mxic
Abstract: PM-0254
Text: IUDCIC MX28F41QO 4M -BIT [51S K X 8 CMOS FLASH MEMORY FEATURES • 524,288x8/262,144x16 switchable • Fast access lime: 120/150/200ns • Low power consumption - 50mA maximum active current - 100nAmaximum standby current • Programming and erasing voltage 12V ± 5%
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288x8/262
144x16
120/150/200ns
100nAmaximum
MX28F41QO
100mA
44-pin
48-pin
X28F4100
-1-A17
mxic
PM-0254
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Untitled
Abstract: No abstract text available
Text: MXIC ip ^ iy Ë a iM Â i^ Y M X 2 8 F2 1 OOT 2 M - B I T 2 5 6 K x 8 / 1 2 8 K x 1 6 C M O S FLASH M E M O R Y FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current
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MX28F21
144x8/131
072x16
70/90/120ns
100nAmaximum
16K-Byte
96K-Byte
128K-Byte
MX28FS100T
MX28F21OOT
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h5ra
Abstract: NTE 5432
Text: IV IX 2 S F 2 1 O O B 2M BIT[256K x 8 / 1 28K x 1 6} CMOS FLASH MEMORY FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current Programming and erasing voltage 12V ± 7%
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144x8/131
072x16
70/90/120ns
100nAmaximum
16K-Byte
96K-Byte
128K-Byte
100mA
Q0-Q15
XX90H
h5ra
NTE 5432
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PM-0254
Abstract: MXIc MX28F4100 Q0-Q15
Text: JFL 1MACRONIX. V I OO 4M-BIT 51 2K x 8} CMOS FLASH MEMORY FEATURES • 524,288x8/262,144x16 switchable • Fast access time: 120/150/200ns
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MX28F41OO
288x8/262
144x16
120/150/200ns
50fis
100mA
techno94
Q15/A-1
Q13ZZ
MX28F4100
PM-0254
MXIc
Q0-Q15
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