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    2N2907ACSM Search Results

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    2N2907ACSM Price and Stock

    TT Electronics plc 2N2907ACSM

    Bipolar Transistors - BJT TRANS BI-POLAR SS
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    TT Electronics Power and Hybrid / Semelab Limited 2N2907ACSM

    RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
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    Richardson RFPD 2N2907ACSM 55 1
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    TT Electronics Power and Hybrid / Semelab Limited 2N2907ACSM-QR-EB

    RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
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    Richardson RFPD 2N2907ACSM-QR-EB 1
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    2N2907ACSM Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N2907ACSM Semelab HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PA Original PDF
    2N2907ACSM Semelab HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS Original PDF
    2N2907ACSM-RH Semelab High Speed, Medium Power, PNP Switching Transistor Radiation Tested for High Reliability Applications Original PDF

    2N2907ACSM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TST002

    Abstract: 11-7114 121-819 2N2907A 2N2907ACSM 2N2907ACSM-RH TST001 101902 2839E
    Text: 2N2907ACSM-RH HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)


    Original     		PDF 2N2907ACSM-RH 500E-09 000E-09 000E-08 TST002 11-7114 121-819 2N2907A 2N2907ACSM 2N2907ACSM-RH TST001 101902 2839E

    2N2907A surface mount

    Abstract: 2N2907A PNP Transistor 2N2907A 2N2907ACSM
    Text: 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


    Original     		PDF 2N2907ACSM 150mA 2N2907A surface mount 2N2907A PNP Transistor 2N2907A 2N2907ACSM

    LE17

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF 2N2907ACSM4R -600mA 500mW MO-041BA) LE17

    2N2907ACSM

    Abstract: LE17
    Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF 2N2907ACSM -600mA 500mW 2N2907ACSM LE17

    2N2907A LCC3

    Abstract: No abstract text available
    Text: 2N2907ACSM4R HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 1.40 ± 0.15


    Original     		PDF 2N2907ACSM4R 150mA 2N2907A LCC3

    LCC1 weight

    Abstract: 2N2907A LCC3 2N2907ACSM-JQR-B 2N2907ACSM LCC3 weight
    Text: SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


    Original     		PDF 2N2907ACSM 2N2907ACSM" 2N2907ACSM 2N2907ACSM4 2N2907ACSM4-JQR-B 2N2907ACSMCECC 2N2907ACSM-JQR-B 200MHz LCC1 weight 2N2907A LCC3 LCC3 weight

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF 2N2907ACSM -600mA 500mW 08mW/Â

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF 2N2907ACSM4 -600mA 500mW 08mW/Â MO-041BA)

    2N2907A surface mount

    Abstract: No abstract text available
    Text: 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


    Original     		PDF 2N2907ACSM OT23apacitance 150mA 2N2907A surface mount

    2N2907A

    Abstract: 2N2907ACSM
    Text: SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


    Original     		PDF 2N2907ACSM 150mA 2N2907A 2N2907ACSM

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF 2N2907ACSM4R -600mA 500mW 08mW/Â R1JAN2907ACSM4R MO-041BA)

    Untitled

    Abstract: No abstract text available
    Text: 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.


    Original     		PDF 2N2907ACSM 100MHz 150mA

    MO-04

    Abstract: 2N2907ACSM4 LE17
    Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF 2N2907ACSM4 -600mA 500mW MO-041BA) MO-04 2N2907ACSM4 LE17

    2N3810 LCC

    Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
    Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


    Original     		PDF FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 2N3810 LCC 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die

    MCA0616/1

    Abstract: T-120-01B Skynet Electronic
    Text: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology


    Original     		PDF MIL-PRF-19500 QR216, QR217 FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 MCA0616/1 T-120-01B Skynet Electronic

    2N2907A2

    Abstract: 2N2907 NPN Transistor TRANSISTOR NPN 60V 2N2905A-JQR-B 2n2907 pnp bipolar transistor 2N2905 2n2907 TRANSISTOR PNP 2N3036L 2n2907am
    Text: Search Results Part number search for devices beginning "2N2905" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N2905 PNP TO39 40V 0.6A 100 300 10/0.15


    Original     		PDF 2N2905" 2N2905 2N2905A 2N2905ACSM 2N2905A-JQR-B 2N2905AL 2N2905-JQR-B 2N2905L 200MHz 2N2907A2 2N2907 NPN Transistor TRANSISTOR NPN 60V 2n2907 pnp bipolar transistor 2n2907 TRANSISTOR PNP 2N3036L 2n2907am

    Untitled

    Abstract: No abstract text available
    Text: Illl = ^ = Illl SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES ( 0.51 ± 0.10 0.02 ± 0 .004 )


    OCR Scan     		PDF 2N2907ACSM 100MHz 150mA

    Untitled

    Abstract: No abstract text available
    Text: mi i tmit i S E M E 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS m e c h a n ic a l d a t a Dimensions in mm inches FEATURES 0.51 ± 0.10 (0.02 ± 0.0 04)


    OCR Scan     		PDF 2N2907ACSM 2N2907A 600mA

    Untitled

    Abstract: No abstract text available
    Text: mi SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.51 *0.10 (0.02 * 0.004) • SILICON PLANAR EPITAXIAL PNP


    OCR Scan     		PDF 2N2907ACSM 100MHz 150mA

    Untitled

    Abstract: No abstract text available
    Text: büE D m 0133167 0000520 ^33 « S M L B 'T ' 3S-\> SEMELAB PLC SEMELAB 2N2907ACSM HIGH SPEED, MEDIUM POWER, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e n s io n sin m m


    OCR Scan     		PDF 2N2907ACSM

    2n3866s

    Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
    Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1


    OCR Scan     		PDF BYV34-300SM BYV34-400ASM BYV34-- 400RSM 400SM BYV34-500ASM BYV34-500RSM BYV34-500SM LM137-SM 2n3866s DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82

    IRF5402

    Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
    Text: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M


    OCR Scan     		PDF BZX55C5V6CSM T0220SM 2N2222CSM 2N2907CSM BCW33CSM BZX55C7V5CSM 2N2369ACSM 2N3209CSM 3250C BCY59CSM IRF5402 IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342

    BSW68

    Abstract: 2N3055 mj2955 50004 2N3440 ST bdy90 BSV64 BSW68A
    Text: MilitaryAerospace Division Military-Aerospace Division C EC C 5 0 0 0 0 qualified m etal case transistors A p p ro val no M /0 1 0 3 /C E C C /U K available on r e q u e s t w ith options for additional screening to e ith e r se q u e n c e A, B, C or D.


    OCR Scan     		PDF T0220SM 0220M BSS44 BSV64 BSW66A BSW67A BSW68 BSW68A BSX62 BSX63 2N3055 mj2955 50004 2N3440 ST bdy90

    2N3053 NPN transistor

    Abstract: 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N2893 2N2894 2N2894A 2N2894ACSM 2N2894AQF 2N2894CSM 2N2894DCSM 2N2895 2N2896 2N2904 2N2904A 2N2904AL 2N2904L 2N2905 2N2905A 2N2905AL 2N2905L 2N2906 2N2906 CECC 2N2906A 2N2906A CECC 2N2906ACSM


    OCR Scan     		PDF 250mW 80min 30min 40min 4/30m 10/10m 360mW 2N3053 NPN transistor 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917