winbond 25080
Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010
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2732B
27C100
27HB010
27C256
27HC64
27C128
27C040
7128A
winbond 25080
29F200BB
16LF648A
89V51RD2
18f252
89S51
National SEMICONDUCTOR GAL16V8
29sf040
12f675
29F400BB
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AD475
Abstract: 16V8Q 22V10 ATMEL PIC16C782 16v8z pic16f876a Equivalent AD347 AD486 xicor 28C64 82S123 programming
Text: PRODUCT DATA SHEET AD67 479-871 and AD347 / AD475 and AD486 Package Converters for 300 mil body 28 pin SOIC / SOP devices (and smaller parts) with one-to-one wiring Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" AD67 28 28 01 S .6
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AD347
AD475
AD486
AD347
AD475
16V8Q
22V10 ATMEL
PIC16C782
16v8z
pic16f876a Equivalent
AD486
xicor 28C64
82S123 programming
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HM6264 RAM
Abstract: IC114 earom 28c64 ram 93C46 data sheet transistor 2030 IC120 27C2001 IC109 ram hm6264
Text: Technical Note 2030, 2040 and 2050 Series Memory Security This document gives a full description of the types of memory devices contained in the 2030, 2040 and 2050 series signal generator and information on how to clear memory stores for when the instrument is removed from a
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atmel 93c66
Abstract: PH29EE010 2764 EEPROM 537RU10 sst ph29ee010 556RT7A 556RT5 intel 8755 eprom 2716 537RU17
Text: Универсал ьны й програм матор Sterh ST011 Производст во: Россия. Цен а: 17500 руб. с НД С. ST011 имеет всего одну универсальную DIP42 панель для программирования
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ST011
DIP42
DIP42,
RS232
155RE3
556RT4
556RT4A
556RT5
atmel 93c66
PH29EE010
2764 EEPROM
537RU10
sst ph29ee010
556RT7A
intel 8755
eprom 2716
537RU17
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AT28C64
Abstract: AT28C64E AT28C64/X
Text: AT28C64/X Features • • • • • • • • • • Fast Read Access Time - 120 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control
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AT28C64/X
AT28C64
AT28C64E
AT28C64/X
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AT28C64
Abstract: AT28C64-12 28C64 15pc 28P6 AT28C64E 28c64 ram AT28C64-15 28C64 AT28C64-20 AT28C64-25
Text: AT28C64/X Features • • • • • • • • • • Fast Read Access Time - 120 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control
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AT28C64/X
AT28C64
AT28C64-12
28C64 15pc
28P6
AT28C64E
28c64 ram
AT28C64-15
28C64
AT28C64-20
AT28C64-25
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28C64
Abstract: STK10C68 STK11C68 embedded microprocessors eeprom 28c64 low cost eeprom programmer circuit diagram
Text: Common nvSRAM Questions Common nvSRAM Questions Simtek Corporation manufactures a complete family of high speed, high performance nonvolatile Static Random Access Memories nvSRAM . Simtek's entire product line is guaranteed nonvolatile for a minimum of 10 years, without any source of external power, special
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28C64
Abstract: STK10C68 STK11C68 STK14C88 FeRAM eeprom 28c64
Text: nvSRAM Basics Introduction Stores can be initiated in three ways: Hardware STORE, Software STORE, or AutoStore , depending on the family of component selected. Simtek Corporation manufactures a family of high speed, high performance nonvolatile Static Random
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28C64 EEPROM
Abstract: 28C64 MBM28C64-25 MBM28C64 eeprom 28c64 till 111 28C64-25 eeprom 28c64-35 MBM28C64-35 at 28c64s
Text: FUJITSU CMOS 65536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE ROM M BM 28C64-25 M BM 28C64-35 S e p te m b e r T 9 8 7 E d itio n 2 .0 CMOS 8 1 9 2 x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 28C64 is a high speed 65,536 bits CMOS electrically erasable
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65536-BIT
MBM28C64-25
MBM28C64-35
8192x8
28C64
28C64-25
28C64-35
28C64-
28C64 EEPROM
MBM28C64
eeprom 28c64
till 111
eeprom 28c64-35
MBM28C64-35
at 28c64s
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seeq 28C64
Abstract: 28C64 EEPROM eeprom 28c64 28C64-250 28C64-300 28C64 28C64-350 2SC64 at 28c64s 28C64 military
Text: 28C64 Technology, Incorporated Timer E2 64K Electrically Erasable PROM July 1991 Features Power Up/Down Protection Circuitry • Military, Extended and Commercial Temperature Range • - 5 5 eC to +125°C Operation Military . -40°C to +8S°C Operation (Extended)
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28C64
-55eC
MD400106/A
28C64
MD400106/A
seeq 28C64
28C64 EEPROM
eeprom 28c64
28C64-250
28C64-300
28C64-350
2SC64
at 28c64s
28C64 military
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28C64 EEPROM
Abstract: eeprom 28c64 28C64 plcc 28C64 28c64 ram 3614-1 28C64-15 28C648 DS11108A-1 006042
Text: GENERAL INSTRUMENT ELDMIOÍM^ 28C64 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns ■ High Performance CMOS T echnology fo r Low Power Dissipation — 100 ¿<A Standby — 30 mA Active ■ Fast Byte W rite Tim e — 200 jjs o r 1 ms
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28C64
100aiA
Byte-Wid496-0844;
DS11108A-8
28C64 EEPROM
eeprom 28c64
28C64 plcc
28C64
28c64 ram
