Untitled
Abstract: No abstract text available
Text: MB2M, MB4M & MB6M Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers Case Style MBM ~ Major Ratings and Characteristics IF AV 0.5 A VRRM 200 V, 400 V, 600 V IFSM 35 A IR 5 µA VF 1.0 V Tj max. 150 °C ~ ~ ~ Features Mechanical Data
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E54214
UL-94V-0
J-STD-002B
JESD22-B102D
08-Apr-05
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Si1032R
Abstract: No abstract text available
Text: SPICE Device Model Si1032R Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1032R
18-Jul-08
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Si1012R
Abstract: No abstract text available
Text: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1012R
S-51298Rev.
27-Jul-05
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SOT-563 SOT-666
Abstract: marking 802 soic8 sot-563 MOSFET D1 20l sot-23 siliconix MARKING CODE mSOp-8 siliconix code marking to-220 marking code 20L sot-23 sot23 V30114-T1
Text: Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES D D D D D D D BENEFITS Very Small Footprint High-Side Switching Low On-Resistance: 0.7 W
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Si1024X
OT-563
SC-89
SC70-6L
SC89-6L
Specification--PACK-0007-9
T-05206,
AN826
SC-89:
20-Jun-03
SOT-563 SOT-666
marking 802 soic8
sot-563 MOSFET D1
20l sot-23
siliconix MARKING CODE mSOp-8
siliconix code marking to-220
marking code 20L sot-23 sot23
V30114-T1
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Untitled
Abstract: No abstract text available
Text: MB2M, MB4M & MB6M Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers Case Style MBM ~ Major Ratings and Characteristics IF AV 0.5 A VRRM 200 V, 400 V, 600 V IFSM 35 A IR 5 µA VF 1.0 V Tj max. 150 °C ~ ~ ~ Features Mechanical Data
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Original
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PDF
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E54214
UL-94V-0
J-STD-002B
JESD22-B102D
27-Jul-05
50mVp-p
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Untitled
Abstract: No abstract text available
Text: FX5545G018ADJ Vishay Low Profile 3mm DC/DC Buck Converter 0.9V to 1.3V, 3A with 111W/in3 Power Density Efficiency up to 95% FEATURES • • • • • • • • • • • • • • • • • The DC/DC converter is a programmable topology synchronized Buck converter for today’s continuous
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FX5545G018ADJ
11W/in3
FX5545G305
11W/inch3
6063B
4815A
27-Jul-05
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Si7606DN
Abstract: No abstract text available
Text: SPICE Device Model Si7606DN Vishay Siliconix N-Channel 125-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7606DN
18-Jul-08
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Si1032X
Abstract: 51416R
Text: SPICE Device Model Si1032X Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1032X
18-Jul-08
51416R
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Si1413EDH
Abstract: No abstract text available
Text: SPICE Device Model Si1413EDH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1413EDH
S-51305Rev.
27-Jul-05
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SI1024X
Abstract: No abstract text available
Text: SPICE Device Model Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1024X
18-Jul-08
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Si4483EDY
Abstract: No abstract text available
Text: SPICE Device Model Si4483EDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4483EDY
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si7901EDN Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.048 @ VGS = –4.5 V –6.3 0.068 @ VGS = –2.5 V –5.3 0.090 @ VGS = –1.8 V –4.6 • TrenchFET Power MOSFETS: 1.8-V Rated
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Si7901EDN
07-mm
Si7901EDN-T1
08-Apr-05
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S-51305
Abstract: Si1413EDH
Text: SPICE Device Model Si1413EDH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1413EDH
18-Jul-08
S-51305
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7309DN Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7309DN
18-Jul-08
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Si1032R
Abstract: No abstract text available
Text: SPICE Device Model Si1032R Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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Si1032R
S-51299Rev.
27-Jul-05
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Si7309
Abstract: Si7309dn
Text: SPICE Device Model Si7309DN Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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Si7309DN
S-51296Rev.
27-Jul-05
Si7309
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Si1012R
Abstract: No abstract text available
Text: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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Si1012R
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: MB2M, MB4M & MB6M Vishay Semiconductors Miniature Glass Passivated Single-Phase Bridge Rectifiers Case Style MBM ~ Major Ratings and Characteristics IF AV 0.5 A VRRM 200 V, 400 V, 600 V IFSM 35 A IR 5 µA VF 1.0 V Tj max. 150 °C ~ ~ ~ Features Mechanical Data
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Original
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PDF
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E54214
UL-94V-0
J-STD-002B
JESD22-B102D
27-Jul-05
50mVp-p
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E VIS IO N S 00 AD LTR D NNECTOR A AMPLARY LOA CONTAC DESCRIPTION REV PER EC 0 5 1 2 - 0 3 0 3 - 0 5 DATE DWN APVD
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31MAR2000
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11419
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST AD 00 LTR DESCRIPTION E CONTAC D 2 .0 i- =i— i- z a b 1 p p K 2 p p K 3 p p K T T T 4 p p K T 5 p p K 6
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31MAR2000
11419
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC D IS T AD 00 R E VIS IO N S LTR D CONTAC CONNECTOR ASS MPLARY LOA DESCRIPTION REV PER EC 0 5 1 2 - 0 3 0 3 - 0 5 DATE DWN
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31MAR2000
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GR-1217-CORE
Abstract: 108-19082
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 B CONTAC DESCRIPTION LTR MENSIONS DATE REVISED PER ECN 0 5 1 2 - 0 3 0 4 - 0 5 DWN APVD JDP GES I 5JU N 06
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TR-NWT-001217
31MAR2000
27JUL05
GR-1217-CORE
108-19082
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