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    Untitled

    Abstract: No abstract text available
    Text: AMIC TECHNOLOGY Taiwan , INC. Spec. No. : 04-83-002 Update : 12/17/1999 Pages : 1 of 9 TAPE&REEL PACKING SPECIFICAITON 1. Packing Procedures 2. Carrier Tape Dimensions - 28SOP,26/28SOJ,28TSOP,32sTSOP 3. Carrier Tape Dimensions - 32/40/44SOP,32/40SOJ,32/44/50TSOP,100QFP


    Original     		PDF 28SOP 26/28SOJ 28TSOP 32sTSOP 32/40/44SOP 32/40SOJ 32/44/50TSOP 100QFP 36/48Mini-BGA

    K6X0808T1D

    Abstract: K6X0808T1D-B K6X0808T1D-F K6X0808T1D-Q K6X0808T1D-NF70
    Text: K6X0808T1D Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft October 09, 2002 Preliminary 0.1 revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type November 08, 2002


    Original     		PDF K6X0808T1D 32Kx8 28-SOP-525 28-SOP-450 K6X0808T1D-F K6X0808T1D-Q K6X0808T1D-B K6X0808T1D-NF70

    8254aa

    Abstract: capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041
    Text: Network Components Business Unit CMOS IC Product Catalogue 2002-2003 October 2002 SII offers data sheets on the Internet. On SII-IC.COM, SII offers data sheets which summarize the specifications of each IC. For the latest information, access the following WEB site.


    Original     		PDF CAC0210EJ0150-10/C 8254aa capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041

    Untitled

    Abstract: No abstract text available
    Text: MX27C512 512K-BIT [64Kx8] CMOS EPROM FEATURES • • • • • • 64K x 8 organization Single +5V power supply +12.5V programming voltage Fast access time: 45/55/70/90/100/120/150ns Totally static operation Completely TTL compatible • Operating current: 30mA


    Original     		PDF MX27C512 512K-BIT 64Kx8] 45/55/70/90/100/120/150ns 100uA MX27C512 512K-bit, MAR/02/2000

    K6E0808C1C

    Abstract: K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C
    Text: PRELIMINARY K6E0808C1C-C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.


    Original     		PDF K6E0808C1C-C 32Kx8 12/15/20ns 8/10ns 8/10/10ns 7/10ns 28-TSOP1-0813 K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C

    28DIP600

    Abstract: KM62256CLP-7 KM62256C KM62256CL KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L KM62256CL-L
    Text: KM62256C Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History Draft Data Remark 0.0 Advance information February 12th 1993 Design target 0.1 Initial draft November 2nd 1993 Preliminary 1.0 Finalize September 24th 1994


    Original     		PDF KM62256C 32Kx8 100ns 047MAX 28DIP600 KM62256CLP-7 KM62256CL KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L KM62256CL-L

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM K6E0808V1C-C Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Jun. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.


    Original     		PDF K6E0808V1C-C 32Kx8 28-TSOP1 28-TSOP1-0813

    MX27C512MC12

    Abstract: 27C512-45 IN3064 MX27C512 MX27C512DC-45 MX27C512D MX27C512PC-12
    Text: Introduction Selection Guide MX27C512 512K-BIT 64K x 8 CMOS EPROM FEATURES • • • • • • • • • 64K x 8 organization Single +5V power supply +12.5V programming voltage Fast access time: 45/55/70/90/100/120/150ns Totally static operation Completely TTL compatible


    Original     		PDF MX27C512 512K-BIT 45/55/70/90/100/120/150ns MX27C512 512K-bit, MX27C512MC12 27C512-45 IN3064 MX27C512DC-45 MX27C512D MX27C512PC-12

    300b tube

    Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
    Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM


    Original     		PDF FBGA-11 24-SOJ-300 -SOJ-300 -TSOP2-300AF -SOJ-300B 28-SOJ-300 28-SOJ-300A 28-SOJ-400 300b tube 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64

