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    28N12 Search Results

    28N12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SiT1602BC-12-28N-12.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BC-71-28N-12.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BI-73-28N-12.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT9365AC-1E1-28N122.880000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SiT9365AC-2B1-28N122.880000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SF Impression Pixel

    28N12 Price and Stock

    Orient Display Ltd AFL240320A0-2.8N12NTM-ANO

    GRAPHIC DISPLAY TFT RGB 2.8"
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    DigiKey AFL240320A0-2.8N12NTM-ANO Box 17 1
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    Panasonic Electronic Components EXB-28N121JX

    RES ARRAY 2 RES 120 OHM 0804 HF
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    DigiKey EXB-28N121JX Reel 20,000
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    Avnet Americas EXB-28N121JX Reel 18 Weeks 10,000
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    Mouser Electronics EXB-28N121JX
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    Master Electronics EXB-28N121JX
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    Amphenol Aerospace MS17347R28N12S

    RECEPT
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    DigiKey MS17347R28N12S Bulk 2
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    Newark MS17347R28N12S Bulk 1
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    Amphenol Aerospace MS17348R28N12S

    RECEPT
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    DigiKey MS17348R28N12S Bulk 2
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    Newark MS17348R28N12S Bulk 1
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    SiTime Corporation SIT1602BI-33-28N-12.000000

    MEMS OSC XO 12.0000MHZ H/LV-CMOS
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    DigiKey SIT1602BI-33-28N-12.000000 1
    • 1 $1.18
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    28N12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    igbt induction cooker

    Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B
    Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


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    PDF 28N120B IC110 O-268 O-247 728B1 123B1 728B1 065B1 28N120B igbt induction cooker induction cooker application notes siemens igbt IXGH 28N120B

    IXGQ28N120B

    Abstract: 28N120 induction cooker application notes IXGQ28N120BD1
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


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    PDF 28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1 IXGQ28N120B 28N120 induction cooker application notes IXGQ28N120BD1

    igbt induction cooker

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


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    PDF 28N120BD1 IC110 O-268 0-12A/DSEC 0-12A igbt induction cooker

    IXGH 28N120BD1

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


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    PDF 28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) 405B2 IXGH 28N120BD1

    28N120

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


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    PDF 28N120B IC110 O-268 O-247 28N120

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


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    PDF 28N120B IC110 O-268 O-247

    IXGH 28N120BD1

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


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    PDF 28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH 28N120BD1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


    Original
    PDF 28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


    Original
    PDF 28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247)

    28N120

    Abstract: igbt induction cooker Siemens induction cooker IXGP28N120B igbt for induction heating ic induction cooker induction cooker application notes induction heating ic 28N12 C27056
    Text: High Voltage IGBT IXGP 28N120B VCES = 1200 V = 50 A IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


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    PDF 28N120B IC110 O-220 28N120B 28N120 igbt induction cooker Siemens induction cooker IXGP28N120B igbt for induction heating ic induction cooker induction cooker application notes induction heating ic 28N12 C27056

    IXGH 28N120BD1

    Abstract: igbt induction cooker 28N120
    Text: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


    Original
    PDF 28N120BD1 IXGH 28N120BD1 igbt induction cooker 28N120

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


    Original
    PDF 28N120B IC110 O-268 O-247 728B1 123B1 065B1

    28N120B

    Abstract: RG201
    Text: Advanced Technical Data High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


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    PDF 28N120B O-268 O-247 728B1 123B1 065B1 RG201

    27G11

    Abstract: ZCT21P16 21G11 XCK_ 28n12 XCK P XE2N P3151 25P16 Osiconcept P3151
    Text: References continued 5 Limit switches 5 Osiswitch Universal, Osiconcept® Compact design, metal, type XCK D or plastic, types XCK P and XCK T Adaptable sub-assemblies: bodies with contacts 561390 Bodies with contacts, type XCK T plastic, 2 cable entries


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    PDF P3161) P3131) P3141) P3151) 25N12 27N12 28N12 26N12 21N12 27G11 ZCT21P16 21G11 XCK_ 28n12 XCK P XE2N P3151 25P16 Osiconcept P3151