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    2N5436 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5436 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5436 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5436 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5436 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5436 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5436 Unknown Vintage Transistor Datasheets Scan PDF
    2N5436 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF

    2N5436 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5436 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)110 I(C) Max. (A)60 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N5436 time12u

    2N2832

    Abstract: 2N2833 2N2834 MP1612B 2n2526
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 GERMANIUM POWER TRANSISTORS Typ* Himbfr Mia, Dtmtt JtoC we ABSOLUTE MAX. RATINGS Ic A I. A BVefa V 6V,*, V BK . V Mat. la. 9 Mm. va M°C A YC,


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    PDF 200ft 2N2832 2N2833 2N2834 MP1612B 2n2526

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    1N4785

    Abstract: 2N5155 2N2526 2N3731 2N2147 2N2832 MP1612 2N3732 2N2148 2N2527
    Text: GERMANIUM POWER TRANSISTORS Type N um ber M in. Derate J to C W /° C A B S O L U T E M A X . R A T IN G S Ic A I» A f>Kao V B V cto V B V cco V M ax. I cbo @ Max. Vco @ 25 °C A Ah Bias Va V Ic A Min. M ax. f Hz M ax. Sat. Res. Q M ax. Pc Free A ir 9 2S°C


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    PDF MP1612 MP1612A MP1612B MP1613 2N2147 2N2148 500fj r-33H MT-27 MT-28 1N4785 2N5155 2N2526 2N3731 2N2832 2N3732 2N2527

    2N1100

    Abstract: transistor t03 germanium transistor pnp 2n277 2N1100 Power Transistor 2N4277 2N4280 2N5440 2N1039 2n2912 2N2555
    Text: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s


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    PDF DDDD141 2N58A 2N1073 2N2158 2N5325 2N143/13 2N1073A 2N2158A 2N5435 2N174A 2N1100 transistor t03 germanium transistor pnp 2n277 2N1100 Power Transistor 2N4277 2N4280 2N5440 2N1039 2n2912 2N2555

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    2N5486 equivalent

    Abstract: 2H5484
    Text: 2N 5484 2 N5486 ELECTRICAL CHARACTERISTICS continued {7a = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Input Capacitance (V d s - 15 Vdc, Vq s « 0, f « 1.0 MHz) Characteristic C(ss - - 5.0 PF Reverse Transfer Capacitance {Vq s * 15 Vdc, VGS = 0, f ~ 1.0 MHz)


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    PDF N5486 2N5484 2N5486 2N5486 equivalent 2H5484

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


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    PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    in5388

    Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
    Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor


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    PDF plu300 in5388 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic

    2N1100 Power Transistor

    Abstract: DTG-2400 2n4280 germanium transistor pnp 2n277 2N2912 2n58a DTG2400 2N2567 2n1039 2N5435
    Text: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s


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    PDF DDDD141 2N58A 2N1073 2N2158 2N5325 2N143/13 2N1073A 2N2158A 2N5435 2N174A 2N1100 Power Transistor DTG-2400 2n4280 germanium transistor pnp 2n277 2N2912 DTG2400 2N2567 2n1039

    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


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    PDF 1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt