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    2N697 Price and Stock

    Central Semiconductor Corp 2N697A PBFREE

    TRANS NPN 35V TO39
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    Microchip Technology Inc 2N697

    NPN TRANSISTOR
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    onsemi 2N697

    TRANS NPN 40V TO5
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    NPN TRANSISTOR
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    Microchip Technology Inc JAN2N697

    TRANS NPN 40V TO5
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    2N697 Datasheets (117)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N697 Microsemi NPN Medium Power Silicon Switching Transistor Original PDF
    2N697 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Original PDF
    2N697 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N697 Central Semiconductor Various Transistors Scan PDF
    2N697 Central Semiconductor Transistor Selection Guide Scan PDF
    2N697 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N697 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N697 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N697 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N697 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N697 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N697 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N697 General Diode Transistor Selection Guide Scan PDF
    2N697 General Electric Silicon N-P-N planar transistor. Scan PDF
    2N697 General Transistor Small Signal Transistor Selection Guide Scan PDF
    2N697 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    2N697 Micro Electronics Semiconductor Devices Scan PDF
    2N697 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N697 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N697 Mullard Quick Reference Guide 1977/78 Scan PDF

    2N697 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n697

    Abstract: TRANSISTOR 2n697 2N696 2N697 equivalent 2N697 JAN 2N697S 2N696S
    Text: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C 1 @ TC = 250C (2)


    Original     		PDF MIL-PRF-19500/99 2N696 2N696S 2N697 2N697S 2N696 2N697 MIL-PRF-19500/ MIL-PRF-19500/99) TRANSISTOR 2n697 2N697 equivalent 2N697 JAN 2N697S 2N696S

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N697 • Hermetic TO39 TO-205AD Metal Package. • Ideally suited for General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER VEBO PD PD


    Original     		PDF 2N697 O-205AD) 600mW 300us,

    2N697 JAN

    Abstract: 2N697
    Text: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C 1 @ TC = 250C (2)


    Original     		PDF MIL-PRF-19500/ 2N696 2N696S 2N697 2N697S 2N696 2N697 MIL-PRF-19500/99) 2N697 JAN

    TRANSISTOR 2n697

    Abstract: No abstract text available
    Text: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N697 • Hermetic TO39 TO-205AD Metal Package. • Ideally suited for General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER VEBO PD PD


    Original     		PDF 2N697 O-205AD) 600mW 20MHz 300us, TRANSISTOR 2n697

    2N697

    Abstract: 2N696
    Text: TECHNICAL DATA 2N696 2N697 MIL-PRF QML DEVICES Processed per MIL-PRF-19500/99 NPN MEDIUM-POWER SILICON TRANSISTORS MAXIMUM RATINGS Ratings Symbol Value Units VCBO VEBO PT 60 5.0 0.6 2.0 Vdc Vdc W W Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C 1


    Original     		PDF 2N696 2N697 MIL-PRF-19500/99 Collector-250 2N696, 2N697

    2n697

    Abstract: TRANSISTOR 2n697 2N696 2N696S
    Text: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ T A = 250C 1 @ T C = 250C (2)


    Original     		PDF MIL-PRF-19500/99 2N696 2N696S 2N697 2N697S 2N696, 2N696s, 2N697, TRANSISTOR 2n697

    MIL-S-19500

    Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
    Text: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S


    Original     		PDF 2N497 2N498 2N656 2N657 2N696 2N697 2N1131 2N1132 2N718A 2N1613 MIL-S-19500 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN

    2N718

    Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
    Text: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for


    OCR Scan     		PDF 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, 2N150J. 2N1613. 2N718 SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613

    2n3053A complementary

    Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
    Text: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697


    OCR Scan     		PDF a00S72b 2N2102 2N4036 120MHz 2N697 2N1613 2N3053 2N2270 T0205AD/ 2N3053A 2n3053A complementary 40362 BUX40A 40319 2n4314 2N1893

    2N697

    Abstract: RCA-2N697 rca transistor TRANSISTOR 2n697 RCA Solid State Power Transistor
    Text: E SOLID STATE 38 7 5 08 1 G E S O L I D S T A T E "Öl ÖF|3ö7SDfll 00170Ô4 3 jf" o 1 e 17084 D T-yr-fy High-Speed Power Transistors_ File Number 2N697 Silicon N-P-N Planar Transistor 16 TERMINAL DESIGNATIONS For High-Speed Switching Service in Electronic Data-Processing Systems


    OCR Scan     		PDF 2N697 TQ-205AD RCA-2N697 2N697 rca transistor TRANSISTOR 2n697 RCA Solid State Power Transistor

    TRANSISTOR 2n697

    Abstract: RCA-2N697 2N697 Transistor Data chart QQ170 25C06
    Text: G E SOLID STATE 38 750 81 01 G E SOLID STATE DeT J 3fl750fll 0 0 1 7 0 5 4 3 0 1E 17084 D T -}$ r-l'7 High-Speed Power Transistors_ File Num ber 2N697 16 TERMINAL DESIGNATIONS Silicon N-P-N Planar Transistor For High-Speed Switching Service in Electronic Data-Processing Systems


    OCR Scan     		PDF 2N697 QQ170A4 O-205AD RCA-2N697 30011s, TRANSISTOR 2n697 2N697 Transistor Data chart QQ170 25C06

