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    2955 MOSFET Search Results

    2955 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    2955 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2955 mosfet

    Abstract: LTC2955TS8-1 LTC2955DDB-1 LTC2955ITS8-2 ltc2955-1 LTC2955IDDB-1 ltc2955 LTC2955-2 LTC2955TS8-2 LTC2955ITS8-1
    Text: LTC2955 Pushbutton On/Off Controller with Automatic Turn-On DESCRIPTION FEATURES n n n n n n n n n n Automatic Turn-On Via Voltage Monitor Input Wide Input Supply Range: 1.5V to 36V Low Supply Current: 1.2 A ±25kV ESD HBM on PB Input ±36V Wide Input Voltage for PB Input


    Original     		PDF LTC2955 LTC2955-1) LTC2955-2) 10-Lead LTC4411 LTC4412HV LTC4055 LTC4352 2955f 2955 mosfet LTC2955TS8-1 LTC2955DDB-1 LTC2955ITS8-2 ltc2955-1 LTC2955IDDB-1 ltc2955 LTC2955-2 LTC2955TS8-2 LTC2955ITS8-1

    a2955

    Abstract: 2955 mosfet 2955 SOT-223
    Text: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes Applications • • • • Power Supplies PWM Motor Control Converters Power Management


    Original     		PDF NTF2955 OT-223 OT-223 a2955 2955 mosfet 2955 SOT-223

    NTF2955

    Abstract: NTF2955T1 NTF2955T3 50Vds
    Text: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes http://onsemi.com Applications • • • • Power Supplies PWM Motor Control Converters


    Original     		PDF NTF2955 OT-223 NTF2955/D NTF2955 NTF2955T1 NTF2955T3 50Vds

    2955 sot223

    Abstract: NTF2955 NTF2955T1 NTF2955T3 MJ 2955 data 2955 SOT-223 P-channel sot-223
    Text: NTF2955 Power MOSFET −60 V, 2.4 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes http://onsemi.com Applications • • • • Power Supplies PWM Motor Control Converters


    Original     		PDF NTF2955 OT-223 NTF2955/D 2955 sot223 NTF2955 NTF2955T1 NTF2955T3 MJ 2955 data 2955 SOT-223 P-channel sot-223

    2SK3772-01

    Abstract: No abstract text available
    Text: 2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3772-01 O-220AB 2SK3772-01

    SPF12

    Abstract: No abstract text available
    Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3774-01L SPF12

    Untitled

    Abstract: No abstract text available
    Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3774-01L

    2sk3773

    Abstract: 2SK3773-01MR sd 2955
    Text: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3773-01MR O-220F dV/d200 2sk3773 2SK3773-01MR sd 2955

    Untitled

    Abstract: No abstract text available
    Text: 2SK3772-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3772-01 O-220AB

    300v 32a mosfet

    Abstract: No abstract text available
    Text: 2SK3773-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators


    Original     		PDF 2SK3773-01MR O-220F Repetitive200 300v 32a mosfet

    diode sj

    Abstract: 2SK3774-01L
    Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3774-01L diode sj

    2SK3772-01

    Abstract: No abstract text available
    Text: 2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3772-01 O-220AB 2SK3772-01

    2sk3773

    Abstract: 12/24 v dc-dc converter schematic 2SK3773-01MR
    Text: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3773-01MR O-220F 2sk3773 12/24 v dc-dc converter schematic 2SK3773-01MR

    2955 mos

    Abstract: No abstract text available
    Text: 2SK3774-01L,S,SJ FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3774-01L 2955 mos

    fr 2955

    Abstract: 2SK3775-01
    Text: 2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings mm Super FAP-G Series 200406 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		PDF 2SK3775-01 fr 2955 2SK3775-01

    2955G

    Abstract: NTF2955T1G NTF2955 NTF2955T1
    Text: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −60 V


    Original     		PDF NTF2955 OT-223 NTF2955/D 2955G NTF2955T1G NTF2955 NTF2955T1

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 mΩ Features General Description „ Shielded Gate MOSFET Technology „ High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that


    Original     		PDF

    V753

    Abstract: FDMS86200DC
    Text: FDMS86200DC N-Channel Dual CoolTM Power Trench MOSFET 150 V, 28 A, 17 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMS86200DC FDMS86200DC V753

    Untitled

    Abstract: No abstract text available
    Text: FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 28 A, 17 mΩ Features General Description „ Shielded Gate MOSFET Technology „ High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild


    Original     		PDF FDMS86200DC

    MTP2955

    Abstract: TMOS Power FET diode h5e 221A-06 AN569 MTP3055E Motorola TMOS Power FET P-Channel
    Text: b 3 b ? 2 S 4 DO'iflfllb 121 • MOTb M O T O R O L A SC C X S T R S / R F MOTOROLA H SEM ICONDUCTO R TECHNICAL DATA M T P 2955 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES RDS on) = 0.3 OHM


    OCR Scan     		PDF MTP3055E MTP2955 b3b7254 MTP2955 TMOS Power FET diode h5e 221A-06 AN569 MTP3055E Motorola TMOS Power FET P-Channel

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET


    OCR Scan     		PDF OT-223

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


    OCR Scan     		PDF

    MTD2955

    Abstract: 2955 mosfet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD2955 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r P-Channel Enhancem ent-M ode S ilicon G ate TM O S D PA K fo r Surface M o u n t or Insertion M ount TMOS POWER FET 12 AMPERES rDS{on = 0.3 OHM 60 VOLTS


    OCR Scan     		PDF MTD2955 MTD2955 2955 mosfet

    Marking 2955

    Abstract: MMFT2955ET1 MMFT2955E 2955 mosfet
    Text: MOTOROLA O rder this docum ent by M M FT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount This advanced E -F E T is a TM O S medium pow er M O SFET designed to withstand high energy in the avalanche and com m uta­


    OCR Scan     		PDF FT2955E/D OT-223 318E-04 O-261AA Marking 2955 MMFT2955ET1 MMFT2955E 2955 mosfet