3614-1
28C64-15
28C648
DS11108A-1
006042
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M28C64
Abstract: M28C64-W PDIP28 PLCC32 S028
Text: SGS-THOMSON iyiEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION
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M28C64
120ns
M28C64-xxW
M28C64
M28C64-W
TSOP28
TSOP28
PDIP28
PLCC32
S028
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26c64
Abstract: 28C64 EEPROM 28C64 plcc eeprom 28c64 28C64I 28c64 ram 28C64 military 28C648 28c64 28c64 833
Text: 3890002 MICROCHIP TECHNOLOGY GENL INC GENERAL INSTRUMENT IN S T R / S3 D 28C64 MICROCHIP 83D blG3201 03404 0003404 2 PlRELOIMfllMAIRV DM FO M ATO O IM 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns ■ High Performance CMOS Technology for Low
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blG3201
28C64
DS11108A-8
26c64
28C64 EEPROM
28C64 plcc
eeprom 28c64
28C64I
28c64 ram
28C64 military
28C648
28c64
28c64 833
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M28C64
Abstract: M28C64-W PDIP28 PLCC32 S028
Text: SGS-THOMSON iyitEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION
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M28C64
120ns
M28C64-xxW
PDIP28
PLCC32
TSOP28
TSOP28
M28C64
M28C64-W
PDIP28
PLCC32
S028
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41C256
41C257
41C258
41C464
41C466
41C1000
44C256
44C258
44C1002
TC51257
fujitsu 814100
TC 55464 toshiba
HN62304
hn623257
658128
816b
hn62324
M7202A
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28C64 EEPROM
Abstract: pd28c64 nec 28C64 27c eeprom
Text: m JUPD28C64 8192 X 8-Bit CMOS EEPROM e NEC Electronics Inc. Description Pin Configuration The^PD28C64 is a 65,536-bit electrically erasable and programmable read-only memory EEPROM orga nized as 8,192 x 8 bits and fabricated with an advanced CMOS process for high performance and tow power
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uPD28C64
PD28C64
536-bit
/jPD28C64
32-byte
28-pin
/JPD28C64
28C64 EEPROM
nec 28C64
27c eeprom
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Untitled
Abstract: No abstract text available
Text: MICROCHIP TECHNOLOGY INC SHE D b l G 3 2 G l GGGM7Sti 5 • "F4U 3-27 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70,90,120,150,200, 250ns Access Time • CMOS Technology for Low Power Dissipation
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28C64B
250ns
64-Byte
DS11120A-7
blQ3E01
28C64B_
28C64B-
DS11120A-8
120ns
150ns
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DS60037
Abstract: 28C64B-25 28C64B M/28C64B
Text: 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70, 90,120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active - 150nA Standby • Fast Write Cycle Times - 64-Byte Page Write Operation
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28C64B
28C64B
DS11120A-7
120ns
150ns
200ns
250ns
DS60037
28C64B-25
M/28C64B
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26c64
Abstract: 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64
Text: 28C64B M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 7 0 ,90 ,1 2 0 ,1 50 ,2 0 0 , 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active • 150|iA Standby • Fast Write Cycle Times
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28C64B
250ns
64-Byte
DS11120A-7
bl03S01
28C64B_
T-46-13-27
28C64B-
120ns
150ns
26c64
26C64B
28C64B
28C64B-25
28C64B-70
28C64
28C64B-12
28C64B-90
28C64B EEPROM
*26C64
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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416C256
14800A
14900A
514170B
514280B
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
HN624017FB
K93C46
93cs46n
MB832001
hn62308
41C1000
93C46LN
41464
hn623257
HM63832
DT71256
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Untitled
Abstract: No abstract text available
Text: AT28C64/X Features • Fast Read Access Time -120 ns • Fast Byte Write - 200 us or 1 ms • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Di rect Microprocessor Control READY/BUSY Open Drain Output
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AT28C64/X
AT28C64
Electric5962-87514
Military/883C
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Untitled
Abstract: No abstract text available
Text: ASAHI KASEI MICROSYSTEMS M D=Ja3b3S 0000113 T H A S H I 45E D AIC2 TC64 S e rie s T - 64Kbit Electrically Erasable PROM Preliminary FEATURES •8192 word x 8 bit Configuration ■Single +5 Volt Operation ■On-Chip Latches for Direct Microprocessor Interface
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64Kbit
AK28C64F
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Untitled
Abstract: No abstract text available
Text: AT28C64/X Features • • • • • • • • • • Fast Read Access Time -120 ns Fast Byte Write - 200 |js or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control
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AT28C64/X
AT28C64
AT28C64X
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B-057
Abstract: No abstract text available
Text: AT28C64/X Features • • • • • • • • • • Fast Read Access Time -120 ns Fast Byte Write - 200 |is or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control
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AT28C64/X
AT28C64
Electrica50
AT28C64X
B-057
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