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    2N2906U Search Results

    2N2906U Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2906U Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Original PDF

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    2N2906U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original
    PDF 2N2906U -50nA -50mA, x10-4 -10mA, -10mA -50mA -100mA 2N2906U

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=-50nA Max. , IBL=-50nA(Max.) A1 C Low Leakage Current @VCE=-30V, VEB=-3V. D Excellent DC Current Gain Linearity.


    Original
    PDF 2N2906U -50nA -50mA,

    1N916

    Abstract: 2N2906E 2N2906U
    Text: SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=-50nA Max. , IBL=-50nA(Max.) A1 C Low Leakage Current @VCE=-30V, VEB=-3V. D Excellent DC Current Gain Linearity.


    Original
    PDF 2N2906U -50nA -50mA, 1N916 2N2906E 2N2906U

    2N2906U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N2906U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking ZC 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ZC 2N2906U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.


    Original
    PDF 2N2906U 2N2906U