2SA1223 Search Results

2SA1223 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SA1223		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
2SA1223		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
2SA1223		Unknown	The Transistor Manual (Japanese) 1993		Scan	PDF
2SA1223		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
2SA1223		NEC	PNP Silicon High Frequency Transistor		Scan	PDF

2SA1223 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SA1281 Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267 Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400	Original	2SA1201 2SA1202 2SA1203 2SA1204 2SA1205 2SA1206 2SA1207 2SA1208 2SA1209 2SA1210 2SA1281 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267	PDF
NE24483 Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119 Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC	Original	S01543 AF367 AF280S 2N2999 2N2415 2N2416 2SA1245 BFQ24 NE59333 BFQ52 NE24483 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119	PDF
XC6375A Abstract: e68 DC 2SA1223 2SA122 2SA1213 MA735 XC6375 nichicon vR Text: XC6375 Series PWM Controlled, Step down DC/DC Converters HP010199 ◆ CMOS Low Power Consumption ◆ Operating Voltage: 2.2V~10.0V ◆ Output Voltage Range: 2.0V~7.0V ◆ Output Voltage Accuracy: ±2.5% ◆ Oscillator Frequency: 100kHz • Aplications ● Cellular phones, pagers	Original	XC6375 HP010199 100kHz XC6375A301 XC6375A501 2SA1223 XC6375A e68 DC 2SA122 2SA1213 MA735 nichicon vR	PDF
nichicon kz Abstract: XC6375A Text: XC637x Series PWM [Pulse Width Modulation] Controlled Step-up & down DC/DC Converters .lNDEX General Description page1 Selection Guide page1 Ordering Information page*2 XC6371 Series Characteristics XC6372 Series Characteristics XC6375 Series Characteristics	Original	XC637x XC6371 page33 pageS40 XC6372 XC6375 XC6376177 XC6377A333 nichicon kz XC6375A	PDF
2sa1229 Abstract: 2SA1215 2SA1227 SA1244 2SA1224 2SC3115 2sC3L 2SA1216 2SA1220 2SA1220A Text: - 26 - Ta=25<C. EPfäTc=25‘0 m 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 % it if > r y -vyà-y sn. H M H M B U 2SA1223 2SA1224 2SA1225 2SA1226 0CA 1oon to m 66 r B M B M 2SA1227A 2SA1229 2SA1232 2SA1235 2SA1237 2SA1238 2SA1239 2SA1240 2SA1241 2SA1242	OCR Scan	2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 2SC3116 O-126) 2SA1248 2SC3117 2sa1229 2SA1227 SA1244 2SA1224 2SC3115 2sC3L	PDF
2sa1424 Abstract: NE88900 NE889 Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES • HIGH GAIN BANDWIDTH PRODUCT: T h e N E 8 8 9 series of P N P silicon transistors is designed for ultrahigh speed current m ode switching applications and m icrowave amplifiers up to 2 G H z.T h e N E 8 8 9 is available in	OCR Scan	NE88900 NE88912 NE88933 NE88935 NE88900, NE88912, NE88933, NE88935 OT-23) 2sa1424 NE889	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
2sb504 Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ ; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1 n 3 St	OCR Scan	S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V	PDF
2SA1424 Abstract: No abstract text available Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ DESCRIPTION • PNP COMPLEMENT TO NE327 The NE889 series of PNP silicon transistors is designed for uttrahigh speed current mode switching applications and	OCR Scan	NE327 NE88900 NE88912 NE88933 NE88935 NE889 NE88900) NE88935 IS12I 2SA1424	PDF
2SA1424 Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912 Text: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and	OCR Scan	b427414 NE88900 NE88912 NE88933 NE88935 NE327 NE889 NE88900) NE88935 2SA1424 2SA1228 G503 NE327 NE AND micro-X 2SA1223	PDF
nichicon LK Abstract: CQ 637 c3279 nichicon lk series Text: XC6365/66 Series PWM Controlled, PWM/PFM Switchable Step-down DC/DC Converters Preliminary • # # # # # ♦ Input Voltage Range: 2.2~10.0V ♦ Output Voltage Range: 1.5~6.0V ±2.5% ♦ Oscillator Frequency: 300kHz(±15%) ♦ Maximum Duty Ratio: 100% ♦ High Efficiency: 92%	OCR Scan	XC6365/66 300kHz( XC6366) OT-25 20msec/div) nichicon LK CQ 637 c3279 nichicon lk series	PDF
TXD10K40 Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40	OCR Scan	bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G	PDF
2SA1424 Abstract: No abstract text available Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION • HIG H GAIN BANDW IDTH PRO DUCT: f T = 4 GHz The NE889 series of PNP silicon transistors is designed for ultrahigh speed current mode sw itching applications and	OCR Scan	NE88900 NE88912 NE88933 NE88935 NE889 NE88900) NE88935 IL-S-19500 NE88900, 2SA1424	PDF