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IXYS Corporation DE275X2-102N06A Mosfet, N Channel, Rf, 16A, 1Kv, 1.18Kw; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:16A; Power Dissipation:1.18Kw; Operating Frequency Min:-; Operating Frequency Max:100Mhz; No. Of Pins:8Pins; Channel Type:N Channel Rohs Compliant: Yes \|Ixys Rf DE275X2-102N06A
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Newark	DE275X2-102N06A	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Knowles Capacitors CSA5275X21X8K61R8J Film Capacitors 61.8PF 100V 5%
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TTI	CSA5275X21X8K61R8J	WAFL	600		1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

275X21 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
275X2-102N06A-00		IXYS-RF	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET 2 N-CHANNEL DE275		Original	PDF

275X21 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Profile 8254 275x21 mm Weight (Kg/mt) Width (mm) Height (mm) RTH (C/W)* *Lenght (mm) 8,7 275 21 0,65 200 PADA ENGINEERING S.r.l. Via G. B. Pirelli, 11 - Saltara (PU) 61030 - Italy Tel. +39 0721 899555 - Fax. +39 0721 897064 - www.padaengineering.com	Original	PDF	275x21
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
DE275X2-102N06A Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet 50W rf power transistor 100MHz RF POWER MOSFET TRANSISTOR 100MHz 102N06A 400P 10-DOF 275X2-102N06A ssd2 Text: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.	Original	PDF	DE275X2-102N06A DE275X2-102N06A 102N06A mosfet pair DE275X2-102N06A 1000 volt mosfet 50W rf power transistor 100MHz RF POWER MOSFET TRANSISTOR 100MHz 400P 10-DOF 275X2-102N06A ssd2
DE275X2-102N06A Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet "RF MOSFETs" 102N06A 400P 275x2-102n06a rf power mosfet MOSFET 50 amp 1000 volt Text: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.	Original	PDF	DE275X2-102N06A DE275X2-102N06A 102N06A mosfet pair DE275X2-102N06A 1000 volt mosfet "RF MOSFETs" 400P 275x2-102n06a rf power mosfet MOSFET 50 amp 1000 volt
Untitled Abstract: No abstract text available Text: RF POWER MOSFET Products Product Line of mom D ire cte d Etiergy, inc. An QIXYS Company DE Series The patented DE-SERIES Fast Power MOSFETs are a new class of unique high power transistors designed as a circuit element from the ground up for high speed, high frequency, high power applications at frequencies up to 100 MHz. DEI's Fast Power™ technology	OCR Scan	PDF	de102N02A 275-102N06A 275X2-102N06A 375-102N12A 475-102N21A 275x2