K9S2808V0C
Abstract: K9S6408V0C K9S5608V0X
Text: K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History Revision No Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing
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K9S5608V0C/B
K9S2808V0C/B
K9S6408V0C/B
K9S2808V0C
K9S6408V0C
K9S5608V0X
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SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)
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KBB0xB400M
16Mx16)
4Mx16)
80-Ball
80x12
SAMSUNG MCP
ECH information
KBB0xB400M
BA102
ba4901
UtRAM Density
BA5101
samsung NAND memory
BGA180
ba30 transistor
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SAMSUNG MCP
Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.
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KBC00B7A0M
16Mx16)
4Mx16)
512Kx16)
100pF
111-Ball
SAMSUNG MCP
MCP MEMORY
dQ8F
SAMSUNG MCP Qualification Report
MCP NAND
SAMSUNG 256Mb mcp Qualification Reliability
SAMSUNG 256Mb NAND Flash Qualification Reliability
UtRAM Density
MCP Samsung
SAMSUNG NOR Flash Qualification Report
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Untitled
Abstract: No abstract text available
Text: Advanced Information SmartMediaTM K9S5608V0A-SSB0 Document Title 32M x 8 Bit SmartMediaTM Card Revision History Revision No 0.0 History Draft Date Remark Initial issue July 17th 2000 Advanced Information Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9S5608V0A-SSB0
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Samsung K9F5608U0D PCB0
Abstract: K9F5608U0D K9F5608U0D-P K9F5608U0D-FCB0 pcb0
Text: K9F5608R0D K9F5608U0D K9F5608D0D FLASH MEMORY K9F5608X0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F5608R0D
K9F5608U0D
K9F5608D0D
K9F5608X0D
Samsung K9F5608U0D PCB0
K9F5608U0D-P
K9F5608U0D-FCB0
pcb0
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Samsung NAND
Abstract: No abstract text available
Text: K9F5608Q0B-DCB0,DIB0 K9F5608U0B-YCB0,YIB0 K9F5608U0B-DCB0,DIB0 K9F5616Q0B-DCB0,DIB0 K9F5616U0B-YCB0,YIB0 K9F5616U0B-DCB0,DIB0 K9F5608U0B-VCB0,VIB0 K9F56XXQ0B:Preliminary K9F5616X0B:Preliminary FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
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K9F5608Q0B-DCB0
K9F5608U0B-YCB0
K9F5608U0B-DCB0
K9F5616Q0B-DCB0
K9F5616U0B-YCB0
K9F5616U0B-DCB0
K9F5608U0B-VCB0
K9F56XXQ0B
K9F5616X0B
Samsung NAND
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Untitled
Abstract: No abstract text available
Text: K9F5608Q0C-DCB0,DIB0 K9F5608U0C-YCB0,YIB0 K9F5608U0C-DCB0,DIB0 K9F5616Q0C-DCB0,DIB0 K9F5616U0C-YCB0,YIB0 K9F5616U0C-DCB0,DIB0 Advance K9F5608U0C-VCB0,VIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History
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K9F5608Q0C-DCB0
K9F5608U0C-YCB0
K9F5608U0C-DCB0
K9F5616Q0C-DCB0
K9F5616U0C-YCB0
K9F5616U0C-DCB0
K9F5608U0C-VCB0
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48-PIN
Abstract: K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0 A9-A24
Text: K9F5608U0A-YCB0,K9F5608U0A-YIB0 FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Draft Date Remark 0.0 Initial issue. July 17th 2000 Advanced Information 0.1 1. Support copy-back program - The copy-back program is configured to quickly and efficiently rewrite
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K9F5608U0A-YCB0
K9F5608U0A-YIB0
48-PIN
1220F
047MAX
K9F5608U0A
K9F5608U0A-YIB0
A9-A24
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K9S5608V0A
Abstract: K9S5608V0A-SSB0 SmartMedia Logical Format
Text: Preliminary SmartMediaTM K9S5608V0A-SSB0 Document Title 32M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue July 17th 2000 Advanced Information 0.1 1. Explain how pointer operation works in detail. Nov. 20th 2000
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K9S5608V0A-SSB0
K9S5608V0A
K9S5608V0A-SSB0
SmartMedia Logical Format
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SAMSUNG MCp
Abstract: samsung NAND FLASH BGA SAMSUNG 128Mb NAND Flash Qualification Reliability
Text: Preliminary MCP MEMORY K5P5781FCM Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. April 18, 2003 Preliminary 0.1 Revised
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K5P5781FCM
16Mx16)
512Kx16)
100pF
10nsCC
69-Ball
SAMSUNG MCp
samsung NAND FLASH BGA
SAMSUNG 128Mb NAND Flash Qualification Reliability
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MCP 67 MV- A2
Abstract: SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density
Text: KAA00B209M-TGxx MCP MEMORY Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/32M Bit(2Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. January 15, 2002 Advance 0.1
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KAA00B209M-TGxx
16Mx16)
Flash/32M
2Mx16)
UtRAM/128M
2Mx16x4Banks)
127-Ball
80x12
08MAX
MCP 67 MV- A2
SAMSUNG MCp
samsung "nor flash" sensing
nand mcp samsung ka
SAMSUNG mcp Reliability spec
Product Selection Guide samsung 2013
MCP NAND, DRAM, NOR
SAMSUNG 256Mb mcp Qualification Reliability
14CLK
UtRAM Density
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SAMSUNG MCP
Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
Text: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6
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KAA00BB07M-DGUV
16Mx16)
4Mx16)
4Mx16x4Banks)
256Mb
137-Ball
80x14
SAMSUNG MCP
KAA00BB07M-DGUV
UtRAM Density
samsung nor nand ddr mcp
nand sdram mcp
M/BVS mcp ohm
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Untitled
Abstract: No abstract text available
Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table
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512Mb/256Mb
K9F1208Q0A-XXB0,
K9F1216Q0A-XXB0
K9F5608Q0C-XXB0,
K9F5616Q0C-XXB0
K9K1208Q0C-XXB0,
K9K1216Q0C-XXB0
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date code body marking samsung
Abstract: No abstract text available
Text: Advanced Information SmartMediaTM K9S5608V0M-SSB0 Document Title 32M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue July 14th 1998 Advanced Information 0.1 1 Changed tR Parameter : 7µs Max.) → 10µs(Max.)
