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    2955G DPAK Search Results

    2955G DPAK Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation

    2955G DPAK Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    nt 2955g

    Abstract: 2955g
    Text: NTD2955, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


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    NTD2955, NVD2955 NTD2955/D nt 2955g 2955g PDF

    nt2955g

    Abstract: nt 2955g 2955G
    Text: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g 2955G PDF

    2955g

    Abstract: nt 2955g nt2955g NTD2955 application note NTD2955G 2955G DPAK equivalent ntd2955 NTD2955-001 ntd2955t4g 369D
    Text: NTD2955, NTD2955P Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, highspeed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge


    Original
    NTD2955, NTD2955P NTD2955/D 2955g nt 2955g nt2955g NTD2955 application note NTD2955G 2955G DPAK equivalent ntd2955 NTD2955-001 ntd2955t4g 369D PDF

    nt2955g

    Abstract: NTP2955G nt 2955g 2955G STD2955T4G DPak Package size NTD2955 application note 369D-01
    Text: NTD2955, NTD2955P, STD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    NTD2955, NTD2955P, STD2955 NTD2955/D nt2955g NTP2955G nt 2955g 2955G STD2955T4G DPak Package size NTD2955 application note 369D-01 PDF

    nt2955g

    Abstract: nt 2955g
    Text: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g PDF

    nt2955g

    Abstract: nt 2955g 2955G ntd2955g NVD2955 NTP2955G NVD2955T4G NTD2955T
    Text: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g 2955G ntd2955g NTP2955G NVD2955T4G NTD2955T PDF

    Untitled

    Abstract: No abstract text available
    Text: NTD2955, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    NTD2955, NVD2955 NTD2955/D PDF