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    28C64 RAM Search Results

    28C64 RAM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MSP430F2101IDGVR Texas Instruments 16-bit Ultra-Low-Power Microcontroller, 1kB Flash, 128B RAM, Comparator 20-TVSOP -40 to 85 Visit Texas Instruments Buy
    MSP430F2121IDGV Texas Instruments 16-bit Ultra-Low-Power Microcontroller, 4kB Flash, 256B RAM, Comparator 20-TVSOP -40 to 85 Visit Texas Instruments Buy
    TPS3619-50DGK Texas Instruments Backup-Battery Supervisors for RAM Retention 8-VSSOP -40 to 85 Visit Texas Instruments Buy
    TPS3620-50DGKR Texas Instruments Battery-Backup Supervisors for RAM Retention 8-VSSOP -40 to 85 Visit Texas Instruments Buy
    MSP430F1101AIDGV Texas Instruments 16-bit Ultra-Low-Power Microcontroller, 1kB Flash, 128B RAM, Comparator 20-TVSOP -40 to 85 Visit Texas Instruments Buy
    MSP430F2101IDGV Texas Instruments 16-bit Ultra-Low-Power Microcontroller, 1kB Flash, 128B RAM, Comparator 20-TVSOP -40 to 85 Visit Texas Instruments Buy

    28C64 RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    winbond 25080

    Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
    Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010


    Original     		PDF 2732B 27C100 27HB010 27C256 27HC64 27C128 27C040 7128A winbond 25080 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB

    AD475

    Abstract: 16V8Q 22V10 ATMEL PIC16C782 16v8z pic16f876a Equivalent AD347 AD486 xicor 28C64 82S123 programming
    Text: PRODUCT DATA SHEET AD67 479-871 and AD347 / AD475 and AD486 Package Converters for 300 mil body 28 pin SOIC / SOP devices (and smaller parts) with one-to-one wiring Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" AD67 28 28 01 S .6


    Original     		PDF AD347 AD475 AD486 AD347 AD475 16V8Q 22V10 ATMEL PIC16C782 16v8z pic16f876a Equivalent AD486 xicor 28C64 82S123 programming

    HM6264 RAM

    Abstract: IC114 earom 28c64 ram 93C46 data sheet transistor 2030 IC120 27C2001 IC109 ram hm6264
    Text: Technical Note 2030, 2040 and 2050 Series Memory Security This document gives a full description of the types of memory devices contained in the 2030, 2040 and 2050 series signal generator and information on how to clear memory stores for when the instrument is removed from a


    Original     		PDF

    atmel 93c66

    Abstract: PH29EE010 2764 EEPROM 537RU10 sst ph29ee010 556RT7A 556RT5 intel 8755 eprom 2716 537RU17
    Text: Универсал ьны й програм матор Sterh ST­011 Производст во: Россия. Цен а: 17500 руб. с НД С. ST­011 имеет всего одну универсальную DIP­42 панель для программирования


    Original     		PDF ST011 DIP42 DIP42, RS232 155RE3 556RT4 556RT4A 556RT5 atmel 93c66 PH29EE010 2764 EEPROM 537RU10 sst ph29ee010 556RT7A intel 8755 eprom 2716 537RU17

    AT28C64

    Abstract: AT28C64E AT28C64/X
    Text: AT28C64/X Features • • • • • • • • • • Fast Read Access Time - 120 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control


    Original     		PDF AT28C64/X AT28C64 AT28C64E AT28C64/X

    AT28C64

    Abstract: AT28C64-12 28C64 15pc 28P6 AT28C64E 28c64 ram AT28C64-15 28C64 AT28C64-20 AT28C64-25
    Text: AT28C64/X Features • • • • • • • • • • Fast Read Access Time - 120 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control


    Original     		PDF AT28C64/X AT28C64 AT28C64-12 28C64 15pc 28P6 AT28C64E 28c64 ram AT28C64-15 28C64 AT28C64-20 AT28C64-25

    28C64

    Abstract: STK10C68 STK11C68 embedded microprocessors eeprom 28c64 low cost eeprom programmer circuit diagram
    Text: Common nvSRAM Questions Common nvSRAM Questions Simtek Corporation manufactures a complete family of high speed, high performance nonvolatile Static Random Access Memories nvSRAM . Simtek's entire product line is guaranteed nonvolatile for a minimum of 10 years, without any source of external power, special


    Original     		PDF

    28C64

    Abstract: STK10C68 STK11C68 STK14C88 FeRAM eeprom 28c64
    Text: nvSRAM Basics Introduction Stores can be initiated in three ways: Hardware STORE, Software STORE, or AutoStore , depending on the family of component selected. Simtek Corporation manufactures a family of high speed, high performance nonvolatile Static Random


    Original     		PDF

    28C64 EEPROM

    Abstract: 28C64 MBM28C64-25 MBM28C64 eeprom 28c64 till 111 28C64-25 eeprom 28c64-35 MBM28C64-35 at 28c64s
    Text: FUJITSU CMOS 65536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE ROM M BM 28C64-25 M BM 28C64-35 S e p te m b e r T 9 8 7 E d itio n 2 .0 CMOS 8 1 9 2 x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 28C64 is a high speed 65,536 bits CMOS electrically erasable


    OCR Scan     		PDF 65536-BIT MBM28C64-25 MBM28C64-35 8192x8 28C64 28C64-25 28C64-35 28C64- 28C64 EEPROM MBM28C64 eeprom 28c64 till 111 eeprom 28c64-35 MBM28C64-35 at 28c64s

    seeq 28C64

    Abstract: 28C64 EEPROM eeprom 28c64 28C64-250 28C64-300 28C64 28C64-350 2SC64 at 28c64s 28C64 military
    Text: 28C64 Technology, Incorporated Timer E2 64K Electrically Erasable PROM July 1991 Features Power Up/Down Protection Circuitry • Military, Extended and Commercial Temperature Range • - 5 5 eC to +125°C Operation Military . -40°C to +8S°C Operation (Extended)