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K9S5608V0M-SSB0
SMFV032
date code body marking samsung
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K9F5608U0A-YCB0
Abstract: No abstract text available
Text: K9F5608U0A-YCB0,K9F5608U0A-YIB0 Preliminary FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark July 17th 2000 Advanced Information 0.0 Initial issue. 0.1 1. Support copy-back program Oct. 4th 2000
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K9F5608U0A-YCB0
K9F5608U0A-YIB0
48-PIN
1220F
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K9F5608U0C-PCB0
Abstract: No abstract text available
Text: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.
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K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F5616Q0C
K9F5616D0C
K9F5616U0C
20mA--
K9F5608U0C-PCB0
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K9F5608U0C-PCB0
Abstract: K9F5608D0C lockpre K9F5608U0C K9F5608Q0C K9F5608Q0C-HCB0 K9F5608U0C-FCB0 K9F5616D0C K9F5616Q0C K9F5616U0C
Text: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.
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K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F5616Q0C
K9F5616D0C
K9F5616U0C
K9F5608U0C-PCB0
K9F5608D0C
lockpre
K9F5608U0C
K9F5608Q0C
K9F5608Q0C-HCB0
K9F5608U0C-FCB0
K9F5616D0C
K9F5616Q0C
K9F5616U0C
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SAMSUNG 256Mb NAND Flash Qualification Reliability
Abstract: K9K5608U0M-YCB0 48-PIN K9F5608U0M
Text: K9K5608U0M-YCB0, K9K5608U0M-YIB0 FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 1. Initial issue Draft Date Remark June 19th 2000 Final - The followings are disprepancy items between K9F5608U0M 256Mb single die and K9K5608U0M (256Mb DDP).
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K9K5608U0M-YCB0,
K9K5608U0M-YIB0
K9F5608U0M
256Mb
K9K5608U0M
256Mb
48-PIN
1220F
SAMSUNG 256Mb NAND Flash Qualification Reliability
K9K5608U0M-YCB0
K9F5608U0M
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48-PIN
Abstract: K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0 48pin TSOP
Text: K9F5608U0A-YCB0,K9F5608U0A-YIB0 FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Initial issue. July 17th 2000 Advanced Information 0.1 1. Support copy-back program - The copy-back program is configured to quickly and efficiently rewrite
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K9F5608U0A-YCB0
K9F5608U0A-YIB0
48-PIN
1220F
047MAX
K9F5608U0A
K9F5608U0A-YIB0
48pin TSOP
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date code body marking samsung
Abstract: K9S5608V0M K9S5608V0M-SSB0 SMFV032 date code marking samsung Nand
Text: SmartMediaTM K9S5608V0M-SSB0 Document Title 32M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue July 14th 1998 Advanced Information 0.1 1. Changed tR Parameter : 7µs Max. → 10µs(Max.) 2. Changed Nop : 10 cycles(Max.) → Main Array 2 cycles(Max.)
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K9S5608V0M-SSB0
SMFV032
15dia
date code body marking samsung
K9S5608V0M
K9S5608V0M-SSB0
date code marking samsung Nand
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date code body marking samsung
Abstract: No abstract text available
Text: SmartMediaTM K9S5608V0M-SSB0 Document Title 32M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue July 14th 1998 Advanced Information 0.1 1. Changed tR Parameter : 7µs Max. → 10µs(Max.) 2. Changed Nop : 10 cycles(Max.) → Main Array 2 cycles(Max.)
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K9S5608V0M-SSB0
SMFV032
15dia
date code body marking samsung
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63 ball fbga
Abstract: No abstract text available
Text: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.
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K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F5616Q0C
K9F5616D0C
K9F5616U0C
20mA--
63 ball fbga
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Untitled
Abstract: No abstract text available
Text: Advanced Information SmartMediaTM SMFV032 Document Title 32M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue July 14th 1998 Advanced Information 0.1 1 Changed tR Parameter : 7µs Max.) → 10µs(Max.) 2) Changed Nop : 10 cycles(Max.) → Main Array 2 cycles(Max.)
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SMFV032
questi25
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Untitled
Abstract: No abstract text available
Text: SmartMediaTM SMFDV032 Document Title 32M x 8 Bit SmartMediaTM Card Revision History Revision No 0.0 0.1 History Draft Date Remark Initial issue 16MB Dual Chip - Compared to SMFV032(32MB Single Chip) 1. Valid block number(Min.) SMFDV032 : 2013 blocks SMFV032 : 2018 blocks
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SMFDV032
SMFV032
SMFV032
SMFV016
SMFDV032
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