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    2SA2154 Price and Stock

    Toshiba America Electronic Components 2SA2154CT-GR,L3F

    TRANS PNP 50V 0.1A CST3
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    DigiKey 2SA2154CT-GR,L3F Cut Tape 10,578 1
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    2SA2154CT-GR,L3F Reel 10,000 10,000
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    2SA2154CT-GR,L3F Digi-Reel 1
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    Avnet Americas 2SA2154CT-GR,L3F Reel 12 Weeks 10,000
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    Mouser Electronics 2SA2154CT-GR,L3F 97,870
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    TTI 2SA2154CT-GR,L3F Reel 10,000
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    Toshiba America Electronic Components 2SA2154MFV-Y,L3F

    TRANS PNP 50V 0.15A VESM
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    DigiKey 2SA2154MFV-Y,L3F Reel 8,000 8,000
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    2SA2154MFV-Y,L3F Cut Tape 7,890 1
    • 1 $0.18
    • 10 $0.13
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    • 1000 $0.03822
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    2SA2154MFV-Y,L3F Digi-Reel 1
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    Avnet Americas 2SA2154MFV-Y,L3F Reel 12 Weeks 8,000
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    Mouser Electronics 2SA2154MFV-Y,L3F 15,920
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    TTI 2SA2154MFV-Y,L3F Reel 8,000
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    Toshiba America Electronic Components 2SA2154MFVGR,L3F

    TRANS PNP 50V 0.15A VESM
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    DigiKey 2SA2154MFVGR,L3F Cut Tape 7,850 1
    • 1 $0.18
    • 10 $0.13
    • 100 $0.0701
    • 1000 $0.03822
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    2SA2154MFVGR,L3F Reel 8,000
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    2SA2154MFVGR,L3F Digi-Reel 1
    • 1 $0.18
    • 10 $0.13
    • 100 $0.0701
    • 1000 $0.03822
    • 10000 $0.03166
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    Avnet Americas 2SA2154MFVGR,L3F Reel 12 Weeks 8,000
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    Mouser Electronics 2SA2154MFVGR,L3F 3,660
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    • 100 $0.055
    • 1000 $0.032
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    TTI 2SA2154MFVGR,L3F Reel 8,000
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    Toshiba America Electronic Components 2SA2154CT-Y(TPL3)

    TRANS PNP 50V 0.1A CST3
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    Toshiba America Electronic Components 2SA2154MFV-GR(TPL3

    TRANS PNP 50V 0.15A VESM
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    DigiKey 2SA2154MFV-GR(TPL3 Digi-Reel 1
    • 1 $0.25
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    2SA2154MFV-GR(TPL3 Cut Tape 1
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    2SA2154MFV-GR(TPL3 Reel
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    2SA2154 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA2154 Toshiba General Purpose Transistors (Single); Surface Mount Type: Y; Package: fSM; Number of Pins: 3; Comments: General-purpose; Part Number: 2SC6026; DC Current Gain hFE, min: (min 120) (max 400); DC Current Gain hFE, max: (max -0.3); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -50) Original PDF
    2SA2154CT Toshiba 2SA2154 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA2154CT-GR Toshiba 2SA2154 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA2154CT-GR,L3F Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 50V 0.1A Original PDF
    2SA2154CT-GR(TPL3) Toshiba 2SA2154 - Bipolar Transistors 100mA -50V Original PDF
    2SA2154CT-Y Toshiba 2SA2154 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA2154CT-Y(TPL3) Toshiba 2SA2154 - Bipolar Transistors 100mA -50V Original PDF
    2SA2154-GR Toshiba 2SA2154 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA2154-GR(TPL3) Toshiba 2SA2154 - Bipolar Transistors 100mA -0.3V Original PDF
    2SA2154MFV Toshiba General Purpose Transistors (Single); Surface Mount Type: Y; Package: VESM; Number of Pins: 3; Comments: General-purpose; Part Number: 2SC6026MFV; DC Current Gain hFE, min: (min 120) (max 400); DC Current Gain hFE, max: (max -0.3); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -50) Original PDF
    2SA2154MFV-GR Toshiba 2SA2154 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA2154MFVGR,L3F Toshiba America Electronic Components PNP TRANSISTOR VCEO-50V IC-0.15A Original PDF
    2SA2154MFV-GR(TPL3) Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP VESM Original PDF
    2SA2154MFV-GR(TPL3 Toshiba 2SA2154 - Bipolar Transistors -150mA -50V Original PDF
    2SA2154MFV-Y Toshiba 2SA2154 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA2154MFV-Y,L3F Toshiba America Electronic Components PNP TRANSISTOR VCEO-50V IC-0.15A Original PDF
    2SA2154MFV-Y(TPL3) Toshiba 2SA2154 - Bipolar Transistors -150mA -50V Original PDF
    2SA2154-Y Toshiba 2SA2154 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA2154-Y(TPL3) Toshiba 2SA2154 - Bipolar Transistors 100mA -0.3V Original PDF

