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    270 PHOTOTRANSISTOR Search Results

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    npn phototransistor

    Abstract: Silicon NPN Phototransistor TEKT5400S 8239 TSKS5400S
    Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm


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    PDF TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 18-Jul-08 npn phototransistor Silicon NPN Phototransistor 8239 TSKS5400S

    TEMT7000X01

    Abstract: J-STD-020D VSMB1940X01 vsmb
    Text: TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity


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    PDF TEMT7000X01 AEC-Q101 VSMB1940X01 J-STD-020 TEMT7000X01 18-Jul-08 J-STD-020D VSMB1940X01 vsmb

    TEMT7100X01

    Abstract: J-STD-020D VSMB1940X01
    Text: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • • • • • • • • • • • 20043-1 DESCRIPTION • TEMT7100X01 is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature,


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    PDF TEMT7100X01 TEMT7100X01 AEC-Q101 VSMB1940X01 J-STD-020 18-Jul-08 J-STD-020D VSMB1940X01

    Untitled

    Abstract: No abstract text available
    Text: TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity


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    PDF TEMT7000X01 AEC-Q101 VSMB1940X01 J-STD-020 TEMT7000X01 18-Jul-08

    VSMB1940X01

    Abstract: No abstract text available
    Text: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • • • • • • • • 20043-1 • • • DESCRIPTION TEMT7100X01 is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature, black 0805 package for surface mounting. Filter bandwidth


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    PDF TEMT7100X01 TEMT7100X01 AEC-Q101 VSMB1940X01 J-STD-020 18-Jul-08 VSMB1940X01

    NPN TEMT7000X01

    Abstract: phototransistor 500-600 nm TEMT7000X01 J-STD-020D VSMB1940X01 radiation sensors
    Text: TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC Q101 Released FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85


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    PDF TEMT7000X01 VSMB1940X01 J-STD-020 TEMT7000X01 18-Jul-08 NPN TEMT7000X01 phototransistor 500-600 nm J-STD-020D VSMB1940X01 radiation sensors

    VSMB1940X01

    Abstract: J-STD-020D 20594 Q-101
    Text: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC Q101 Released FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85


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    PDF TEMT7100X01 VSMB1940X01 J-STD-020 2002/95/EC 2002/96/EC TEMT7100X01 18-Jul-08 VSMB1940X01 J-STD-020D 20594 Q-101

    270 Phototransistor

    Abstract: TEKT5400S TSKS5400S
    Text: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm


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    PDF TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 11-Mar-11 270 Phototransistor TSKS5400S

    PC852XNNSZ0F

    Abstract: pc3hu7xyip PC357NJ0000F
    Text: OPTO • Photocoupler PHOTOCOUPLER LINEUP Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage Low input current AC input response Darlington phototransistor High sensitivity,


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    PDF PC357NJ0000F PC451J00000F PC364NJ0000F PC355NJ0000F PC452J00000F PC367NJ0000F PC354NJ0000F PC365NJ0000F PC925LENSZ0F PC928J00000Fâ PC852XNNSZ0F pc3hu7xyip

    Untitled

    Abstract: No abstract text available
    Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm


    Original
    PDF TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm


    Original
    PDF TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm


    Original
    PDF TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm


    Original
    PDF TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 2002/95/EC. 2011/65/EU. JS709A

    Phototransistors

    Abstract: No abstract text available
    Text: S enso rs Infrared Light Emitting Diodes SIR • SIM — 264 Photointerrupters (RPI • SIU) - 270 Phototransistors Output (Molded Type) Phototransistors (RPM • RPT) - 266 270 Phototransistors Output (Type with case)


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    PDF SIR-33ST Phototransistors

    Untitled

    Abstract: No abstract text available
    Text: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.


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    PDF SL5500 SL5501 SL5511 OT212. MSA048-2

    C1775

    Abstract: DIODE CH71 c1771 C1770 H11DX C2079 C1772 C1774 C2090 H11D1
    Text: GENL INST.Rt OPTOELEK "flfl DE | BÛTDlEfi □□□SÛT3 E | ~ t GENERAL INSTRUMENT PHOTOTRANSISTOR OPTOCOUPLERS P A C K A G E D IM E N S IO N S HI1D1/1Z HI1D2/2Z H11D3/3Z D E S C R IP T IO N r" j 6.86 .270 o WWW 8.89 (.350) 6.35 (.250) t 7.62 (.300) REF


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    PDF T-m-80 3jhi55) C2090 C2079 h11d1/1z h11d3/3z H11DX C1770 C1772 C1774 C1775 DIODE CH71 c1771 C1770 C2079 C1772 C1774 C2090 H11D1

