Untitled
Abstract: No abstract text available
Text: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.046 ID (A) per leg 8 Configuration Dual PowerPAK
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SQJ960EP
AEC-Q101
SQJ960EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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si8812
Abstract: si88 AGS3
Text: New Product Si8812DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A)a 0.059 at VGS = 4.5 V 3.2 0.061 at VGS = 3.7 V 3.1 0.065 at VGS = 2.5 V 3.0 0.085 at VGS = 1.8 V 2.7 • • • • • Qg (Typ.)
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Original
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Si8812DB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si8812
si88
AGS3
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ962EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualified • 100 % Rg and UIS Tested 60 RDS(on) () at VGS = 10 V 0.060 RDS(on) () at VGS = 4.5 V
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Original
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SQJ962EP
AEC-Q101
SQJ962EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SQJ848AEP
Abstract: No abstract text available
Text: SQJ848AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V 0.0076 RDS(on) () at VGS = 4.5 V 0.0086 ID (A)
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Original
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SQJ848AEP
AEC-Q101
SQJ848AEP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SQJ848AEP
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PDF
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SiSA18DN
Abstract: No abstract text available
Text: New Product SiSA18DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
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SiSA18DN
SiSA18DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SQJ410EP-T1-GE3
Abstract: No abstract text available
Text: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ410EP
AEC-Q101
SQJ410EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SQJ410EP-T1-GE3
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ465EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)
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Original
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SQJ465EP
AEC-Q101
2002/95/EC
SQJ465EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ488EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V 0.0210 RDS(on) () at VGS = 4.5 V 0.0258 ID (A) • AEC-Q101 Qualifiedd
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Original
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SQJ488EP
AEC-Q101
SQJ488EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ912AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0093 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0111
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Original
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SQJ912AEP
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ443EP www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ443EP
AEC-Q101
2011/65/EU
SQJ443EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ962EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ962EP
AEC-Q101
2002/95/EC
SQJ962EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB120SPbF www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum
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Original
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VS-HFA08TB120SPbF
J-STD-020,
AEC-Q101
VS-HFA08TB120S
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ941EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 30 RDS(on) () at VGS = - 10 V 0.024 RDS(on) () at VGS = - 4.5 V 0.039 ID (A) per leg -8 Configuration
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SQJ941EP
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ469EP www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ469EP
AEC-Q101
2002/95/EC
SQJ469EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiJ400DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.004 at VGS = 10 V 32 0.005 at VGS = 4.5 V 32 VDS (V) 30 Qg (Typ.) 45 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21
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SiJ400DP
2002/95/EC
SiJ400DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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tsop31xx
Abstract: No abstract text available
Text: Introduction of New Aether IC and Improved Optical Filter www.vishay.com Vishay Semiconductors Product Change Notification Product Group: Opto Modules & Visibles APPROVAL since 22-AUG-2012 / PCN OMV-599-2012 Rev. TITLE: Introduction of new Aether Ic + improved optical
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22-AUG-2012
OMV-599-2012
27-Aug-12
D-74025
tsop31xx
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PDF
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311E-15
Abstract: 8082 8-PIN
Text: New Product SiZ916DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A)g 0.0064 at VGS = 10 V 16a 0.0100 at VGS = 4.5 V 16a 0.0013 at VGS = 10 V 40a 0.00175 at VGS = 4.5 V
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SiZ916DT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
311E-15
8082 8-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ460EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.0096 RDS(on) () at VGS = 4.5 V 0.0120 ID (A)
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Original
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SQJ460EP
AEC-Q101
2002/95/EC
SQJ460EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see
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Original
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SiR642DP
SiR642DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ850EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.023 RDS(on) (Ω) at VGS = 4.5 V 0.032 ID (A) • TrenchFET Power MOSFET
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Original
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SQJ850EP
AEC-Q101
2002/95/EC
SQJ850EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ848AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V 0.0076 RDS(on) () at VGS = 4.5 V 0.0086 ID (A)
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Original
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SQJ848AEP
AEC-Q101
SQJ848AEP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ412EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0041 RDS(on) () at VGS = 4.5 V 0.0052 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ412EP
AEC-Q101
SQJ412EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQJ461EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQJ461EP
AEC-Q101
2002/95/EC
SQJ461EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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1734279-4
Abstract: 1734279-1 1-1734279-2
Text: THIS DRAWING IS UNPUBLISHED. 1 COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2009 LOC ALL RIGHTS RESERVED. D IS T R E V IS IO N S / DW p LTR B2 DESCRIPTION R E V IS E D E C R — 1 2 - 0 0 6 7 7 1 DATE DWN APVD 27AUG12 JL WK A + CX ? 5
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OCR Scan
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27AUG12
L94V-0;
54//m
l00//'
27/im
31MAR2000
1734279-4
1734279-1
1-1734279-2
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PDF
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