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    296 MOS FET Search Results

    296 MOS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    296 MOS FET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor A114

    Abstract: transistor C101 AGR19090E AGR19090EF AGR19090EU JESD22-A114
    Text: Preliminary Product Brief May 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		AGR19090E Hz--1990 AGR19090E AGR19090EU AGR19090EF IS-95 PB03-113RFPP PB03-094RFPP) transistor A114 transistor C101 AGR19090EF JESD22-A114 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief April 2003 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		AGR19090E Hz--1990 AGR19090EU AGR19090EF PB03-094RFPP PB03-068RFPP) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief November 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		AGR19030E AGR19030E AGR19030EU AGR19030EF PB04-013RFPP PB03-111RFPP) PDF

    c101 TRANSISTOR

    Abstract: transistor A114 AGR19060E transistor C101 AGR19060EF AGR19060EU JESD22-A114
    Text: Preliminary Product Brief May 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		AGR19060E Hz--1990 AGR19060E AGR19060EU AGR19060EF PB03-112RFPP PB03-093RFPP) c101 TRANSISTOR transistor A114 transistor C101 AGR19060EF AGR19060EU JESD22-A114 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief April 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		AGR18030E PB03-091RFPP PB03-063RFPP) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief March 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		AGR19125E AGR19125E AGR19125EU AGR19125EF IS-95/97 co-712-4106) PB03-069RFPP PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief May 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		AGR19030E Hz--1990 AGR19030EU AGR19030EF PB03-111RFPP PB03-092RFPP) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief April 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal


    Original     		AGR19060E Hz--1990 AGR19060EU AGR19060EF PB03-093RFPP PB03-067RFPP) PDF

    CDM 82

    Abstract: No abstract text available
    Text: Preliminary Product Brief April 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal


    Original     		AGR19030E Hz--1990 AGR19030EU AGR19030EF PB03-092RFPP PB03-066RFPP) CDM 82 PDF

    Untitled

    Abstract: No abstract text available
    Text: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


    Original     		VN2222NC VN2222NC MS-030, DSPD-20CDIPCNC, B061608. DSFP-VN2222NC A061608 PDF

    2SK1374

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK1374 Silicon N-Channel MOS FET For switching (0.425) unit: mm 0.3+0.1 –0.0 • Features ● High-speed switching ● Wide frequency band ● Incorporating a built-in gate protection-diode ● Allowing 2.5V drive 0.15+0.10


    Original     		2SK1374 15nductor 2SK1374 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE PD7M441H / PD7M440H Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original     		50V/500V PD7M441H PD7M440H 300KHz PD7M441H 150iMAX 36i/W -441H -440H PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2H7M441H / P2H7M440H Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original     		50V/500V P2H7M441H P2H7M440H 300KHz P2H7M441H 150iMAX 36i/W -441H -440H PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Brief June 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		AGR18030EF AGR18030EF P8109-9138 PB04-101RFPP PB04-077RFPP) PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Brief November 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		AGR18030E T10-12, PB04-011RFPP PB03-170RFPP) PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Brief August 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		AGR18030E PB03-170RFPP PB03-091RFPP) PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Brief August 2003 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19045E is a 45 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		AGR19045E Hz--1990 AGR19045EU AGR19045EF PB03-173RFPP PDF

    LV5808MX

    Abstract: CDRH105RNP-100NC Q117 SBM30-03 LV5808M 370khz
    Text: Ordering number : ENA1607 Bi-CMOS IC LV5808MX Step-down Switching Regulator Overview LV5808MX is a 1ch step-down switching regulator. 0.3Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed. Current mode


    Original     		ENA1607 LV5808MX LV5808MX 200mil) A1607-5/5 CDRH105RNP-100NC Q117 SBM30-03 LV5808M 370khz PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1607 Bi-CMOS IC LV5808MX Step-down Switching Regulator Overview LV5808MX is a 1ch step-down switching regulator. 0.3Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed. Current mode


    Original     		ENA1607 LV5808MX LV5808MX 200mil) A1607-5/5 PDF

    mg15g6em1

    Abstract: equivalent MG15G6EM1
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG15G6EM1 HIGH POWER SWITCHING APPLICATIONS. Unit in nan MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source OS Resistance


    OCR Scan     		MG15G6EM1 mg15g6em1 equivalent MG15G6EM1 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC40107BP C*MOS DIGITAL INTEGRATED CIRCUIT SILICO N M ONOLITHIC TC40107BP DUAL 2-INPUT NAND BUFFER/DRIVER TC40107BP is a dual 2-input NAND gate, of which output is of open-drain structure by use of N-channel MOS FET. Being capable of driving a large current,


    OCR Scan     		TC40107BP TC40107BP 500pF, 20kil) 120il 120S2 120ii PDF

    2SK511

    Abstract: 296 mos fet ED44
    Text: bl E D 44<ìb2DS DG13073 OST « H I T 4 2SK511 H I T A C H I / OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING HIGH FREQUENCY POWER AMPLIFIER i n • FEATURES • Superior High Frequency Characteristics. • Low Input and Output Capacitance.


    OCR Scan     		DG13073 2SK511 0D13G75 2SK511 296 mos fet ED44 PDF

    k1304

    Abstract: No abstract text available
    Text: 2SK1304 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • 4 V gate drive device — C an be driven from 5 V source • Suitable for m otor drive, D C -D C converter, pow er sw itch and solenoid drive


    OCR Scan     		2SK1304 k1304 PDF

    rl120n

    Abstract: TC40107B TC40107BP
    Text: TC40107BP C 2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC40107BP DUAL 2-INPUT NAND B U FFER/DRIVER TC40107BP is a dual 2-input NAND gate, of which output is of open-drain structure by use of N-channel MOS FET. Being capable of driving a large current,


    OCR Scan     		TC40107BP TC40107BP 500pF, 20kii) 120il rl120n TC40107B PDF