D1028UK
Abstract: siemens plc 300w rf amplifier uhf EXE18 Storm Products T21N coaxial plc cable EXE18 19/30 S1TW coaxial cable "storm products"
Text: TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1028UK
175MHz
D1028UK
siemens plc
300w rf amplifier uhf
EXE18
Storm Products
T21N
coaxial plc cable
EXE18 19/30 S1TW coaxial cable
"storm products"
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kf 8715
Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI
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HFA3101
10GHz
HFA3101
10GHz)
390nH
825MHz
900MHz
75MHz
76MHz
kf 8715
fiber optic FM Modulator
gilbert cell sum
RF TRANSISTOR 10GHZ
FM Modulator 2GHz
rf digital modulators ic
50E08
stub tuner matching
500E
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J315
Abstract: J425 MS1578 J1225
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1578 RF & MICROWAVE TRANSISTORS 800-960MHz CELLULAR BASE STATION Features • • • • • • • • • GOLD METALLIZATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED
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MS1578
800-960MHz
-28dBc
MS1578
MSC0890
J315
J425
J1225
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atc100a
Abstract: JL 1500 3.6v 9901v Philips capacitor 116 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 TDMA POWER 5509
Text: Philips Semiconductors 1880 MHz PA Driver with BFG21W 1880 MHz PA Driver with BFG21W Application Note JL-9901v0 Author Jarek Lucek April 9, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications in
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BFG21W
JL-9901v0
BFG21W,
BFG21W
24dBm,
7E-12
99E-13
atc100a
JL 1500 3.6v
9901v
Philips capacitor 116
RF NPN POWER TRANSISTOR C 10-12 GHZ
PMBT3904
TDMA POWER 5509
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qualcomm msm 8660
Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
Text: 1 2 3 4 5 6 7 ! " 8 # 9 !
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RF2043
RF2044
RF2045
RF2046
RF2047
RF2048
RF2103P
org/jedec/download/std020
qualcomm msm 8660
ecu repair
proton rx 4000 watts power amplifier circuit diagram
preamplifier proton 1100
MOBILE jammer GSM 1800 MHZ circuit diagram
Qualcomm 8200
proton rx 3000
RF2713
433MHz saw Based Transmitter Schematic and PCB La
RF2517
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E4440A
Abstract: high power amplifier pallet 6674A E4418B IFR3414 WCDMA
Text: GaN-SiC Pallet Amplifier RTP09425-10 Product Features Application • Doherty amplifier design • GaN on SiC HEMT • Small and light weight • 50 Ohm Input/Output impedance matched • Highly reliable and rugged design • High efficiency, High Gain • 25W typical PAVG
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RTP09425-10
RTP09425-10
925MHz
960MHz,
30VDC,
E4440A
high power amplifier pallet
6674A
E4418B
IFR3414
WCDMA
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Untitled
Abstract: No abstract text available
Text: TetraFET D1028UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D1028UK
175MHz
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HFA3101
Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
Text: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while
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HFA3101
HFA3101
10GHz)
RF NPN POWER TRANSISTOR C 10-12 GHZ
920mhz
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8593E
Abstract: AN0001 AN1892 RF2422
Text: AN0001 15 AN0001 Optimization of Quadrature Modulator Performance Optimization of Quadrature Modulator Performance Introduction Quadrature modulators are common building blocks in a communications link. By their nature they are capable of sending virtually any modulation scheme. They can send both analog, such as AM and FM, and digital modulation schemes,
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AN0001
RF2422.
