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    Untitled

    Abstract: No abstract text available
    Text: AMIC TECHNOLOGY Taiwan , INC. Spec. No. : 04-83-002 Update : 12/17/1999 Pages : 1 of 9 TAPE&REEL PACKING SPECIFICAITON 1. Packing Procedures 2. Carrier Tape Dimensions - 28SOP,26/28SOJ,28TSOP,32sTSOP 3. Carrier Tape Dimensions - 32/40/44SOP,32/40SOJ,32/44/50TSOP,100QFP


    Original     		PDF 28SOP 26/28SOJ 28TSOP 32sTSOP 32/40/44SOP 32/40SOJ 32/44/50TSOP 100QFP 36/48Mini-BGA

    K6F2008S2E

    Abstract: K6F2008S2E-F
    Text: K6F2008S2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F2008S2E 256Kx8 K6F2008S2E-F

    Untitled

    Abstract: No abstract text available
    Text: HY62KF08401C Series 512Kx8bit full CMOS SRAM Document Title 512K x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Mar.21.2001 Final 01 Changed Isb1 values Jun.07.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility


    Original     		PDF HY62KF08401C 512Kx8bit HY62KF08401C

    K6F1008U2C

    Abstract: K6F1008U2C-YF70
    Text: K6F1008U2C Family CMOS SRAM Document Title 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial Draft May 17, 2001 Preliminary 1.0 Finalized September 25, 2001 Final Revision No. The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and


    Original     		PDF K6F1008U2C 128Kx8 K6F1008U2C-YF70

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6200L08 Ultra Low Power 256k x 8 CMOS SRAM Aug 2001 Rev. 1.2 Features : Description : ∗ The GLT6200L08 is a low power CMOS Static RAM organized as 262,144 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


    Original     		PDF GLT6200L08 GLT6200L08 32-sTSOP. 48Ball 36TYP 75TYP

    K6F2008U2E

    Abstract: K6F2008U2E-EF55 K6F2008U2E-EF70 K6F2008U2E-YF55 K6F2008U2E-YF70 1024 256x8 SRAM
    Text: K6F2008U2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final 2.0 Revise


    Original     		PDF K6F2008U2E 256Kx8 55/Typ. 35/Typ. K6F2008U2E-EF55 K6F2008U2E-EF70 K6F2008U2E-YF55 K6F2008U2E-YF70 1024 256x8 SRAM

    KM68FR1000AFI-10

    Abstract: KM68FR1000AFI-7 KM68FR1000ATGI-10 KM68FR1000ATGI-7
    Text: Advance KM68FR1000A Family CMOS SRAM Document Title 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Draft Data Remark Design target November 3, 1998 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and


    Original     		PDF KM68FR1000A 128Kx8 fabr75) KM68FR1000AFI-10 KM68FR1000AFI-7 KM68FR1000ATGI-10 KM68FR1000ATGI-7

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM K6X4008T1F Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Data Remark July 29, 2002 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6X4008T1F 512Kx8

    KM68V512ALTE-10L

    Abstract: 64Kx8 CMOS RAM KM68U512ALE-L
    Text: KM68V512A, KM68U512A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17, 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.


    Original     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-sTSOP KM68V512ALTE-10L 64Kx8 CMOS RAM KM68U512ALE-L

    CS18LV

    Abstract: 8X13 CS18LV10245 CS18LV10245CC CS18LV10245CI CS18LV10245DC CS18LV10245DI CS18LV10245EC CS18LV10245EI CS18LV10245LC
    Text: High Speed Super Low Power SRAM CS18LV10245 128K-Word By 8 Bit „ DESCRIPTION The CS18LV10245 is a high performance, high speed and super low power CMOS Static Random Access Memory organized as 131,072 words by 8bits and operates from a wide range of 4.5 to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high


    Original     		PDF CS18LV10245 128K-Word CS18LV10245 55/70ns 32-pin CS18LV 8X13 CS18LV10245CC CS18LV10245CI CS18LV10245DC CS18LV10245DI CS18LV10245EC CS18LV10245EI CS18LV10245LC

    K6F1008V2C-LF55

    Abstract: K6F1008V2C-LF70 K6F1008V2C K6F1008V2C-F K6F1008V2C-YF55 K6F1008V2C-YF70 32-STSOP1
    Text: K6F1008V2C Family CMOS SRAM Document Title 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft November 27, 2001 Preliminary 0.1 Revise - Changed Package Type : 48 36 -TBGA-6.00x7.00 to 32-TSOP1-0813.4F


    Original     		PDF K6F1008V2C 128Kx8 32-TSOP1-0813 K6F1008V2C-LF55 K6F1008V2C-LF70 K6F1008V2C-F K6F1008V2C-YF55 K6F1008V2C-YF70 32-STSOP1

    TSOPI

    Abstract: No abstract text available
    Text: HY62V8200B Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is


    Original     		PDF HY62V8200B 256Kx8bit 32-sTSOPI-8X13 32-TSOPI -8X20 32pin TSOPI

