STGB19NC60K
Abstract: STGB19NC60KT4 STGP19NC60K GB19NC60K
Text: STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling
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STGB19NC60K
STGP19NC60K
O-220
STGB19NC60K
STGB19NC60KT4
STGP19NC60K
GB19NC60K
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GP19NC60H
Abstract: GW19NC60H STGP19NC60H STGW19NC60H
Text: STGP19NC60H STGW19NC60H 19 A - 600 V - very fast IGBT Features • Low on-voltage drop VCE(sat ■ High input impedance (voltage driven) Applications ■ High frequency motor control ■ SMPS and PFC in both hard switch and resonant topologies 2 3 3 1 TO-247
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STGP19NC60H
STGW19NC60H
O-247
O-220
GP19NC60H
GW19NC60H
GP19NC60H
GW19NC60H
STGP19NC60H
STGW19NC60H
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M41T81
Abstract: AN1012 M41T81S bmb2 smd M41T813 ABE smd
Text: M41T81 Serial access real-time clock with alarm Not For New Design Features • For new designs use M41T81S ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century ■ 8 32 KHz crystal oscillator integrating load
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M41T81
M41T81S
M41T81S
M41T81
AN1012
bmb2 smd
M41T813
ABE smd
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Untitled
Abstract: No abstract text available
Text: TUSB3410, TUSB3410I USB to Serial Port Controller Data Manual May 2008 Connectivity Interface Solutions SLLS519G IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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TUSB3410,
TUSB3410I
SLLS519G
timeul-2008
TUSB3410IRHBR
TUSB3410RHBR
MTQF002B
S-PQFP-G32)
4040172/D
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Untitled
Abstract: No abstract text available
Text: M41T81 Serial access real-time clock with alarm Datasheet - production data Description 8 1 SO8 8-pin SOIC Features • For all new designs use M41T81S Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century
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M41T81
M41T81S
M41T81S
DocID007529
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NAND16GW3D2A
Abstract: C5761 2112B
Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3D2A
16-Gbit,
4224-byte
NAND16GW3D2A
C5761
2112B
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Untitled
Abstract: No abstract text available
Text: TPD2E001 www.ti.com. SLLS684E – JULY 2006 – REVISED JUNE 2008 LOW-CAPACITANCE 2-CHANNEL ±15-kV ESD-PROTECTION ARRAY
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TPD2E001
SLLS684E
15-kV
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GP19NC60KD
Abstract: GF19NC60KD GF19NC60 GB19NC60KD STGF19NC60KD
Text: STGB19NC60KD, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs
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STGB19NC60KD,
STGF19NC60KD,
STGP19NC60KD
O-220
O-220FP
GB19NC60KD
GF19NC60KD
GP19NC60KD
O-220
GF19NC60
STGF19NC60KD
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A115-A
Abstract: C101 LV595A SN54LV595A SN74LV595A
Text: SN54LV595A, SN74LV595A 8ĆBIT SHIFT REGISTERS WITH 3ĆSTATE OUTPUT REGISTERS SCLS414N − APRIL 1998 − REVISED APRIL 2005 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC QA SER OE RCLK SRCLK SRCLR QH′ QC QD QE QF QG QH 15 2 3 14 4 13 5 12 6 11 7 10 8 9 QD QE
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SN54LV595A,
SN74LV595A
SCLS414N
SN54LV595A
A115-A
C101
LV595A
SN54LV595A
SN74LV595A
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16G nand
Abstract: No abstract text available
Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage
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16-Gbit,
4224-byte
16-Gbit
16G nand
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STM8S205
Abstract: STM8S203 pm0051 4806h 42me pm0044 stm8s203k3 STM8S205xx qfn 5x5 thermal resistance STM8S203F3
Text: STM8S203xx STM8S205xx Performance line, STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, LINUART, USART, SPI, I²C Preliminary Data Features Core • Max fCPU: up to 16 MHz Advanced STM8 core with Harvard architecture and 3-stage pipeline
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STM8S203xx
STM8S205xx
10-bit
LQFP64
10x10
LQFP48
LQFP44
STM8S205
STM8S203
pm0051
4806h
42me
pm0044
stm8s203k3
STM8S205xx
qfn 5x5 thermal resistance
STM8S203F3
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MS 7529
Abstract: block diagram for RF transmitter AND RECEIVER doc AN1012 M41T81 M41T81S AN-1572 bmb2 smd
Text: M41T81 Serial access real-time clock with alarm Not recommended for new design Features • For all new designs other than automotive, use M41T81S contact the ST sales office for automotive grade ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month,
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M41T81
M41T81S
M41T81S
MS 7529
block diagram for RF transmitter AND RECEIVER doc
AN1012
M41T81
AN-1572
bmb2 smd
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BAT46
Abstract: BAT46ZFILM JESD97 STCS2A
