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    2N5556 Search Results

    2N5556 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5556 Central Semiconductor Junction FETs Low Frequency/ Low Noise Original PDF
    2N5556 Central Semiconductor Low Frequency / Low Noise Amplifiers Scan PDF
    2N5556 InterFET N-Channel J-FETs Scan PDF
    2N5556 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N5556 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5556 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5556 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5556 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N5556 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5556 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5556 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5556 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5556 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N5556 National Semiconductor Low Frequency - Low Noise Amplifiers Scan PDF
    2N5556 National Semiconductor General Purpose Amplifiers Scan PDF
    2N5556 National Semiconductor N-Channel JFETs Scan PDF
    2N5556 National Semiconductor N-Channel JFETs Scan PDF
    2N5556 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2N5556 Semico N-Channel Junction Field Effect Transistors Scan PDF
    2N5556 Siliconix FET Design Catalogue 1979 Scan PDF

    2N5556 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TP4221

    Abstract: BFW12 2SK34 KE4221 2N4221 motorola bf256 2N4220 2sK34 fet
    Text: JUNCTION FET Item Number Part Number Manufacturer 9,. V BR GSS loss (V) (A) Min (S) Max 2.5m 2.5m 2.5m 3.0m 3.0m 3.0m 3.0m 3.0m 3.0m 3.0m ;3.om 3.0m 3.0m 3.0m 3.0m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 5.0m 5.0m 5.0m 5.0m 5.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m


    Original     		PDF TP5556 2N5556 MPF4220 KE4220 PN4220 SMP4220 TMPF4220 TP4220 TP4221 BFW12 2SK34 KE4221 2N4221 motorola bf256 2N4220 2sK34 fet

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    2N5458 equivalent

    Abstract: pn3685 2N5557 PN4360 2N3820 2N5457 datasheet pn3687 2n3820 noise 2N2608 2N4341
    Text: Junction FETs* Continued Low Frequency/ Low Noise N-Channel TO-18 CASE TYPE NO. Gfs Goss µmho) (mmho) (µ MIN MAX TO-72 2N4220 1.0 TO-72 2N4221 TO-72 V(BR)GSS (V) MIN VGS(off) (V) MIN MAX TO-72 TO-92 Ciss (pF) MAX Crss (pF) MAX IDSS (mA) PIN OUT MIN MAX


    Original     		PDF 2N4220 2N4221 2N4222 2N4338 2N4339 2N4340 2N2608 2N2609 2N3820 2N5020 2N5458 equivalent pn3685 2N5557 PN4360 2N3820 2N5457 datasheet pn3687 2n3820 noise 2N2608 2N4341

    Untitled

    Abstract: No abstract text available
    Text: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0


    OCR Scan     		PDF 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453 2N64S4 NF5101 2N6449 2N6450

    2N3819 equivalent

    Abstract: MPF111 equivalent 2N4220-2 MPF109 2N5556-58 equivalent for 2N3819 2N3819 2N3821-4 2N4223-24 2N5557
    Text: designed for S S ilic o n ix . Perform ance Curves NRL See Section 5 2N5557 • G eneral Purpose Am plifiers 2N5556 n-channel JFETs B E N E F IT S • Low Noise • Low Output Conductance 2N5558 • A B SO LU T E M A X IM U M R A T IN G S at 25°C Gate-Drain or Gate-Source Voltage (Note 1 ) .-30 V


    OCR Scan     		PDF 2N5S56 2N5557 2N5558 2N3819 equivalent MPF111 equivalent 2N4220-2 MPF109 2N5556-58 equivalent for 2N3819 2N3819 2N3821-4 2N4223-24 2N5557

    2N5557

    Abstract: 2N5558 2n5556
    Text: designed for S . S ilic o n ix Performance Curves NRL See Section 5 2N5557 • G eneral Purpose Am plifiers 2N5556 n-channel JFETs B E N E F IT S • Low Noise • Low Output Conductance 2N5558 • A B SO LU T E M A X IM U M R A T IN G S at 25°C Gate-Drain or Gate-Source Voltage (Note 1 ) .-30 V


    OCR Scan     		PDF 2N5S56uctance f-100 2N5557 2N5558 2n5556

    pf5102

    Abstract: NF5101 PF5101 NF5102 NF5103 2N5556
    Text: NATL National Semiconductor N-Channel JFETs Case Style 2N4393 2N5556 2N5557 2N5558 TO-18 TO-72 TO-72 TO-72 g i. R o!Y f, •dss v GS(off) •gss Vgss <mA) (V) VDS ■d (nA) VDG (V) Vos (mmho) Vos Min (fiA ) Max (V) Min Max (V) (nA) Min Max (V) Min Max (V)


    OCR Scan     		PDF 2N4393 2N5556 2N5557 2N5558 NF5101 NF5102 NF5103 PF5101 PF5102 PF5103

    Untitled

    Abstract: No abstract text available
    Text: [j^ [D tUJ TF ©ÄTTM,© LOW P O W E R FIELD EFFE C T T R A N S IS T O R S L@W [ M © D © [ 1  I l [ p y i F D [ l [ ^ s ' M ° © [ n l  [ M [ M I [ L [ F i T T É Type Number Case Style (T O -) Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off)


