transistors -150mA -50V Original PDF
    2SA2154MFV-Y Toshiba 2SA2154 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA2154MFV-Y,L3F Toshiba America Electronic Components PNP TRANSISTOR VCEO-50V IC-0.15A Original PDF
    2SA2154MFV-Y(TPL3) Toshiba 2SA2154 - Bipolar Transistors -150mA -50V Original PDF

    2SA2154MFV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


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    2SC6026MFV 2SA2154MFV PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


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    2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.4 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 1 0.8 ± 0.05 1.2 ± 0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)


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    2SA2154MFV 2SC6026MFV PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


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    2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV PDF

    2SA2154MFV

    Abstract: 2SC6026MFV 2SA21
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


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    2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV 2SA21 PDF

    transistor marking hy

    Abstract: 2SA2154MFV 2SC6026MFV PCT 245
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications High voltage and high current • Complementary to 2SA2154MFV • Lead (Pb) - free 1.2 ± 0.05 : hFE = 120~400 3 Unit Collector-base voltage


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    2SC6026MFV 2SA2154MFV transistor marking hy 2SA2154MFV 2SC6026MFV PCT 245 PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA2154MFV 単位 : mm 0.22±0.05 • 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) • 電流増幅率が高い。 • hFE リニアリティが優れています。


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    2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


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    2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


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    2SA2154MFV 2SC6026MFV PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


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    2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV PDF

    2SA2154MFV

    Abstract: 2SA21 2SC6026MFV 21l1A 2sc602
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


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    2SA2154MFV 2SC6026MFV 2SA2154MFV 2SA21 2SC6026MFV 21l1A 2sc602 PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    RTL8211E

    Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?


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    ISL10 ISL11 RTL8211E ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055 PDF

    ISL6259

    Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
    Text: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01


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    PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 (トランジスタダイオード、セルパック) SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


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    TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 PDF

    MCP79MXT-B3

    Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE


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    ISL10 ISL11 MCP79MXT-B3 ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SC6026MFV シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6026MFV 単位 : mm 0.22±0.05 • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) • 電流増幅率が高い。 • hFE リニアリティが優れています。


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    2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV PDF

    RTL8211E

    Abstract: RTL8211CL reference Design MCP79 HS82117 rtl8211cl RTL8211 u9701 ISL6258A C5855 TC7SZ08AFEAPE
    Text: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97 MLB SCHEMATIC A 625211 PRODUCTION RELEASED DATE 08/29/08 ? REFERENCED FROM T18 08/27/2008 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


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    PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF