Untitled
Abstract: No abstract text available
Text: INDEX NEW ADVANCED INFORMATION 29F001T/B 1M-BIT [128K x 8]CMOS FLASH MEMORY FEATURES • Status Reply – Data polling & Toggle bit for detection of program and erase cycle completion. • Chip protect/unprotect for 5V only system or 5V/12V system • 100,000 minimum erase/program cycles
|
Original
|
PDF
|
MX29F001T/B
131072x8
70/90/120ns
32K-Bytex1,
64K-Byte
PM0515
|
winbond 25080
Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010
|
Original
|
PDF
|
2732B
27C100
27HB010
27C256
27HC64
27C128
27C040
7128A
winbond 25080
29F200BB
16LF648A
89V51RD2
18f252
89S51
National SEMICONDUCTOR GAL16V8
29sf040
12f675
29F400BB
|
P1338
Abstract: No abstract text available
Text: 29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current
|
Original
|
PDF
|
MX29F001T/B
131072x8
55/70/90/120ns
32K-Byte
64K-Byte
JUN/14/2001
JUL/01/2002
JUL/09/2002
AUG/12/2002
PM0515
P1338
|
Untitled
Abstract: No abstract text available
Text: 29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current
|
Original
|
PDF
|
MX29F001T/B
131072x8
55/70/90/120ns
32K-Byte
64K-Byte
eras38
JUN/14/2001
JUL/01/2002
JUL/09/2002
PM0515
|
29f001
Abstract: No abstract text available
Text: 29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current
|
Original
|
PDF
|
MX29F001T/B
131072x8
55/70/90/120ns
32K-Byte
64K-Byte
JUN/14/2001
JUL/01/2002
JUL/09/2002
AUG/12/2002
NOV/20/2002
29f001
|
Untitled
Abstract: No abstract text available
Text: 29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • Status Reply – Data polling & Toggle bit for detection of program and erase cycle completion. • Chip protect/unprotect for 5V only system or 5V/12V system • 100,000 minimum erase/program cycles
|
Original
|
PDF
|
MX29F001T/B
131072x8
55/70/90/120ns
32K-Bytex1,
64K-Byte
80ms--
80us--
100us
DEC/21/1999
PM0515
|
29F001
Abstract: nec flash device code marking on top MX29F001T MX29F001TQC-90 Macronix marking
Text: 29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current • Command register architecture
|
Original
|
PDF
|
MX29F001T/B
131072x8
90/120ns
32K-Byte
64K-Byte
resC/29/2003
29F001
nec flash device code marking on top
MX29F001T
MX29F001TQC-90
Macronix marking
|
29F001
Abstract: MX29F001T 29f001t
Text: 29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • Status Reply – Data polling & Toggle bit for detection of program and erase cycle completion. • Chip protect/unprotect for 5V only system or 5V/12V system • 100,000 minimum erase/program cycles
|
Original
|
PDF
|
MX29F001T/B
V/12V
100mA
32-pin
131072x8
55/70/90/120ns
DEC/21/1999
JUN/14/2001
29F001
MX29F001T
29f001t
|
Untitled
Abstract: No abstract text available
Text: 29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current
|
Original
|
PDF
|
MX29F001T/B
131072x8
90/120ns
32K-Byte
64K-Byte
thatUL/01/2002
JUL/09/2002
AUG/12/2002
NOV/20/2002
DEC/29/2003
|