    GM76C256CLLFW70

    Abstract: GM76C8128CLLFW70 GM76C8128CLLFW55 GM76C256CLLFW55 SOP28 gm76U8128 GM76V8 SOP32 GM76C256CLLFW-70 gm76U8128CLL
    Text: C M O S S TAT I C R A M CMOS SRAMS Part Number GM76C256CLLFW-55 GM76C256CLLT-55 GM76V256CLLFW-85 GM76V256CLLT-85 GM76U256CLLFW-100 GM76U256CLLT-100 GM76C256CLLFW-70 GM76C256CLLT-70 GM76V256CLLFW-100 GM76V256CLLT-100 GM76U256CLLFW-120 GM76U256CLLT-120 GM76C8128CLLFW-55


    Original     		PDF GM76C256CLLFW-55 GM76C256CLLT-55 GM76V256CLLFW-85 GM76V256CLLT-85 GM76U256CLLFW-100 GM76U256CLLT-100 GM76C256CLLFW-70 GM76C256CLLT-70 GM76V256CLLFW-100 GM76V256CLLT-100 GM76C256CLLFW70 GM76C8128CLLFW70 GM76C8128CLLFW55 GM76C256CLLFW55 SOP28 gm76U8128 GM76V8 SOP32 gm76U8128CLL

    GM76C256CLLFW70

    Abstract: GM76V256CLLT-85 SOP28 GM76C8128CLLFW70 uPD431000 GM76C8128CLLT70 GM76C8128CLLFW55
    Text: C M O S S TAT I C R A M CMOS SRAMS • • • • • • • • • • • • • • • • • • • • • • • New Product Part Number GM76C256CLLFW-55 GM76C256CLLT-55 GM76V256CLLFW-85 GM76V256CLLT-85 GM76U256CLLFW-100 GM76U256CLLT-100 GM76C256CLLFW-70


    Original     		PDF GM76C256CLLFW-55 GM76C256CLLT-55 GM76V256CLLFW-85 GM76V256CLLT-85 GM76U256CLLFW-100 GM76U256CLLT-100 GM76C256CLLFW-70 GM76C256CLLT-70 GM76V256CLLFW-100 GM76V256CLLT-100 GM76C256CLLFW70 SOP28 GM76C8128CLLFW70 uPD431000 GM76C8128CLLT70 GM76C8128CLLFW55

    unit inch sdip28

    Abstract: LH52256C lh52256c-70ll
    Text: LH52256C/CH FEATURES • 32,768 x 8 bit organization • Access time: 70 ns MAX. CMOS 256K (32K × 8) Static RAM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SK-DIP 28-PIN SOP • Supply current: Operating: 45 mA (MAX.) 10 mA (MAX.) (tRC, tWC = 1 µs) Standby: 40 µA (MAX.)


    Original     		PDF LH52256C/CH 28-PIN 28TSOP LH52256C 28-pin, 600-mil DIP028-P-0600) unit inch sdip28 LH52256C lh52256c-70ll

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


    OCR Scan     		PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    A14C

    Abstract: LH53259 sharp mask rom
    Text: LH53259 CMOS 256K 32K x 8 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 32,768 words x 8 bit organization • Access time: 150 ns (MAX.) 28-PIN DIP 28-PIN SOP TOP VIEW • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 n-W (MAX.)


    OCR Scan     		PDF LH53259 28-pin, 600-mil 450-mil LH53259 28-pin 28TSOP A14C sharp mask rom

    KM62256D

    Abstract: KM62256DLI-L KM62256DL-L km62256
    Text: KM62256D Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision HSstorv Revision No History Draft Data Remark 0.0 Initial draft M ay 18th 1997 Design target 0.1 First revision - KM62256DLVDLI Isbi = 100 -> 50|xA K M 6 2256D L-L Is b i = 20 - > 1 0 |iA


    OCR Scan     		PDF KM62256D 32Kx8 KM62256DLVDLI KM62256DL-L KM62256DLI-L KM62256D-4/5/7 KM62256DI7DLI KM62256DL-L/DLI-L KM62256DL/DLI km62256

