MJD122
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. R MJD122 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-252 DPAK Pinning .268(6.80) .252(6.40) 1 = Base
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MJD122
O-252
MJD122
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power transistor Ic 4A NPN to - 251
Abstract: MID122
Text: DC COMPONENTS CO., LTD. R MID122 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-251 Pinning .268 6.80 .252(6.40) 1 = Base 2 = Collector
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MID122
O-251
power transistor Ic 4A NPN to - 251
MID122
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40N140
Abstract: 40N160
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C
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40N140
40N160
O-268
IXBH40
40N140
40N160
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IXBH 40N160
Abstract: IXBJ 40N160 40N140 40N160
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C
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40N140
40N160
O-268
IXBH40
IXBH 40N160
IXBJ 40N160
40N140
40N160
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MID117
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. R MID117 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.
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MID117
O-251
-80mA
-40mA
MID117
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power transistor Ic 4A NPN to - 251
Abstract: MID112 VCEO100
Text: DC COMPONENTS CO., LTD. R MID112 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.
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MID112
O-251
power transistor Ic 4A NPN to - 251
MID112
VCEO100
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optocoupler 8 pin configuration
Abstract: 6H13 LH1539AAC LH1539AB 8 pin optocoupler configuration optocoupler darlington output CTR CAPACITOR Ssr optocoupler receptor infrared
Text: LH1539 1 FORM A / PHOTO DARLINGTON FEATURES • Solid state relay and autopolarity optocoupler in one 8-pin package • 3750 VRMS I/O isolation • Surface mountable • Optocoupler — Bidirectional current detection — High CTR: >300% • Solid state relay
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LH1539
LH1539AB)
LH1539AB/AAC
optocoupler 8 pin configuration
6H13
LH1539AAC
LH1539AB
8 pin optocoupler configuration
optocoupler darlington output
CTR CAPACITOR
Ssr optocoupler
receptor infrared
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OPTOCOUPLER dc
Abstract: bidirectional optocoupler LH1525 LH1539AAC LH1539AACTR LH1539AB Ssr optocoupler transistor AC Switch a 3150 OPTOCOUPLER
Text: LH1539AB/AAC/AACTR 1 Form A Photo Darlington Telecomswitch FEATURES • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • I/O Isolation, 5300 VRMS • Surface Mountable • Optocoupler – Bidirectional Current Detection – High CTR: >300%
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LH1539AB/AAC/AACTR
LH1525
17-August-01
OPTOCOUPLER dc
bidirectional optocoupler
LH1539AAC
LH1539AACTR
LH1539AB
Ssr optocoupler
transistor AC Switch
a 3150 OPTOCOUPLER
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A 3150 v opto
Abstract: A 3150 opto LH1525 LH1539AAC LH1539AACTR LH1539AB
Text: LH1539AB/AAC/AACTR 1 Form A Photo Darlington Telecomswitch FEATURES Package Dimensions in Inches mm • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • I/O Isolation, 5300 VRMS • Flammability; UL94,VØ • Surface Mountable • Optocoupler
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LH1539AB/AAC/AACTR
LH1525
1-888-Infineon
A 3150 v opto
A 3150 opto
LH1539AAC
LH1539AACTR
LH1539AB
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MJD117
Abstract: DPAK
Text: DC COMPONENTS CO., LTD. R MJD117 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.
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MJD117
O-252
-80mA
-40mA
MJD117
DPAK
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transistor 2A 3v
Abstract: MJD112
Text: DC COMPONENTS CO., LTD. MJD112 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.
