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    2SC2712 Price and Stock

    Toshiba America Electronic Components 2SC2712-GR,LF

    TRANS NPN 50V 0.15A SMINI
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    DigiKey 2SC2712-GR,LF Reel 54,000 3,000
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    Mouser Electronics 2SC2712-GR,LF 132,906
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    Toshiba America Electronic Components 2SC2712-Y,LF

    TRANS NPN 50V 0.15A SMINI
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    DigiKey 2SC2712-Y,LF Reel 45,000 3,000
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    Avnet Americas 2SC2712-Y,LF Reel 53 Weeks, 1 Days 3,000
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    2SC2712-Y,LF Reel 24 Weeks 3,000
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    Mouser Electronics 2SC2712-Y,LF 174,695
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    Toshiba America Electronic Components 2SC2712-OTE85LF

    TRANS NPN 50V 0.15A TO236
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    DigiKey 2SC2712-OTE85LF Reel 18,000 3,000
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    2SC2712-OTE85LF Cut Tape 5,045 1
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    Mouser Electronics 2SC2712-OTE85LF 7,300
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    Toshiba America Electronic Components 2SC2712-Y,LXHF

    TRANS NPN 50V 0.15A SMINI
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    DigiKey 2SC2712-Y,LXHF Cut Tape 4,047 1
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    2SC2712-Y,LXHF Reel 3,000 3,000
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    Avnet Americas 2SC2712-Y,LXHF Reel 36 Weeks 3,000
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    Mouser Electronics 2SC2712-Y,LXHF 9,330
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    Toshiba America Electronic Components 2SC2712-GR,LXHF

    TRANS NPN 50V 0.15A SMINI
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    DigiKey 2SC2712-GR,LXHF Cut Tape 4,022 1
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    Avnet Americas 2SC2712-GR,LXHF Reel 36 Weeks 3,000
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    Mouser Electronics 2SC2712-GR,LXHF 6,448
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    TTI 2SC2712-GR,LXHF Reel 3,000
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    Find more 2SC2712 price and stock on Findchips.com

    2SC2712 Datasheets (76)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC2712 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF
    2SC2712 Kexin Silicon NPN Epitaxial Type Transistor Original PDF
    2SC2712 Toshiba General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: General-purpose; Part Number: 2SA1162; DC Current Gain hFE, min: (min 70) (max 400); DC Current Gain hFE, max: (max 0.25); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max 50) Original PDF
    2SC2712 Weitron Silicon NPN Transistors Original PDF
    2SC2712 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2712 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2712 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2712 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2712 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2712 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2712 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2712 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2712 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2712 Toshiba Transistor Silicon NPN epitaxial Type (PCT Process) Scan PDF
    2SC2712 Toshiba TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS) Scan PDF
    2SC2712 Toshiba NPN Transistor Scan PDF
    2SC2712 Toshiba Super Mini Package (TO-236 / SOT-23) Transistors Scan PDF
    2SC2712-BL Toshiba 2SC2712 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC2712-BL Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2712BL Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF

    2SC2712 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc2712

    Abstract: C 029 Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE


    Original     		PDF 2SC2712 150mA OT-23 OT-323 2SC2712L 2SC2712G 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2sc2712 C 029 Transistor

    2SC2712

    Abstract: C1000-BL 2SA1162 SC 1000 BL
    Text: 2SC2712 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2712 ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) •


    Original     		PDF 2SC2712 2SA1162 O-236MOD SC-59 2SC2712 C1000-BL 2SA1162 SC 1000 BL

    Untitled

    Abstract: No abstract text available
    Text: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 1/4 12-Dec-2013 2SC2712 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage


    Original     		PDF 2SC2712 OT-23 12-Dec-2013 10Vdc, 10mAdc) OT-23

    TRANSISTOR BL 100

    Abstract: 2SC2712 3040d
    Text: 2SC2712 NPN Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES 3 Collector 1 Base *Power Dissipation PCM: 150 mW Tamb=25 oC 2 *Collector Current ICM: 150 mA A *Collector-Base Voltage


    Original     		PDF 2SC2712 OT-23 100mA, 01-Jun-2002 TRANSISTOR BL 100 2SC2712 3040d

    2SA1162

    Abstract: 2SC2712 2SA1162 PNP
    Text: 2SA1162 PNP Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 3 FEATURES n n n n Collector 3 1 2 A RoHS Compliant Product Low noise : NF= 1dB Typ. ,10dB (Max.) Base L 3 Complementary to 2SC2712.


    Original     		PDF 2SA1162 OT-23 2SC2712. -100mA -10mA 01-Jun-2002 2SA1162 2SC2712 2SA1162 PNP

    2SC2712

    Abstract: 2SC2712GR 2SC2712-BL 2SC2712-GR 2SC2712-Y 2SC2712Y 2SA1162 2SC2712-O SOT 23 LY 2SC2712-GR LG
    Text: 2SC2712 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Low Noise: NF=1dB Typ. , 10db(Max.) Complements of the 2SA1162 A L 3 3 C B Top View CLASSIFICATION OF hFE


    Original     		PDF 2SC2712 OT-23 2SA1162 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL 100mA, 2SC2712 2SC2712GR 2SC2712-BL 2SC2712-GR 2SC2712-Y 2SC2712Y 2SA1162 2SC2712-O SOT 23 LY 2SC2712-GR LG

    2SC2712

    Abstract: 2SA1162 sot-23 Marking LG
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 2SC2712 2SA1162 100mA, 2SC2712 2SA1162 sot-23 Marking LG

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating


    Original     		PDF 2SA1162 2SC2712 OT-23 60Vdc

    MARKING W2 SOT23 TRANSISTOR

    Abstract: ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG
    Text: 2SC2712LT1 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA Max. Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.)


