Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    28N120BD1 Search Results

    SF Impression Pixel

    28N120BD1 Price and Stock

    IXYS Corporation IXGQ28N120BD1

    IGBT 1200V 50A 250W TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGQ28N120BD1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IXYS Corporation IXGH28N120BD1

    IGBT 1200V 50A 250W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH28N120BD1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IXYS Corporation IXGT28N120BD1

    IGBT PT 1200V 50A TO268AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGT28N120BD1 Box
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    28N120BD1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXGQ28N120B

    Abstract: 28N120 induction cooker application notes IXGQ28N120BD1
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


    Original
    PDF 28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1 IXGQ28N120B 28N120 induction cooker application notes IXGQ28N120BD1

    igbt induction cooker

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original
    PDF 28N120BD1 IC110 O-268 0-12A/DSEC 0-12A igbt induction cooker

    IXGH 28N120BD1

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


    Original
    PDF 28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) 405B2 IXGH 28N120BD1

    IXGH 28N120BD1

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original
    PDF 28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH 28N120BD1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


    Original
    PDF 28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


    Original
    PDF 28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247)

    IXGH 28N120BD1

    Abstract: igbt induction cooker 28N120
    Text: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


    Original
    PDF 28N120BD1 IXGH 28N120BD1 igbt induction cooker 28N120

    28N120

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original
    PDF 28N120B IC110 O-268 O-247 28N120

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original
    PDF 28N120B IC110 O-268 O-247