RF2422
AN1892,
8593E
AN0001
AN1892
RF2422
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064R
Abstract: D1027UK coaxial storm products
Text: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1027UK
175MHz
EXE18
064R
D1027UK
coaxial storm products
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k 3918 TRANSISTOR
Abstract: pin diagram of bf 494 transistor 7497 spice smd transistor 501 smd transistors 458 transistor 381 7943 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 09 18 140 9622
Text: Philips Semiconductors 800MHz PA Driver with BFG21W 800MHz PA Driver with BFG21W Application Note JL-9803v2 Author Jarek Lucek November 8, 1998 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver
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800MHz
BFG21W
JL-9803v2
BFG21W,
BFG21W
800MHz,
25dBm,
k 3918 TRANSISTOR
pin diagram of bf 494 transistor
7497 spice
smd transistor 501
smd transistors 458
transistor 381 7943
RF NPN POWER TRANSISTOR C 10-12 GHZ
PMBT3904
09 18 140 9622
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SL-6020 The SL-6020 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power
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SL-6020
SL-6020
SL-60201
SL-60202
SL-60201
SL-60202
SL60201
SL60202
EDS-100943
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Harris HFA3101 5 GHz Gilbert cell array
Abstract: Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B HFA3101 reactance modulator HFA3101B96
Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array August 1996 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI
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HFA3101
10GHz
HFA3101
10GHz)
Harris HFA3101 5 GHz Gilbert cell array
Array chip resistors
fiber optic FM Modulator
FM Modulator 2GHz
500E
800E
H3101B
reactance modulator
HFA3101B96
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Untitled
Abstract: No abstract text available
Text: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1027UK
175MHz
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TIM1213-30L
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1213-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 12.7GHz to 13.2GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB=5.5dB at 12.7GHz to 13.2GHz LOW INTERMODULATION DISTORTION
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TIM1213-30L
-28dBc
7-AA03A)
TIM1213-30L
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Untitled
Abstract: No abstract text available
Text: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system
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PH1617-60
-28dBc
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Untitled
Abstract: No abstract text available
Text: TetraFET D1027UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D1027UK
175MHz
EXE18
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POWER 28V 3A 60W
Abstract: SL-6020 SL-60201 SL-60202 J351
Text: Advance Data Sheet Product Description SL-6020 The SL-6020 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power
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SL-6020
SL-6020
SL-60202
SL-60201
POWER 28V 3A 60W
SL-60201
SL-60202
J351
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433MHZ amplifier 1w
Abstract: rfc 433mhz circuit RF POWER TRANSISTOR IS-54 MAX2601 MAX2601ESA MAX2602 MAX2602ESA RF transistors with s-parameters
Text: 19-1185; Rev 3; 9/08 KIT ATION EVALU LE B A IL A AV 3.6V, 1W RF Power Transistors for 900MHz Applications The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion
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900MHz
MAX2601/MAX2602
IS-54)
29dBm
-28dBc
MAX2601
MAX2602
MAX2601/MAX2602
433MHZ amplifier 1w
rfc 433mhz circuit
RF POWER TRANSISTOR
IS-54
MAX2601ESA
MAX2602ESA
RF transistors with s-parameters
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8593E
Abstract: amplitude modulator gilbert cell AN0001 SMT03 AN1892 8904A quadrature modulator
Text: AN0001 AN0001 Optimization of Quadrature Modulator Performance Quadrature modulators are common building blocks in a communications link. By their nature they are capable of sending virtually any modulation scheme. They can send both analog, such as AM and FM, and digital modulation schemes,
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AN0001
RF2422.
RF2422
AN1892,
8593E
amplitude modulator gilbert cell
AN0001
SMT03
AN1892
8904A
quadrature modulator
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D1028UK
Abstract: siemens 230 90 064R 300w rf amplifier uhf
Text: TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1028UK
175MHz
D1028UK
siemens 230 90
064R
300w rf amplifier uhf
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3101-B
Abstract: h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12
Text: CSF! H A R R I S W HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array November 1996 Features • Description High Gain Bandwidth Product fT .10GHz • High Power Gain Bandwidth P ro d u c t. 5GHz •
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HFA3101
HFA3101
10GHz)
10GHz
1320nm
3101-B
h3101
Harris HFA3101 5 GHz Gilbert cell array
csf 78-12
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25T26G40
Abstract: No abstract text available
Text: a#Résumai nm niFien 160 School House Road, Souderton. PA 18964-9990 USA TEL 215-723-8181 • FAX 215-723-5688 MODEL 25T26G40 25 WATTS CW 26.5 - 40 GHz The Model 25T26G40 is a self contained, forced air cooled, broadband traveling wave tube TW T microwave am plifier designed for applications where wide instantaneous bandwidth, high gain and
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25T26G40
20dBc
28dBc
WR-28
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Untitled
Abstract: No abstract text available
Text: 19-1185; Rev 2 ; 5/97 3. 6V, 1 W R F P o w e r T r a n s i s t o r s for 900M H z A p p lic a tio n s The MAX2601 is a high-perform ance silicon bipolar RF p o w e r tra n s is to r. T he M A X 2 6 0 2 in c lu d e s a h ig h perform ance silicon bipolar RF power transistor, and a
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MAX2601
MAX2601/MAX2602
MAX2601/MAX2602
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