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM62256CL/CL-L 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Time : 55, 70, 8 5 , 100ns Max. • Low P o w e r Dissipation S tandby (CMOS) : 10yuW(Typ.) L-Version 5/iW(Typ.) LL-Version The K M 62 256C L /C L-L is a 2 6 2 ,1 4 4 -b it high-speed


    OCR Scan     		PDF KM62256CL/CL-L 100ns 10yuW KM62256CL/CL-L

    Untitled

    Abstract: No abstract text available
    Text: KM44C4003BS CMOS DRAM ELECTRONICS 4 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time


    OCR Scan     		PDF KM44C4003BS D344bfl

    Untitled

    Abstract: No abstract text available
    Text: KM68257C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial re le a s e w ith P re lim in a ry. A pr. 1st, 1994


    OCR Scan     		PDF KM68257C 32Kx8 28-SOJ-300 28-TSOP1-0813

    KM62256CLP-7

    Abstract: No abstract text available
    Text: KM62256C CMOS SRAM ELECTRONICS 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 um CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CMOS process technology. The family


    OCR Scan     		PDF KM62256C 32Kx8 28-DIP, 28-SOP, 28-TSOP KM62256CL KM62256CL- KM62256C KM62256CLP-7

    AS71

    Abstract: No abstract text available
    Text: LH52256AS PIN CONNECTIONS FEATURES • 32,768 x CMOS 256K 32K x 8 Static RAM 8 bit organization TO P VIEW 28-PIN SOP • Access time: 500 ns (MAX.) Z' 28 Ai2 C 2 27 □ WE 7 C 3 26 Zl A,3 Aß [Z 4 25 Z3 Ag a 18 mW (tRc, twc = 1 M-S (TYP.) Standby: 72 (MAX.)


    OCR Scan     		PDF LH52256AS 28-PIN 28-pin, 450-mil 2256A LH52256AS AS71

    KM62V256CLE

    Abstract: No abstract text available
    Text: KM62V256C, KM62U256C Family CMOS SRAM 32Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 uM CMOS • Organization : 32K x 8 • Power Supply Voltage KM62V256C family : 3.3V +/- 0.3V KM62U256C family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM62V256C, KM62U256C 32Kx8 KM62V256C 28-SOP, 28-TSOP KM62V256CLE

    Untitled

    Abstract: No abstract text available
    Text: KM68257E, KM68257EI PRELIMINARY CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev.No. History Rev. 0.0 Initial D raft Draft Data A ug. 1 .1 9 9 8 Remark


    OCR Scan     		PDF KM68257E, KM68257EI 32Kx8 28-SOJ-300 28-TSOP1

    LH64400CK-70

    Abstract: lh61664 LH62800K-60 LH64400 lh64260 LH64400CK-60 20DIP LH62800 LH61664N LH61664 K-70
    Text: MEMORIES Dynamic RAMs ★ U n d e r d e v e lo p m e n t C apacity Configuration Model No. Mode A ccess tim e ns 50 256k 256k x 1 Page mode LH21256 256kx4 Fast page mode LH64256B 6 4 k x 16 Fast page mode LH61664 256kx8 Fast page mode LH62800 Fast page mode


    OCR Scan     		PDF LH21256 256kx4 LH64256B LH61664 256kx8 LH62800 LH64400C LH64405 LH64260 LH6S4260 LH64400CK-70 lh61664 LH62800K-60 LH64400 lh64260 LH64400CK-60 20DIP LH62800 LH61664N LH61664 K-70

    km62256clg-7

    Abstract: 62256CL-L
    Text: KM62256C Family CMOS SRAM 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 uM CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CM O S process technology. The family


    OCR Scan     		PDF KM62256C 32Kx8 28-DIP, 28-SOP, 28-TSOP KM62256CL KM62256CL-L km62256clg-7 62256CL-L