    C1685 transistor

    Abstract: transistor c1684 Cl684 MCT-2201 MCT2200 C1685 C1681 TRANSISTOR C1685 C1285 H127
    Text: GENL INSTR-i OPTOELEK flfl GÉNÉRAL INSTRUMENT DE | 3ÔT015Ô DOOETbT T | ~ VDE APPROVED p h o to tra n sisto r op toco u p le rs DVE PACKAGE DIMENSIONS [& eg] DESCRIPTION Æi r* { 6.86 .270 6.35 (.250) 0.36 (.014) I 0.20 (.008) O WWW T 8.89 (.350) 7.62


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    PDF C2090 C2079 MCT2200/0Z MCT2201/1Z MCT2202/2Z MCT2200, MCT2201 MCT2202 i012fl C1684 C1685 transistor transistor c1684 Cl684 MCT-2201 MCT2200 C1685 C1681 TRANSISTOR C1685 C1285 H127

    C1318 transistor

    Abstract: C1335 transistor transistor C1318 C1317 transistor c1335 c1318 c1316 c1317 C1330 C1251
    Text: GENL INSTRi OP T OE L E K Û6 GENERAL BflTGiafl . 7 . rib rib & ! 6.86 .270 15° M A X 6.35 (.250) 0.36 (.014) —«4 H— I _ 7.62 (.300) REF 8.38 (.330) 2.54{.100)TYP*j 0.20 (.008) I 8.89 (.350) ,- 1.78 (.070) REF / 1.78 (.070) TYP 3.84 (.155) t


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    PDF MCT275 C2090 C2079 MCT275 C1318 c1251 0D02TÃ T-Hh83 C1320 C1318 transistor C1335 transistor transistor C1318 C1317 transistor c1335 c1318 c1316 c1317 C1330 C1251

    C1959

    Abstract: ic 2731 transistor c1959
    Text: 88D 02933 DUALITY TECHNOLOGIES CORP flû DT-ty/-gj> I I 7MbbflSl □ □ □ E c133 □ |jl 1.6 mA DUAL MGL2730 HCPL-2730J 0.5 mA DUAL MCL2731 (HCPL-2731) PACKAGE D IM E N S IO N S & f t i Æ) ifl 6.861-270) 6.35 (.250) 0.36 (.014) \ 0.20 (.008) lo IP t ÿ


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    PDF MGL2730 HCPL-2730J MCL2731 HCPL-2731) MCL/HCPL-2730/31 700nm 74bbflSl C1959 C1600 C1995 C1959 ic 2731 transistor c1959

    MCT2E equivalent

    Abstract: c826 NPN c823 c815 CS15 TRANSISTOR c826 npn D9B diode C818 transistor c815 C2079
    Text: ~ûfl GENL INSTR t OPTOELEK DE 1 30=10150 □ □05'ibl l» T ~ PT"HI'B3 « G E N E R A I! iWRlSMEISTR MCT2E DESCRIPTION PACKAGE DIMENSIONS db f t f t I 6.86 .270 ^ 6.35 (.250) 0.36 (.014) I 0.20 (.008) 7.62 (.300) REF 8.38 (.330) 2Æ4(.100)TYP-*j 15° MAX


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    PDF C2090 C2079 MCT2E equivalent c826 NPN c823 c815 CS15 TRANSISTOR c826 npn D9B diode C818 transistor c815 C2079

    high sensitivity reflective phototransistor

    Abstract: phototransistor visible light ON2270 ONN2270 reflective photo sensor
    Text: Panasonic Reflective Photosensors Photo Reflectors ON2270 Reflective Photosensor U nit : mm • Outline Mark for indicating anode side C0.5 O N N 2 270 is a sm all, th in re fle ctiv e p h o to se n so r c o n sistin g o f a high efficiency G aA s infrared light em itting diode w hich is integrated


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    PDF ON2270 ONN2270 TTI11 high sensitivity reflective phototransistor phototransistor visible light ON2270 reflective photo sensor

    SN72710L

    Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
    Text: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4


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    PDF LH0002C LH0002CN NH0005C DAC08CZ NH0014C DH0034 78M12HC MMH0026CG 79M12AHC 75460BP SN72710L MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm

    cli305 optical switch

    Abstract: No abstract text available
    Text: CLI305 CLI375 CLI325 CLI355 Optical Switches GENERAL DESCRIPTION — The CLI305 CLI375 se­ ries are exceptionally rugged optical switches with Valox housings and an epoxy backfill. The infrared emitting diode and the phototransistor/darlington phototransistor


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    PDF CLI305 CLI375 CLI325 CLI355 CLI305 CLI375 CLI325 CLI55B. cli305 optical switch

    Untitled

    Abstract: No abstract text available
    Text: S ensors Infrared Ught Emitting Diodes SIR * SIM — 264 Phototransistors (RPM • RPT) - 266 PIN Photodiodes (RPM) -267 Photo tCs (RPM) - 267 Photosensitive ICs (RPM) -268


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    PDF SIR-33ST