    SE 442

    Abstract: MARKING M1W 2N696 TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent
    Text: M lL -S -1 9 5 0 0 /9 9 E 31 July 1967 su P e r s e ulng MI L - S - 1 9 5 0 0 /99D 3 D ecem ber MILITARY SPECIFICATION S E M IC O N D U C T O R D E V IC E , T R A N S I S T O R , P I T C H I N G , M E D IU M -P O W E R TYPES 2N696 AND 2N697 T h is s p e c ific a tio n is m a n d a to ry f o r u s e by a ll D e p a r t­


    OCR Scan     		PDF MlL-S-19500/99E L-S-19500/99D 2N696 2N697 500/99D. SE 442 MARKING M1W TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent

    2n1711s

    Abstract: 2N2218S 2N2904S 2N4406 2n4890s 2N4404 2N697S 2N1613S 2N2218AS 2N2219AS
    Text: TO-39 NPN METAL TRANSISTORS AM PLIFIER AND SWITCH Device Type 2N696S 2N697S 2N1613S 2N1711S 2N2218S 2N2218AS 2N2219S 2N2219AS Polarity v CEO V CER+ Vdc NPN NPN NPN NPN NPN NPN NPN NPN 40+ 40 + 50+ 50+ 30 40 30 40 lc max. (mA) 500 800 300 800 800 HpE min. @ IC


    OCR Scan     		PDF 2N696S 2N697S 2N1613S 2N1711S 2N2218S 2N2218AS 2N2219S 2N2219AS BFY50 BFY51 2N2904S 2N4406 2n4890s 2N4404

    2N5978

    Abstract: No abstract text available
    Text: b6E D HA RR IS S E M I C O N D SE CT OR 43 0 2 2 7 1 D D S Q S M b öbS I IHAS 2N6975, 2N6976 2N6977, 2N6978 fjl H A R R I S W • S E M I C O N D U C T O R 5A, 400V and 500V N-Channel IGBTs December 1993 Features Package • 5A, 400V and 500V • JEDEC T0-204AA


    OCR Scan     		PDF 2N6975, 2N6976 2N6977, 2N6978 T0-204AA 2N6976, 2N6977 2N6978 AN72S4 2N5978

    44222

    Abstract: 2N6975 442-22 ic lg 631 2N6976 2N6977 2N6978 S2GS-44222
    Text: Insulated-Gate Bipolar Transistors- 2N6975, 2N6976, 2N6977, 2N6978 File Num ber 2297 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 5 A, 400 V and 500 V Vceom: 2 V T«: 1 /us, 0.5 /j s N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		PDF 2N6975, 2N6976, 2N6977, 2N6978 2N6977 2N6978 44222 2N6975 442-22 ic lg 631 2N6976 S2GS-44222

    Transistor BC177

    Abstract: 2N3053 ZT87 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 Max VcE sat at V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c 500 1.5 150 500 1.5 150 1000 0.35 150 Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 15 Continued Min f T at at Pto,


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 ZT87 2N1131 2N1132 2N4037 BC177

    2n2396

    Abstract: 2N696 2N2395 TI432
    Text: TYPES 2N2395, 2N2396 N-P-N SILICON TRANSISTORS BU LL E T IN NO. DL-S 646083, OCTO BER 1964 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS Formerly TI432, TI433 • Electrically Similar To 2N696 and 2N697 • Compatible Package For Interfacing with


    OCR Scan     		PDF 2N2395, 2N2396 TI432, TI433 2N696 2N697 2N2395 TI432

    2N697

    Abstract: No abstract text available
    Text: P ow er T ra n s is to rs _ T-3Ò-0 5- Gö j_ - File Number 2N697 HARRIS SEMICOND SECTOR 27E J> Silicon N -P -N Planar Transistor • 4 3 D 22 7 1 00n?7D 16 b ■HAS TE R M IN A L D E S IG N A TIO N S


    OCR Scan     		PDF 2N697 92CS-27512 -205A 2N697

    BC337C

    Abstract: bc327c BC338C bc337b 2N1131 2N1132 2N3053 2N4037 2N696 BC107
    Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 500 1.5 150 15 500 1.5 150 1000 0.35 150 at Continued Min f T at Pto,


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BC337C bc327c BC338C bc337b 2N1131 2N1132 2N4037

    2N3019A

    Abstract: 2N3114 2N5682 2N1613A 2N3501 JANTX transistor 2N3725 2N2219 JANTX 2N2219A 2N3020 transistor 2n2270
    Text: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 TO-5 T0205A D hr iff ill Ic m ax A M PS 2N697 40h 0.8 40/120@ 150/10 2N1711 50h 1.0 2N 1613A 50h 2N1893 D E V IC E TY PE !/ ^ C E (sa t) @ If/Iß V @ m A/mA C<P P fx (M H z) 1.5@150/15


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N3019A 2N3114 2N5682 2N3501 JANTX transistor 2N3725 2N2219 JANTX 2N3020 transistor 2n2270

    BC238B

    Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
    Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BC238B BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N4037

    2N3019A

    Abstract: 2N3501A
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N3019A 2N3501A

    2N73A

    Abstract: 2N696 2n697 2N718 ml907 TW58 2W17
    Text: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 7MI31. ?tW58. 2N1420. 2N1507, 2W1613, 2NI71I N-P-N SILICON TRANSISTORS B U L L E T I N N O. D L - S 6 9 3 4 7 1 , M A Y 1 9 6 3 - B E V I S 6 D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for


    OCR Scan     		PDF 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N1420. 2N1507, 2W1613, 2NI71I 2N73A 2N696 2n697 2N718 ml907 TW58 2W17

    BC107

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59 BCY79
    Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2N1131 2N1132 2N4037 BC177 BCY79