Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 28N30B IXGT 28N30B VCES IC25 VCE sat typ tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 56 A IC90
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28N30B
28N30B
O-247
O-268
O-268
O-268AA
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28N30
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 56 A = 1.6 V = 180 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient
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28N30
O-268
O-247
O-268AA
28N30
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PDF
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752 smd
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 28N30A IXGT 28N30A VCES = = IC25 VCE sat typ = tfi(typ) = 300 56 1.85 120 V A V ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES
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28N30A
O-247
O-268
O-268AA
752 smd
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PDF
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28N30
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = = = = 300 V 56 A 1.6 V 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous
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Original
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28N30
28N30
O-268
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 28N30A IXGT 28N30A VCES = IC25 = VCE sat typ = = tfi(typ) 300 56 1.85 120 V A V ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES
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28N30A
28N30A
O-247
O-268AA
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PDF
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12n60c
Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM
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O-220
O-263
O-247
PLUS247
O-268
ISOPLUS247TM
O-264
20N30
28N30
30N30
12n60c
60n60 igbt
diode b242
31N60
ixgk50n60bu1
50n60bd1
Diode 12 b2
120n60
60N60
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 56 A = 1.6 V = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V
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Original
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28N30
28N30
O-268
O-247
O-268AA
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PDF
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ad 161
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 28N30B IXGT 28N30B VCES IC25 VCE sat typ tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 56 A IC90
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28N30B
O-268
O-247
O-268AA
ad 161
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PDF
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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Original
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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PDF
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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PDF
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Untitled
Abstract: No abstract text available
Text: ÖIXYS HiPerFAST IGBT IXGH 28N30B IXGT 28N30B 300 56 2.1 55 V CES ^C25 V CE sat typ t fi(typ) V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 300 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 300 V v GES Continuous
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OCR Scan
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28N30B
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PDF
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28N30
Abstract: No abstract text available
Text: r i T v v < v HiPerFAST IGBT VCES IXGH 28N30 IXGT 28N30 ^C25 V CE sat typ ^fi(typ) 300 V 56 A 1.6 V 180 ns Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 300 V V CGR T j = 25°C to 150°C; RGE = 1 MQ 300 V v GES
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OCR Scan
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28N30
28N30
O-268
O-268
O-247
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PDF
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7N60B
Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28
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OCR Scan
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30N30
28N30
4QN30
31N60
38N60
41N60
60N60
200N60
25N100A
7N60B
65A3
40N60A
IXGA 12N60C
200n60
ixgh 1500
IXG IGBT
ixgh
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PDF
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28N30B
Abstract: No abstract text available
Text: DIXYS IXGH 28N30B IXGT 28N30B HIPerFAST IGBT VCES ^C25 V CE sat typ trfi(typ,i /K • Symbol ~ 300 56 2.1 55 V A V ns TO-247 AD Test Conditions : 25° C to 150=C V CES v OCR T, V Continuous =2 5 ° C to 150°C; R . 1 MO (TAB) Transient T c = 2 5 °C ^C90
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OCR Scan
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28N30B
28N30B
O-247
O-268
O-268
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PDF
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28n30a
Abstract: No abstract text available
Text: niXYS HIPerFAST“ IGBT IXGH 28N30A IXGT 28N30A CES ^C25 V CE sat typ t fi(typ) 300 56 1.85 120 V A V ns P re lim in a ry data sh ee t i f Maximum Ratings Symbol Test Conditions V CES T, =25°C to 150°C 300 V Tj = 25° C to 150° C; RGE= 1 M£i 300 V V GES
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OCR Scan
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28N30A
28N30A
O-247
O-268
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PDF
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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OCR Scan
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O-220
O-263
O-247
28N30
30N30
40N30
2N100
8N100
6N100
12N10Q
120n60b
40N30BD1
32N50
7n60c
20N60BU1
40N60A
B-2160
200n60
12n60c
IXGH24N50B
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PDF
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Untitled
Abstract: No abstract text available
Text: H flHVwÎ Y A- Y ^JL sIk»!? HiPerFAST IGBT IXGH 28N30B IXGT 28N30B V CES 300 56 2.1 55 ^C25 V CE sat typ t'fi(typ) V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j = 25°C to 150°C 300 V V CGR T j = 25°C to 150°C; RGE = 1 MQ
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OCR Scan
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28N30B
28N30B
O-247
O-268
Applica193
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PDF
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Untitled
Abstract: No abstract text available
Text: ÖIXYS HiPerFAST IGBT VCES IXGH 28N30 IXGT 28N30 ^C25 V CE sat typ tfi(ty p ) 300 V 56 A 1.6 V 180 ns Preliminary data sheet Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 300 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 300 V v GES Continuous
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OCR Scan
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28N30
O-268
O-247
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PDF
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HM5118165J6
Abstract: No abstract text available
Text: HM5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26,1996 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The H M 5118165 offers
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OCR Scan
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HM5118165
1048576-word
16-bit
ADE-203-636B
576-word
16-bit.
42-pin
50-pin
ns/60
HM5118165J6
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PDF
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ajw smd
Abstract: SMD ajw
Text: □ IXYS PRELIMINARY DATA SHEET 28N30 28N30S HiPerFAST IGBT Symbol Test C onditions V CES Td = 25°C to 150°C V CGR « M aximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v Transient ±30 V GEM ^C25 Tc = 25°C
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OCR Scan
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IXGH28N30
IXGH28N30S
13/10Nm/lb
O-247
Conditi47
ajw smd
SMD ajw
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PDF
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Untitled
Abstract: No abstract text available
Text: OIXYS PRELIMINARY DATA SHEET 28N30A 28N30AS HiPerFAST IGBT \ CES IC25 * CE sat typ. W) Symbol Test Conditions VCES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V *C25 Tc = 25° C
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OCR Scan
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IXGH28N30A
IXGH28N30AS
O-247
28N30AS)
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PDF
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SMD ajw
Abstract: ajw smd ajw 35
Text: □ IXYS PRELIM IN ARY DATA SHEET 28N30A 28N30AS HiPerFAST IGBT Symbol Test Conditions V CES Td = 25°C to 150°C V CGR « Maximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C
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OCR Scan
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IXGH28N30A
IXGH28N30AS
13/10Nm/lb
O-247
SMD ajw
ajw smd
ajw 35
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PDF
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Untitled
Abstract: No abstract text available
Text: OIXYS PRELIMINARY DATA SHEET 28N30 28N30S HiPerFAST IGBT vCES ^C25 v* CE sat typ ^fi(typ) Symbol Test Conditions v CES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V VGES Continuous ±20 V VœM Transient ±30 V Tc = 25° C
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OCR Scan
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IXGH28N30
IXGH28N30S
TQ-247
28N30S)
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: O IX Y S PRELIMINARY DATA SHEET 28N30B 28N30BS HiPerFAST IGBT vCES ^C25 vCE sat typ *fl(typ) Symbol Test Conditions V CES T j = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V Tc = 25° C
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OCR Scan
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IXGH28N30B
IXGH28N30BS
O-247
28N30BS)
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PDF
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