16x16 dot matrix
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BM-264AAND SINCE 1981 2.5 inch 64.00mm matrix height. 2. Dot size 3.2mm. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Multiplex drive , column cathode com. 64.0(2.511) 3.0(.118)MIN.
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BM-264AAND
BM-264AAND
16x16
16x16 dot matrix
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TO-264-aa
Abstract: TO-264AA TO264AA 264AA d 1047
Text: Power Packages TO-264AA 3 LEAD JEDEC TO-264AA PLASTIC PACKAGE INCHES TERM. 4 E SYMBOL ØT A S ØP Q ØR Q1 D ØR1 b2 L1 L c b 1 2 3 3 e J1 2 1 BACK VIEW MAX MILLIMETERS MIN MAX NOTES A 0.185 0.209 4.70 5.31 - b 0.037 0.055 0.94 1.40 3, 4 b1 0.087 0.102 2.21
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O-264AA
O-264AA
TO-264-aa
TO-264AA
TO264AA
264AA
d 1047
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RHR1Y75120CC
Abstract: RHR75120C TO-264-aa
Text: RHR1Y75120CC S E M I C O N D U C T O R 75A, 1200V Hyperfast Dual Diode October 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns JEDEC TO-264AA o ANODE 2 CATHODE ANODE 1 • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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RHR1Y75120CC
O-264AA
RHR1Y75120CC
1-800-4-HARRIS
RHR75120C
TO-264-aa
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SML100L16
Abstract: No abstract text available
Text: SML100L16 TO–264AA Package Outline. Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) Pin 1 – Gate 5.79 (0.228) 6.20 (0.244) 2.29 (0.090) 2.69 (0.106)
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SML100L16
264AA
SML100L16
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TO-264-aa
Abstract: SML60L38
Text: SML60L38 TO–264AA Package Outline. Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) Pin 1 – Gate 5.79 (0.228) 6.20 (0.244) 2.29 (0.090) 2.69 (0.106)
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SML60L38
264AA
00A/ms
380mS
TO-264-aa
SML60L38
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SML80L27
Abstract: No abstract text available
Text: SML80L27 TO–264AA Package Outline. Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) Pin 1 – Gate 5.79 (0.228) 6.20 (0.244) 2.29 (0.090) 2.69 (0.106)
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SML80L27
264AA
00A/ms
380mS
SML80L27
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SML50L47
Abstract: No abstract text available
Text: SML50L47 TO–264AA Package Outline. Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) Pin 1 – Gate 5.79 (0.228) 6.20 (0.244) 2.29 (0.090) 2.69 (0.106)
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SML50L47
264AA
00A/ms
380mS
SML50L47
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SML50L47
Abstract: No abstract text available
Text: SML50L47 TO–264AA Package Outline. Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) Pin 1 – Gate 5.79 (0.228) 6.20 (0.244) 2.29 (0.090) 2.69 (0.106)
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SML50L47
264AA
00A/ms
380mS
SML50L47
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SML120L16
Abstract: No abstract text available
Text: SML120L16 TO–264AA Package Outline. Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) Pin 1 – Gate 5.79 (0.228) 6.20 (0.244) 2.29 (0.090) 2.69 (0.106)
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SML120L16
264AA
00A/ms
380mS
SML120L16
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SML30L76
Abstract: No abstract text available
Text: SML30L76 TO–264AA Package Outline. Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) Pin 1 – Gate 5.79 (0.228) 6.20 (0.244) 2.29 (0.090) 2.69 (0.106)
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SML30L76
264AA
00A/ms
380mS
SML30L76
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SML50L37
Abstract: No abstract text available
Text: SML50L37 TO–264AA Package Outline. Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) Pin 1 – Gate 5.79 (0.228) 6.20 (0.244) 2.29 (0.090) 2.69 (0.106)
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SML50L37
264AA
00A/ms
380mS
SML50L37
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SML8030LVR
Abstract: No abstract text available
Text: SML8030LVR TO–264AA Package Outline. Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) Pin 1 – Gate 5.79 (0.228) 6.20 (0.244) 2.29 (0.090) 2.69 (0.106)
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SML8030LVR
264AA
00A/ms
380mS
SML8030LVR
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BFC20
Abstract: TO-264-aa
Text: SEME BFC20 LAB N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS TO–264AA TO3–PBL Package Outline. Dimensions in mm (inches) 20.0 5.0 3.3 Dia. 1 2 VDSS ID(cont) RDS(on) 3 2.0 2.0 1.0 3.4 1.2 0.6 2.8 1500V 6A Ω 2.50Ω 5.45 5.45 Pin 1 – Gate
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BFC20
264AA
BFC20
TO-264-aa
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MRF156R
Abstract: MRF156 Arco 469 ceramic capacitor
Text: MOTOROLA Order this document by MRF156/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-Effect Transistors Motorola Preferred Device N–Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.