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MJD112
O-252
transistor 2A 3v
MJD112
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LH1525
Abstract: LH1539AAC LH1539AACTR LH1539AB Ssr optocoupler
Text: LH1539AB/AAC/AACTR 1 Form A Photo Darlington Telecomswitch FEATURES Package Dimensions in Inches mm • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • I/O Isolation, 5300 VRMS • Surface Mountable • Optocoupler – Bidirectional Current Detection
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LH1539AB/AAC/AACTR
LH1525
1-888-Infineon
LH1539AAC
LH1539AACTR
LH1539AB
Ssr optocoupler
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Untitled
Abstract: No abstract text available
Text: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection
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LH1539AAC/
LH1525
E52744
D-74025
26-Apr-04
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LH1525
Abstract: LH1539AAC LH1539AACTR LH1539AB smd optocoupler
Text: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection
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LH1539AAC/
LH1525
E52744
D-74025
26-Apr-04
LH1539AAC
LH1539AACTR
LH1539AB
smd optocoupler
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210 optocoupler
Abstract: LH1525 LH1539AAC LH1539AACTR LH1539AB
Text: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection
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LH1539AAC/
LH1525
E52744
18-Jul-08
210 optocoupler
LH1539AAC
LH1539AACTR
LH1539AB
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Untitled
Abstract: No abstract text available
Text: LH1539 SIEMENS 1 FORM A / PHOTO DARLINGTON FEATURES • Solid state relay and autopolarity optocoupler In one 8-pin package • 3750 VRMS I/O isolation • Surface mountable • Optocoupler — Bidirectional current detection — High CTR: >300% • Solid state relay
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LH1539
18-pln
fl535t
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44C6
Abstract: No abstract text available
Text: C JD 122 C JD 127 Central Sem icon du ctor Corp. NPN PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low
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CJD122,
CJD127
CJD122)
CJD127)
44C6
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Untitled
Abstract: No abstract text available
Text: j à s t Æ Ê T * c g iw c ii H»nilr«nfliirffir coro. CJD122 NPN CJD127 PNP flnWlIII^NniVBwWSwl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DftKI!" g8FW DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured
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CJD122
CJD127
CJD122,
CJD122)
10VSlE
CJD127)
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Untitled
Abstract: No abstract text available
Text: Central Semiconductor Corp. CJD112 NPN CJD117 PNP COM PLEM ENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR C JD 112, CJD117 types are Com plementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low
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CJD112
CJD117
750mA,
CJD112)
CJD117)
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transistor RJp 30
Abstract: transistor RJp
Text: cen trai B àtÊÊÈ # CJD112 CÜD117 NPN PNP ÉRtfMMMfclíáMUMfcMfc4Éíifllfl4RdfcUNMHÍ ÉPBtfMMttMh SP^üP*t§R^pïWHWJMyP^EiiCÇPIF lü^BPerjpp* COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon
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CJD112
CJD112,
CJD117
750mA,
CJD112)
CJD117)
transistor RJp 30
transistor RJp
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CJD127
Abstract: CJD122
Text: Central" Semiconductor Corp. CJD122 NPN CJD127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low
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CJD122
CJD127
CJD122,
CJD122)
CJD127)
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cev code
Abstract: CJD112 CJD117
Text: Central CJD112 NPN CJD117 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD 112 , CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low
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CJD112
CJD117
CJD112,
750mA,
CJD112)
CJD117)
00D1740
cev code
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H11K1
Abstract: H11K
Text: Optoisolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, infrared em itting diode coupled with two high voltage silicon Darlingtonconnected phocotransistors which have integral base-emitter resistors
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H11K1,
H11K2
INFRAR000,
H11K1
H11K
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TRANSISTOR JC
Abstract: TRANSISTOR MODULE DUAL DARLINGTON 200 Ampere power transistor KD7212A2 kd7212 isa1200
Text: 7 2 9 4 6 2 1 POWEREX INC ïfl D e J 7E1Mti2Ì 00022b5 <W E H E X 1 D 'T z- 3 3 - 3 S ' KD7212A2 Powerex, Inc., Hillls Street, Ybungwood, Pennsylvania 15697 412 925-7272 D U S l D d r lin C f t O f l Transistor Module 25 Amperes/1200 Volts Description Powerex Dual Darlington Transistor
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72T4fci2Ã
00022b5
KD7212A2
Amperes/1200
KD7212A2
TRANSISTOR JC
TRANSISTOR MODULE DUAL DARLINGTON
200 Ampere power transistor
kd7212
isa1200
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