    2SA2154 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV

    2SA21

    Abstract: 2SA2154 2SC6026
    Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026


    Original     		PDF 2SA2154 2SC6026 2SA21 2SA2154 2SC6026

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)


    Original     		PDF 2SA2154CT 100mA 2SC6026CT

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.4 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 1 0.8 ± 0.05 1.2 ± 0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)


    Original     		PDF 2SA2154MFV 2SC6026MFV

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)


    Original     		PDF 2SA2154CT 100mA 2SC6026CT

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)


    Original     		PDF 2SA2154CT 100mA 2SC6026CT

    missile guidance ic

    Abstract: 2SA2154 2SC6026
    Text: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) : VCEO = 50 V, IC = 100 mA (max) • High hFE • Complementary to 2SA2154


    Original     		PDF 2SC6026 2SA2154 missile guidance ic 2SA2154 2SC6026

    2SC6026

    Abstract: 2SA2154
    Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications • High voltage and high current 0.6±0.05 • High hFE : hFE = 120~400 • Complementary to 2SC6026 0.35±0.05 : VCEO = −50 V, IC = −100 mA (max)


    Original     		PDF 2SA2154 2SC6026 2SC6026 2SA2154

    2SA2154MFV

    Abstract: 2SC6026MFV 2SA21
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV 2SA21

    Untitled

    Abstract: No abstract text available
    Text: 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC6026CT General Purpose Amplifier Applications • Unit: mm High voltage and high current 0.6±0.05 0.5±0.03 Complementary to 2SA2154CT ３ ２ 0.25±0.03 １ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026CT 2SA2154CT

    transistor marking hy

    Abstract: 2SA2154MFV 2SC6026MFV PCT 245
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications High voltage and high current • Complementary to 2SA2154MFV • Lead (Pb) - free 1.2 ± 0.05 : hFE = 120~400 3 Unit Collector-base voltage


    Original     		PDF 2SC6026MFV 2SA2154MFV transistor marking hy 2SA2154MFV 2SC6026MFV PCT 245

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA2154MFV 単位 : mm 0.22±0.05 • 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) • 電流増幅率が高い。 • hFE リニアリティが優れています。


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV

    2SC6026CT

    Abstract: 2SA21 2SA2154CT
    Text: 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC6026CT General Purpose Amplifier Applications • Unit: mm High voltage and high current 0.6±0.05 0.5±0.03 Complementary to 2SA2154CT ３ ２ 0.25±0.03 １ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026CT 2SA2154CT 2SC6026CT 2SA21 2SA2154CT

    2SC6026

    Abstract: 2SA2154 2SA21
    Text: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications High voltage and high current • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154


    Original     		PDF 2SC6026 2SA2154 2SC6026 2SA2154 2SA21

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026


    Original     		PDF 2SA2154 2SC6026

    2SA2154MFV

    Abstract: 2SA21 2SC6026MFV 21l1A 2sc602
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SA21 2SC6026MFV 21l1A 2sc602

    2SA2154

    Abstract: 2SC6026
    Text: 2SA2154 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA2154 ○ 低周波増幅用 単位: mm コレクタ電流が大きい。: IC = −100 mA (最大) 電流増幅率が高い。 • hFE リニアリティが優れています。


    Original     		PDF 2SA2154 2SC6026 2SA2154 2SC6026

    Untitled

    Abstract: No abstract text available
    Text: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154 : VCEO = 50 V, IC = 100 mA (max)


    Original     		PDF 2SC6026 2SA2154 04esented

    2SA21

    Abstract: 2SA2154CT 2SC6026CT
    Text: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)


    Original     		PDF 2SA2154CT -100mA 2SC6026CT 2SA21 2SA2154CT 2SC6026CT