    Original     		PDF 2SC2712LT1 150mA OT-23 2SA1162 600TYP 6614TYP 99221TYP 1102TYP MARKING W2 SOT23 TRANSISTOR ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG

    marking 12Y

    Abstract: 12y sot 23 2SA1037 2SC27 2SC2712 Collector 5v npn TRANSISTOR 12Y marking
    Text: 2SC2712 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to 2SA1037 Collector-current:Ic=100mA 2 Collector-Emiller Voltage:V CE =45V 1. 1.BASE 2.EMITTER 3.COLLECTOR High Totalpower Dissipation Pc=225mW High life And Good Linearity


    Original     		PDF 2SC2712 OT-23 2SA1037 100mA 225mW 100mA, 100MHz 300uS 2SC27 marking 12Y 12y sot 23 2SA1037 2SC2712 Collector 5v npn TRANSISTOR 12Y marking

    PNP Epitaxial Silicon Transistor sot-23

    Abstract: 2SA1037 2SC2712 M6 SOT23-3
    Text: 2SA1037 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to 2SC2712 Collector-current:Ic=-100mA 2 Collector-Emiller Voltage:V CE =-45V 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2SA1037 OT-23 2SC2712 -100mA -100mA, -10mA 300uS 2SA1037 PNP Epitaxial Silicon Transistor sot-23 2SC2712 M6 SOT23-3

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating


    Original     		PDF 2SA1162 2SC2712 OT-23 60Vdc

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG


    Original     		PDF OT-23 2SA1162 2SC2712. -100mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: 2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2712 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)


    Original     		PDF 2SC2712 2SA1162

    Untitled

    Abstract: No abstract text available
    Text: 2SC2712GT1G General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 • This is a Pb−Free Device http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc


    Original     		PDF 2SC2712GT1G SC-59 2SC2712GT1/D

    2SC2712GR

    Abstract: 2SC2712 2SC2712Y
    Text: MCC 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • Complementary to 2SA1162 x Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL 2SA1162 OT-23 2SC2712GR 2SC2712 2SC2712Y

    2SC2712

    Abstract: 2SA1162
    Text: 2SC2712 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2712 ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) •


    Original     		PDF 2SC2712 2SA1162 O-236MOD SC-59 2SC2712 2SA1162

    Untitled

    Abstract: No abstract text available
    Text: 2SA1162 PNP Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product SOT-23 A suffix of “-C” specifies halogen & lead-free A FEATURES    L 3 Low Noise : NF= 1dB Typ. , 10dB (Max.) Complementary to 2SC2712. Small Package


    Original     		PDF 2SA1162 OT-23 2SC2712. -100mA, -10mA 22-Oct-2009

    2SC3340

    Abstract: 2SA1324 2SC3339 2SC3426
    Text: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage


    OCR Scan     		PDF O-236 /SOT-23 2SA1162 15NEW) 2SC2532 2SC2714 2SC2715 2SC2716 2SC2996 2SC3340 2SA1324 2SC3339 2SC3426

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE TRANSISTOR 2SC2712 Unit in mm A U D IO FR EQUENCY GENERAL PURPOSE AM PLIFIER APPLIC A TIO N S High Voltage and High Current : Vq eo = 50V, Ic = 150mA Max. • Excellent hj’E Linearity : hfE (Iq = 0.1mA) / hpE (Ic = 2mA) =0.95 (Typ.)


    OCR Scan     		PDF 2SC2712 150mA 2SA1162 -I-CL25

    transistor toshiba marking hf

    Abstract: 2SA1162 2SC2712
    Text: 2SC2712 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2712 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V0EO-5OV, Ic = 150mA (Max.) Excellent hjpg Linearity : hFE (Ic = 0.1mA) / hFE (Ic = 2mA) = 0.95 (Typ.)


    OCR Scan     		PDF 2SC2712 150mA 2SA1162 270Hz transistor toshiba marking hf 2SA1162 2SC2712

    2SC3258

    Abstract: 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SC4211 2SD667
    Text: - £ Type No. 2SC 3927 £ Manuf. ^ H B ft SANYO TOSHIBA -yy'ry 2SC3Q90 2SC4157 2SC 3928 = Ü 2SC2812 2SC2712 2SC 3929 / 2SC4211 2SC4116 2SC4211 2SC4211 2SC 3931 fé T fé T fé T fé T 2SC 3932 fé 2SC 3933 2SC4853 2SC 3935 fé T fé T fé T 2SC 3936 fé T


    OCR Scan     		PDF 2SC3090 2SC4157 2SC2812 2SC2712 2SC1623 2SC2463 2SD601A 2SC2412K 2SC4211 2SC4116 2SC3258 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SD667

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    marking CJD

    Abstract: No abstract text available
    Text: 2SC2712 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 2 7 12 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • + 0.5 2 .5 - t t 3 High Voltage and High Current : V0 EO = 5OV, 1(3 = 150mA (Max.) Excellent hpg Linearity


    OCR Scan     		PDF 2SC2712 150mA 2SA1162 961001EAA2' marking CJD