    OCR Scan     		PDF 28C64 -55eC MD400106/A 28C64 MD400106/A seeq 28C64 28C64 EEPROM eeprom 28c64 28C64-250 28C64-300 28C64-350 2SC64 at 28c64s 28C64 military

    28C64 EEPROM

    Abstract: eeprom 28c64 28C64 plcc 28C64 28c64 ram 3614-1 28C64-15 28C648 DS11108A-1 006042
    Text: GENERAL INSTRUMENT ELDMIOÍM^ 28C64 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns ■ High Performance CMOS T echnology fo r Low Power Dissipation — 100 ¿<A Standby — 30 mA Active ■ Fast Byte W rite Tim e — 200 jjs o r 1 ms


    OCR Scan     		PDF 28C64 100aiA Byte-Wid496-0844; DS11108A-8 28C64 EEPROM eeprom 28c64 28C64 plcc 28C64 28c64 ram 3614-1 28C64-15 28C648 DS11108A-1 006042

    M28C64

    Abstract: M28C64-W PDIP28 PLCC32 S028
    Text: SGS-THOMSON iyiEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION


    OCR Scan     		PDF M28C64 120ns M28C64-xxW M28C64 M28C64-W TSOP28 TSOP28 PDIP28 PLCC32 S028

    26c64

    Abstract: 28C64 EEPROM 28C64 plcc eeprom 28c64 28C64I 28c64 ram 28C64 military 28C648 28c64 28c64 833
    Text: 3890002 MICROCHIP TECHNOLOGY GENL INC GENERAL INSTRUMENT IN S T R / S3 D 28C64 MICROCHIP 83D blG3201 03404 0003404 2 PlRELOIMfllMAIRV DM FO M ATO O IM 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns ■ High Performance CMOS Technology for Low


    OCR Scan     		PDF blG3201 28C64 DS11108A-8 26c64 28C64 EEPROM 28C64 plcc eeprom 28c64 28C64I 28c64 ram 28C64 military 28C648 28c64 28c64 833

    M28C64

    Abstract: M28C64-W PDIP28 PLCC32 S028
    Text: SGS-THOMSON iyitEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION


    OCR Scan     		PDF M28C64 120ns M28C64-xxW PDIP28 PLCC32 TSOP28 TSOP28 M28C64 M28C64-W PDIP28 PLCC32 S028

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    28C64 EEPROM

    Abstract: pd28c64 nec 28C64 27c eeprom
    Text: m JUPD28C64 8192 X 8-Bit CMOS EEPROM e NEC Electronics Inc. Description Pin Configuration The^PD28C64 is a 65,536-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 8,192 x 8 bits and fabricated with an advanced CMOS process for high performance and tow power


    OCR Scan     		PDF uPD28C64 PD28C64 536-bit /jPD28C64 32-byte 28-pin /JPD28C64 28C64 EEPROM nec 28C64 27c eeprom

    Untitled

    Abstract: No abstract text available
    Text: MICROCHIP TECHNOLOGY INC SHE D b l G 3 2 G l GGGM7Sti 5 • "F4U 3-27 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70,90,120,150,200, 250ns Access Time • CMOS Technology for Low Power Dissipation


    OCR Scan     		PDF 28C64B 250ns 64-Byte DS11120A-7 blQ3E01 28C64B_ 28C64B- DS11120A-8 120ns 150ns

    DS60037

    Abstract: 28C64B-25 28C64B M/28C64B
    Text: 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70, 90,120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active - 150nA Standby • Fast Write Cycle Times - 64-Byte Page Write Operation


    OCR Scan     		PDF 28C64B 28C64B DS11120A-7 120ns 150ns 200ns 250ns DS60037 28C64B-25 M/28C64B

    26c64

    Abstract: 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64
    Text: 28C64B M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 7 0 ,90 ,1 2 0 ,1 50 ,2 0 0 , 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active • 150|iA Standby • Fast Write Cycle Times


    OCR Scan     		PDF 28C64B 250ns 64-Byte DS11120A-7 bl03S01 28C64B_ T-46-13-27 28C64B- 120ns 150ns 26c64 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    Untitled

    Abstract: No abstract text available
    Text: AT28C64/X Features • Fast Read Access Time -120 ns • Fast Byte Write - 200 us or 1 ms • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Di rect Microprocessor Control READY/BUSY Open Drain Output


    OCR Scan     		PDF AT28C64/X AT28C64 Electric5962-87514 Military/883C

    Untitled

    Abstract: No abstract text available
    Text: ASAHI KASEI MICROSYSTEMS M D=Ja3b3S 0000113 T H A S H I 45E D AIC2 TC64 S e rie s T - 64Kbit Electrically Erasable PROM Preliminary FEATURES •8192 word x 8 bit Configuration ■Single +5 Volt Operation ■On-Chip Latches for Direct Microprocessor Interface


    OCR Scan     		PDF 64Kbit AK28C64F

    Untitled

    Abstract: No abstract text available
    Text: AT28C64/X Features • • • • • • • • • • Fast Read Access Time -120 ns Fast Byte Write - 200 |js or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control


    OCR Scan     		PDF AT28C64/X AT28C64 AT28C64X

    B-057

    Abstract: No abstract text available
    Text: AT28C64/X Features • • • • • • • • • • Fast Read Access Time -120 ns Fast Byte Write - 200 |is or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control


    OCR Scan     		PDF AT28C64/X AT28C64 Electrica50 AT28C64X B-057