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    Untitled

    Abstract: No abstract text available
    Text: 2C3553HV Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)65 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC)200õ I(CBO) Max. (A)200u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.15 h(FE) Max. Current gain.150


    Original     		PDF 2C3553HV

    2N3553 motorola

    Abstract: 2n3961 2n3632 2N3553 2N3375 MOTOROLA 2n3553
    Text: MOTOROLA i SC -CDIODES/OPTOJ 6367255 MOTOROLA SC 34 DE J t . 3 t . 7 E 5 5 DIODES/OPTO 34C 3 80 50 7" SILICON RF TRANSISTOR DICE (continued) ' - "3 I I DOaf iDSD - D 23 2C3553 DIE NO. — NPN LINE SOURCE — RF502.140 This die provides performance equal to or better than that of


    OCR Scan     		PDF RF502 2N3375 2N3553 2N3632 2N3961 2C3553 2N3553 motorola 2n3961 MOTOROLA 2n3553

    Untitled

    Abstract: No abstract text available
    Text: MbE J> t3b?SS4 00^2157 4 • HOTbT'31‘2 3 MOTOROLA SC X S T R S /R F MOTOROLA SEMICONDUCTOR) TECHNICAL DATA 2C3553HV Chip NPN Silicon High-Frequency Transistor DM0 uum Discrete Military Operation . . .designed ter am plifier and oscillator applications. Suitable as output, driver or predriver


    OCR Scan     		PDF 2C3553HV