tyco 350218-1
Abstract: CTLB084620-003
Text: 110-213 Qualification Test Report 28Aug07 Rev A All Paragraphs Revised Universal MATE-N-LOK* Connector 1. INTRODUCTION 1.1. Purpose Testing was performed on Universal MATE-N-LOK* connectors to determine their conformance to the requirements of Product Specification 108-1031 Revision J.
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28Aug07
15Sep76
12Jan77.
29May
04Jun07.
tyco 350218-1
CTLB084620-003
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Untitled
Abstract: No abstract text available
Text: Not recommended for new designs, use VS-FA72SA50LC VS-FA57SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 57 A FEATURES • • • • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating
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VS-FA72SA50LC
VS-FA57SA50LCP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-UFB130FA60 UFB120FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape
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VS-UFB130FA60
UFB120FA60P
OT-227
OT-227
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: UFB120FA40P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage
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UFB120FA40P
OT-227
OT-227
E78996
2002/95/EC
UFB120FA40P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance
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FB180SA10P
OT-227
2002/95/EC
OT-227electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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VS-GB75DA120UP
Abstract: No abstract text available
Text: Not recommended for new designs, use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy
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VS-GB90DA120U
VS-GB75DA120UP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
VS-GB75DA120UP
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VS-GB100DA60UP
Abstract: No abstract text available
Text: VS-GB100DA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft
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VS-GB100DA60UP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GB100DA60UP
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Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-HFA90FA120 HFA80FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 80 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal
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VS-HFA90FA120
HFA80FA120P
E78996
2002/95/EC
OT-227
HFA80FA120P)
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-UFB230FA60 UFB200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape
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VS-UFB230FA60
UFB200FA60P
OT-227
OT-227
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: HFA120FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 120 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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HFA120FA120P
E78996
2002/95/EC
OT-227
HFA120FA120P)
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-UFB80FA40 UFB60FA40P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape
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VS-UFB80FA40
UFB60FA40P
OT-227
OT-227
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Not recommended for new designs, use VS-FA40SA50LC VS-FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated
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VS-FA40SA50LC
VS-FA38SA50LCP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available
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VS-GA250SA60S
VS-GA200SA60SP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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GB75DA120UP
OT-227
E78996
2002/95/EC
OT-22trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: HFA60FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 60 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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HFA60FA120P
E78996
OT-227
2002/95/EC
HFA60FA120P)
OT-227
11-Mar-11
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application notes igbt induction heating
Abstract: VS-GA100NA60UP
Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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VS-GA100NA60UP
E78996
2002/95/EC
OT-227
11-Mar-11
application notes igbt induction heating
VS-GA100NA60UP
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UFB200FA
Abstract: No abstract text available
Text: UFB200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage
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UFB200FA60P
OT-227
OT-227
E78996
2002/95/EC
UFB200FA60P
11-Mar-11
UFB200FA
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ufb200fa20p
Abstract: UFB200FA
Text: UFB200FA20P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 240 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage
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UFB200FA20P
OT-227
OT-227
E78996
2002/95/EC
UFB200FA20P
11-Mar-11
UFB200FA
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Untitled
Abstract: No abstract text available
Text: FC40SA50FKP Vishay Semiconductors Power MOSFET, 40 A FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current SOT-227
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FC40SA50FKP
OT-227
2002/95/EC
11-Mar-11
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GB100DA60UP
Abstract: No abstract text available
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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GB100DA60UP
OT-227
E78996
2002/95/EC
11-Mar-11
GB100DA60UP
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Untitled
Abstract: No abstract text available
Text: UFB60FA20P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage
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UFB60FA20P
OT-227
OT-227
E78996
2002/95/EC
UFB60FA20P
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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FB180SA10P
Abstract: No abstract text available
Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance
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FB180SA10P
OT-227
2002/95/EC
OT-227
11-Mar-11
FB180SA10P
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1114A
Abstract: GB50LA120UX
Text: GB50LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Ultrafast IGBT , 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227
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GB50LA120UX
OT-227
E78996
2002/95/EC
11-Mar-11
1114A
GB50LA120UX
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GT100DA120U
Abstract: No abstract text available
Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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GT100DA120U
OT-227
E78996
2002/95/EC
11-Mar-11
GT100DA120U
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