MTP2955
Abstract: TMOS Power FET diode h5e 221A-06 AN569 MTP3055E Motorola TMOS Power FET P-Channel
Text: b 3 b ? 2 S 4 DO'iflfllb 121 • MOTb M O T O R O L A SC C X S T R S / R F MOTOROLA H SEM ICONDUCTO R TECHNICAL DATA M T P 2955 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES RDS on) = 0.3 OHM
|
OCR Scan
|
MTP3055E
MTP2955
b3b7254
MTP2955
TMOS Power FET
diode h5e
221A-06
AN569
MTP3055E
Motorola TMOS Power FET P-Channel
|
PDF
|
2955 mosfet
Abstract: LTC2955TS8-1 LTC2955DDB-1 LTC2955ITS8-2 ltc2955-1 LTC2955IDDB-1 ltc2955 LTC2955-2 LTC2955TS8-2 LTC2955ITS8-1
Text: LTC2955 Pushbutton On/Off Controller with Automatic Turn-On DESCRIPTION FEATURES n n n n n n n n n n Automatic Turn-On Via Voltage Monitor Input Wide Input Supply Range: 1.5V to 36V Low Supply Current: 1.2 A ±25kV ESD HBM on PB Input ±36V Wide Input Voltage for PB Input
|
Original
|
LTC2955
LTC2955-1)
LTC2955-2)
10-Lead
LTC4411
LTC4412HV
LTC4055
LTC4352
2955f
2955 mosfet
LTC2955TS8-1
LTC2955DDB-1
LTC2955ITS8-2
ltc2955-1
LTC2955IDDB-1
ltc2955
LTC2955-2
LTC2955TS8-2
LTC2955ITS8-1
|
PDF
|
a2955
Abstract: 2955 mosfet 2955 SOT-223
Text: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes Applications • • • • Power Supplies PWM Motor Control Converters Power Management
|
Original
|
NTF2955
OT-223
OT-223
a2955
2955 mosfet
2955 SOT-223
|
PDF
|
NTF2955
Abstract: NTF2955T1 NTF2955T3 50Vds
Text: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes http://onsemi.com Applications • • • • Power Supplies PWM Motor Control Converters
|
Original
|
NTF2955
OT-223
NTF2955/D
NTF2955
NTF2955T1
NTF2955T3
50Vds
|
PDF
|
2955 sot223
Abstract: NTF2955 NTF2955T1 NTF2955T3 MJ 2955 data 2955 SOT-223 P-channel sot-223
Text: NTF2955 Power MOSFET −60 V, 2.4 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes http://onsemi.com Applications • • • • Power Supplies PWM Motor Control Converters
|
Original
|
NTF2955
OT-223
NTF2955/D
2955 sot223
NTF2955
NTF2955T1
NTF2955T3
MJ 2955 data
2955 SOT-223
P-channel sot-223
|
PDF
|
2SK3772-01
Abstract: No abstract text available
Text: 2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators
|
Original
|
2SK3772-01
O-220AB
2SK3772-01
|
PDF
|
SPF12
Abstract: No abstract text available
Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
|
Original
|
2SK3774-01L
SPF12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
|
Original
|
2SK3774-01L
|
PDF
|
2sk3773
Abstract: 2SK3773-01MR sd 2955
Text: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators
|
Original
|
2SK3773-01MR
O-220F
dV/d200
2sk3773
2SK3773-01MR
sd 2955
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK3772-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters
|
Original
|
2SK3772-01
O-220AB
|
PDF
|
300v 32a mosfet
Abstract: No abstract text available
Text: 2SK3773-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators
|
Original
|
2SK3773-01MR
O-220F
Repetitive200
300v 32a mosfet
|
PDF
|
diode sj
Abstract: 2SK3774-01L
Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
|
Original
|
2SK3774-01L
diode sj
|
PDF
|
2SK3772-01
Abstract: No abstract text available
Text: 2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators
|
Original
|
2SK3772-01
O-220AB
2SK3772-01
|
PDF
|
2sk3773
Abstract: 12/24 v dc-dc converter schematic 2SK3773-01MR
Text: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators
|
Original
|
2SK3773-01MR
O-220F
2sk3773
12/24 v dc-dc converter schematic
2SK3773-01MR
|
PDF
|
|
|
2SK3775-01
Abstract: No abstract text available
Text: 2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings mm Super FAP-G Series 200406 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)
|
Original
|
2SK3775-01
2SK3775-01
|
PDF
|
fr 2955
Abstract: 2SK3775-01
Text: 2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings mm Super FAP-G Series 200406 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply)
|
Original
|
2SK3775-01
fr 2955
2SK3775-01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET
|
OCR Scan
|
OT-223
|
PDF
|
2955G
Abstract: NTF2955T1G NTF2955 NTF2955T1
Text: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −60 V
|
Original
|
NTF2955
OT-223
NTF2955/D
2955G
NTF2955T1G
NTF2955
NTF2955T1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 mΩ Features General Description Shielded Gate MOSFET Technology High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that
|
Original
|
|
PDF
|
V753
Abstract: FDMS86200DC
Text: FDMS86200DC N-Channel Dual CoolTM Power Trench MOSFET 150 V, 28 A, 17 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package
|
Original
|
FDMS86200DC
FDMS86200DC
V753
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 28 A, 17 mΩ Features General Description Shielded Gate MOSFET Technology High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild
|
Original
|
FDMS86200DC
|
PDF
|
KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
|
OCR Scan
|
|
PDF
|
MTD2955
Abstract: 2955 mosfet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD2955 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r P-Channel Enhancem ent-M ode S ilicon G ate TM O S D PA K fo r Surface M o u n t or Insertion M ount TMOS POWER FET 12 AMPERES rDS{on = 0.3 OHM 60 VOLTS
|
OCR Scan
|
MTD2955
MTD2955
2955 mosfet
|
PDF
|
Marking 2955
Abstract: MMFT2955ET1 MMFT2955E 2955 mosfet
Text: MOTOROLA O rder this docum ent by M M FT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount This advanced E -F E T is a TM O S medium pow er M O SFET designed to withstand high energy in the avalanche and com m uta
|
OCR Scan
|
FT2955E/D
OT-223
318E-04
O-261AA
Marking 2955
MMFT2955ET1
MMFT2955E
2955 mosfet
|
PDF
|