    OCR Scan     		PDF 2N3684 2N3684A 2N3685 2N3685A 2N3686 2N3686A 2N3687 2N3687A 2N4867 2N4867A

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N5248

    Abstract: BC264C 2N5557 2N5103 2N5485 2n5556 BF244A BF245C 2N5104 BC264A
    Text: N -Channel Junction Field Effect Transistors GENERAL PURPOSE M A X IM U M R A T IN G S ' dss Im A l TYPE VG S off (V Y fs (mm hos) Ciss Crss NF (pF) (pF) (dB) max max max CASE NO. Pd (mW) b v gss (V) m in BC264A BC264E! BC264C BC264D TO-92DE TO-92DE TO-92DE


    OCR Scan     		PDF BC264A O-92DE BC264E! BC264C BC264D BF246A O-92DA 2N5248 2N5557 2N5103 2N5485 2n5556 BF244A BF245C 2N5104

    2N4119

    Abstract: NF5102 NF5103 2n6449 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453
    Text: INTER F E T CORP 2 bE 4 flSbaöfl D 00001=10 7 T- Ÿ/-& 0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi Mm V <'<1c (M.AI Conditions Max (nA> 'V GS (V) Mm {V) -1 5 -1 5 -1 5 -0 2 -4 0 15 -0 8 -1 5 -5 0 -6 0 15 1 0


    OCR Scan     		PDF 2N5556 2N5557 2N5558 2N6451 2N6452 NF5301 2N6449 2N6450 2N4119 NF5102 NF5103 2N6453

    2N3819 equivalent

    Abstract: MPF111 2N3821-4 2N5045 2N3819 2N3921-2 2N4220-2 2N4223-24 2N5457-9 2N5556-58
    Text: designed fo r B . S ilic o n ix Performance Curves NRL See Section 5 • G eneral Purpose Am plifiers MPF109 n-channel JFET B E N E F IT S • Low Cost ■ Analog Switches • Autom atic Insertion Package TO -92 See Section 7 A B S O L U T E M AXIM UM R A T IN G S 25°C


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ï S P R A G U E / S E MI C O ND 8514019 SPRAG U E. GROUP 13 D • ÖS13ÖSG S E M IC O N D S / IC S 93D GQD3tm 4 ■ 0 3 6 1 4 J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Tfl = 25°C V gsiohj


    OCR Scan     		PDF 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453 2N6454 NF5101 NF5102 NF5103

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    MPF111

    Abstract: 2N5459 MOTOROLA 2N3436 2N4220 MOTOROLA 2N4221 motorola 2N5363 2n5556 2n5358 2N5360 2N4222 motorola
    Text: ¥4 MOTOROLA SC -CDIODES/OPTOJ 6367255 MOTOROLA * SC D E | b B b 7 a S S □ □ 3fl03b <D I O D E S / O P T O 34C :> 1 38036 D '7^-2'J-tsr' FIELD-EFFECT TRANSISTORS DICE continued) die n o . 2C4220 LINE SOURCE — DFM131 This die provides performance equal to or better than that of


    OCR Scan     		PDF 3fl03b 2C4220 DFM131 2N3436 2N3437 2N343B 2N3821 2N3822 2N4220 2N4221 MPF111 2N5459 MOTOROLA 2N4220 MOTOROLA 2N4221 motorola 2N5363 2n5556 2n5358 2N5360 2N4222 motorola

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n3819

    Abstract: bf245b
    Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. CASE MAXIMUM RATINGS BV css P4 mW (V) loss (mA) min max Y* (nimbos) min max Vcsf««) (V) min max Cte (pF) max (pF) max Cr„ NF (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11+ 1.2+ 1.2+ 1.2+ 1.2+


    OCR Scan     		PDF BC264A BC264B BC264C BC264D BF246A BF246B BF246C BF247A BF247B BF247C 2n3819 bf245b

    2n3819 equivalent ic

    Abstract: 2N5045-7 2N5045 2N3819 equivalent MPF111 equivalent U401-6 2n4220 2N3821-4 2N3921-2 2N4084-5
    Text: monolithic dual n-channel JFET S NNR BACKS'0€ JUNCTION ISOLATED Siliconix designed f o r . . . • FE T Input Amplifiers B E N E FIT S : ■ Low and Medium Frequency Amplifiers • ■ Impedance Converters ■ Precision instrumentation Amplifiers M inim um System Error and Calibra­


    OCR Scan     		PDF 10mV/Â 2N3921-2, 2N4084-5, 2N5045-7, U401-6 2N4085CHP, 2N5046CHP-47CHP, U403CHP-06CHP 2n3819 equivalent ic 2N5045-7 2N5045 2N3819 equivalent MPF111 equivalent 2n4220 2N3821-4 2N3921-2 2N4084-5

    2N3819 equivalent

    Abstract: 2n3819 2n4222 to 92 2N5045 Siliconix JFET Dual
    Text: 2N4222A 2N4222 2N4221A 2N4221 2N4220A 2N4220 Siliconix designed for . . . • ■ ■ ■ Performance Curves NRL See Section 5 Small-Signal Amplifiers VHF Amplifiers Oscillators M ixers BEN EFITS • High Gain • Low Receiver Noise Figure •A B S O LU TE M A X IM U M R A TIN G S 25°C


    OCR Scan     		PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


    OCR Scan     		PDF semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072