    Untitled

    Abstract: No abstract text available
    Text: Advance information June 2000 AS6UA5128 1.65V to 3.6V 512Kx8 Intelliwatt low-power CMOS SRAM with one chip enable • Low power consumption: STANDBY Features • AS6UA5128 • Intelliwatt active power circuitry • Industrial and commercial temperature ranges available


    Original     		PDF AS6UA5128

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    KM68S2000LT-12L

    Abstract: KM68S2000LT-15L
    Text: KM68S2000 Family Preliminary CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Draft Date Remark Initial draft September 30, 1997 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF KM68S2000 256Kx8 256Kx8 KM68S2000LT-12L KM68S2000LT-15L

    KM68U512ALE-L

    Abstract: KM68V512ALTE-10L KM68V512ALE-L 85FV 32-STSOP
    Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.6pm CMOS • Organization : 64Kx8 • Power Supply Voltage KM60V512A family : 3.3VKJ.3V KM68U512A family : 3.0V±0.3V


    OCR Scan     		PDF KM68V512A, KM68U512A 64Kx8 64Kx8 KM60V512A 32-SOP-525, 32-T30P1-0820F, 32-TSOP1-Q813 KM68V512A KM68U512ALE-L KM68V512ALTE-10L KM68V512ALE-L 85FV 32-STSOP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM68V1000E, KM68U1000E Family Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Révision History Revision No. 0.0 History Design target Draft Data Remark Septem ber 9, 1998 Prelim inary The attached datasheets are provided by SAM SU N G Electronics. SAM SU N G Electronics CO., LTD. reserves the right to change the specifications and


    OCR Scan     		PDF KM68V1000E, KM68U1000E 128Kx8 1000E 525mil)

    Z3CS

    Abstract: 32TSOP
    Text: KM68V1000C, KM68U1000C Family CMOS SRAM 128K x8 bit Low Power and Low voltage CMOS static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 >m CMOS • Organization: 128KX8 • Power Supply Voltage : KM68V1000C fam ily: 3.3VK3.3V KM68U1OOOC family : 3.0V±0.3V


    OCR Scan     		PDF KM68V1000C, KM68U1000C 128KX8 KM68V1000C KM68U1OOOC 32-SOP-525, 32-TSOP1-0820F/R, 32-TSOP1-OB13 KM68U1Q00C Z3CS 32TSOP

    ELL04

    Abstract: No abstract text available
    Text: Advance K M 6 8 V 5 1 2 B , K M 6 8 U 5 1 2 B Fami l y D o c u m e n t CMOS SRAM liti 64Kx8 bit Low Power and Low Voltage C M O S Static RAM R evisio n No. H is to ry D raft Data D esign ta rg e t N o ve m b e r 25th 1997 Remark A dvance T h e attached da ta she ets are prepared and a p p ro ve d by S A M S U N G E lectronics. S A M S U N G E lectro nics C O ., LTD. re se rve the


    OCR Scan     		PDF 64Kx8 68V512B ELL04

    Untitled

    Abstract: No abstract text available
    Text: K M 6 8 V 2 0 0 0 , K M 6 8 U 2 0 0 0 Fami l y CM OS SRAM Dacuro ent T\t\ 2 56 Kx 8 bit Low Power and Low Voltage C M O S Static RAM R e v is io n N o . H is to ry D raft D ata R em ark 0.0 Design target January 30th 1997 Advance 0.1 Initial draft April 7th 1997


    OCR Scan     		PDF KM68V2000 70/85ns KM68V2000I, 68U2000, KM68U2000I 85/100ns 0820F)

    KM68U4000CL-L

    Abstract: 3A3103
    Text: Advance KM68V4000C, KM68U4000C Family CMOS SRAM 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.35|jm CMOS • Organization : 512Kx8 • Power Supply Voltage KM68V4000C Family : 3.3±Q.3V KM68U4000C Family : 3.0±0.3V


    OCR Scan     		PDF KM68V4000C, KM68U4000C 512Kx8 512Kx8 KM68V4000C 32-SOP-S25, 32-TSDP2-400F/R 32-TSOP1-OB13 KM68U4000CL-L 3A3103

    1S08S

    Abstract: No abstract text available
    Text: KM68FV1000, KM68FS1000, KM68FR1Q00 Family CMOS SRAM 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4nm Full CMOS • Organization : 128Kx8 bit > Power Supply Voltage KM 68FV1000 Fam ily. 3.0V - 3.6V


    OCR Scan     		PDF KM68FV1000, KM68FS1000, KM68FR1Q00 128Kx8 68FV1000 68FS1000 68FR1000 32-SOP-525, 32-TSO P1-0820F, 1S08S

    2183A

    Abstract: No abstract text available
    Text: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V


    OCR Scan     		PDF KM68V1000C, KM68U1000C 128Kx8 KM68V1000C 32-SOP, 32-TSOP 32-sTSOP 2183A

    marking TACS

    Abstract: No abstract text available
    Text: H Y 6 2V 8 20 0B S eries 256K x 8 b it CMOS SRAM DESCRIPTION FEATURES The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is


    OCR Scan     		PDF HY62V8200B 32-STSOPI-8X13 32-TSOPI -8X20 HY62V8200B marking TACS