Text: STCS2A 2 A max constant current LED driver Features • Up to 40 V input voltage ■ Less than 0.5 V voltage overhead ■ Up to 2 A output current ■ PWM dimming pin ■ Shutdown pin ■ LED disconnection diagnostic ■ Slope control with external cap 10
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PowerSO-10
BAT46
BAT46ZFILM
JESD97
STCS2A
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Untitled
Abstract: No abstract text available
Text: TLC372 LinCMOS DUAL DIFFERENTIAL COMPARATORS SLCS114E − NOVEMBER 1983 − REVISED JULY 2008 D D D D D D D D 1OUT 1IN − 1IN + GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN − 2IN + TLC372M . . . FK PACKAGE TOP VIEW NC 1IN − NC 1IN + NC 4 3 2 1 20 19 18 5 17
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TLC372
SLCS114E
TLC372C,
TLC372I,
TLC372M,
TLC372Q
TLC372M
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ISO7231
Abstract: ISO7230 ISO7230A ISO7230ADW ISO7230ADWR ISO7231A ISO7231ADW
Text: ISO7230A ISO7231A www.ti.com . SLLS906 – MAY 2008 One Megabit per Second Triple Digital Isolators
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ISO7230A
ISO7231A
SLLS906
25-Year
SLLA197
4000-Vpeak
560-Vpeak
ISO7231
ISO7230
ISO7230A
ISO7230ADW
ISO7230ADWR
ISO7231A
ISO7231ADW
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NAND16GW3D2A
Abstract: NAND32GW3D4A
Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage
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16-Gbit,
4224-byte
NAND16GW3D2A
NAND32GW3D4A
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GP19NC60H
Abstract: GW19NC60H STGP19NC60H STGW19NC60H
Text: STGB19NC60H, STGP19NC60H STGW19NC60H 19 A - 600 V - very fast IGBT Features • Low on-voltage drop VCE(sat ■ High frequency operation Applications 2 3 1 TO-247 ■ High frequency motor drives ■ SMPS and PFC in both hard switch and resonant topologies
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STGB19NC60H,
STGP19NC60H
STGW19NC60H
O-247
O-220
STGB19NC60HT4
GB19NC60H
GP19NC60H
GP19NC60H
GW19NC60H
STGP19NC60H
STGW19NC60H
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NAND16GW3D2A
Abstract: NAND32GW3D4A NAND08GW3D2A
Text: NAND08GW3D2A NAND16GW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area
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NAND08GW3D2A
NAND16GW3D2A
16-Gbit,
4224-byte
16-Gbi"
NAND16GW3D2A
NAND32GW3D4A
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glucose meter application note
Abstract: TPD2E001DZDR TPD2E001 TPD2E001DRLR TPD2E001DRSR TPD2E001DRYR TPD2E001YFPR TPD3E001 TPD4E001 TPD6E001
Text: TPD2E001 www.ti.com. SLLS684E – JULY 2006 – REVISED JUNE 2008 LOW-CAPACITANCE 2-CHANNEL ±15-kV ESD-PROTECTION ARRAY
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TPD2E001
SLLS684E
15-kV
TPD3E001,
glucose meter application note
TPD2E001DZDR
TPD2E001
TPD2E001DRLR
TPD2E001DRSR
TPD2E001DRYR
TPD2E001YFPR
TPD3E001
TPD4E001
TPD6E001
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TPD2E001
Abstract: TPD2E001DRLR TPD2E001DRSR TPD2E001DRYR TPD2E001DZDR TPD2E001YFPR TPD3E001 TPD4E001 TPD6E001
Text: TPD2E001 www.ti.com. SLLS684E – JULY 2006 – REVISED JUNE 2008 LOW-CAPACITANCE 2-CHANNEL ±15-kV ESD-PROTECTION ARRAY
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TPD2E001
SLLS684E
15-kV
TPD3E001,
TPD2E001
TPD2E001DRLR
TPD2E001DRSR
TPD2E001DRYR
TPD2E001DZDR
TPD2E001YFPR
TPD3E001
TPD4E001
TPD6E001
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STM8S205C6
Abstract: COSMIC STM8S205 STM8S20
Text: STM8S203xx STM8S205xx Performance line, STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, LINUART, USART, SPI, I²C Preliminary Data Features Core • Max fCPU: up to 16 MHz Advanced STM8 core with Harvard architecture and 3-stage pipeline
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STM8S203xx
STM8S205xx
10-bit
LQFP64
10x10
LQFP48
LQFP44
LQFP32
TSSOP20
STM8S205C6
COSMIC
STM8S205
STM8S20
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Untitled
Abstract: No abstract text available
Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Kbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3D2A
16-Gbit,
4224-byte
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Untitled
Abstract: No abstract text available
Text: 5 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED ALL C O P Y R IG H T - BY T O O E LE C T R O N IC S FO R 4 3 2 P U B L IC A T IO N R IG H T S R E V IS IO N S RESERVED. AA C O R P O R A TIO N . 00 D E S C R IP T IO N R1 REV PER E C R —0 8 —0 1 3 4 8 6
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28MAY2008
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Untitled
Abstract: No abstract text available
Text: 2 T H I S DRAWING I S UNPUBLI SHED. COPYRI GHT 20 RELEASED FOR PUB L I C A T I O N 20 LOC BY TYCO ELECTRONI CS CORPORATI ON. ALL R 1GHTS RESERVED. REV 1SIONS DI ST 00 GP P LTR C C1 D AMP" T RADEMARK, PART NUMBER, DESCRI PTI ON REV PER ECR-07-012702 REVISED
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ECR-07-012702
ECR-08-013257
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