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MRF156/D
MRF156
MRF156R
MRF156
MRF156/D*
MRF156R
Arco 469 ceramic capacitor
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REL 521
Abstract: 506 003-BEN rel 521 1.2 O-50 microcontroller based substation monitoring and c rel 511 266AA microcontroller based substation monitoring using with parameters 003-UEN 376AA
Text: REL 521 * 1.2 Line distance protection 1 MAK 506 003-BEN terminal Page 1 .\.- .~.a'.~. .~~, Changed since Oclober 1997 Data subject lo change wilhoul nolice ABB Network Partner SEgS 02 16 ~ Features .Simultaneous measurement of the phasephase and ph ase-earth loop impedances within
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003-BEN
003-UEN
003-REN
014-BEN
034-BEN
REL 521
506 003-BEN
rel 521 1.2
O-50
microcontroller based substation monitoring and c
rel 511
266AA
microcontroller based substation monitoring using with parameters
003-UEN
376AA
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SML10L100
Abstract: No abstract text available
Text: SML10L100 TO–264AA Package Outline. Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) Pin 1 – Gate 5.79 (0.228) 6.20 (0.244) 2.29 (0.090) 2.69 (0.106)
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SML10L100
264AA
00A/ms
380mS
SML10L100
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SML40L57
Abstract: No abstract text available
Text: SML40L57 TO–264AA Package Outline. Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) Pin 1 – Gate 5.79 (0.228) 6.20 (0.244) 2.29 (0.090) 2.69 (0.106)
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SML40L57
264AA
00A/ms
380mS
SML40L57
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IXTK33N50
Abstract: No abstract text available
Text: DIXYS High Current MegaMOS FET IXTK 33N50 V DSS I D cont p DS(on) 500 V 33 A 0.17 Q N-Channel Enhancement Mode Preliminary data Symbol Test conditions v DSS Tj = 25°C to 150°C vDQB Tj TO-264AA Maximum ratings = 25°C to 150°C; RGS=1.0 MQ 500 V 500 V
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33N50
O-264AA
33N50
IXTK33N50
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RHR75120
Abstract: RHR75120C TO-264-aa RHR1Y75120CC TA49042
Text: RHR1Y75120CC October 1995 75A, 1200V Hyperfast Dual Diode Features Package • Hyperfast with Soft R ecovery. <85ns • Operating Tem p eratu re. . . +175 C • Reverse V oltag e. .1200V JEDEC TO-264AA ANODE 2
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RHR1Y75120CC
RHR1Y75120CC
O-264AA
430EB71
Q0ti37fll
RHR75120
RHR75120C
TO-264-aa
TA49042
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TO-220AC Package
Abstract: No abstract text available
Text: INI INI Sem elab Power M anagem ent Division 4 GENERATION POWER M O SFETS — PACKAGES TO-220AC Package i* li ooc: i>»IQ147i p O F TO-257 Package i U DM ij^l " 1 IÜ i- 2s.*,ooe SW(CM5r High Rei, Package TO -264AA Package TO-258 Package * 4 \l D o lp o (
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O-220AC
IQ147i
O-257
-264AA
O-258
TO-220AC Package
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IXFN27N80
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowt^ 27N80 25N80 27N80 25N80 D v DSS ^D25 800 V 800V 800 V 800 V 27 A 25 A 27 A 25 A DS on 0.30 n 0.35 O 0.30 Q 0.35 O TO-264AA(IXFK) Symbol vw DSS Test Conditions
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27N80
25N80
25N80
O-264AA
IXFN27N80
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vk200 rf choke
Abstract: vk200 MRF156 VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 MRF156120 Arco 469 ceramic capacitor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-E ffect Transistors Motorola Preferred Device N-Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.
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MRF156
MRF156R
340G-02,
O-264AA)
VK200
MRF156120
MRF156R
83-j3
vk200 rf choke
VK200 r.f choke
arco 469
340G-02
choke vk200
MOSFET J220
Arco 469 ceramic capacitor
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APT8032LNR
Abstract: No abstract text available
Text: A d v a n ced P o w er Te c h n o l o g y O D APT8032LNR O S Q S 'W E R M O S 'là 800V 25.0A 0.320 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter
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APT8032LNR
APT8032LNR
MIL-STD-750
-264AA
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Untitled
Abstract: No abstract text available
Text: □ IXYS HHifl JL æ* X HiPerFET Power MOSFETs IXFX120N20 IXFK120N20 Vœs = 200 V 'd* = 120 A 17 m -Q Rosi», = Single M O SFET Die t rr < 250 ns Preliminary data sheet Symbol TestC onditions Maximum Ratings V VDGR Tj = 25°C to 150°C Tj = 25°C to 150°C; RGS = 1 M£i
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IXFX120N20
IXFK120N20
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