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    Abstract: No abstract text available
    Text: 2C3553HV Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)65 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC)200õ I(CBO) Max. (A)200u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.15 h(FE) Max. Current gain.150


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    Untitled

    Abstract: No abstract text available
    Text: MbE J> t3b?SS4 00^2157 4 • HOTbT'31‘2 3 MOTOROLA SC X S T R S /R F MOTOROLA SEMICONDUCTOR) TECHNICAL DATA 2C3553HV Chip NPN Silicon High-Frequency Transistor DM0 uum Discrete Military Operation . . .designed ter am plifier and oscillator applications. Suitable as output, driver or predriver


    OCR Scan     		PDF 2C3553HV