HM6287HL-35
Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Text: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM
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MARKING CODE YA
Abstract: No abstract text available
Text: european space agency agence spatiale européenne Pages 1 to 48 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC 256K 262144x1 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPE M65697EV ESA/SCC Detail Specification No. 9301/038
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262144x1
M65697EV
MARKING CODE YA
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W22C
Abstract: W22C4096 262144X16
Text: AUó I« tan W22C4096 Winbond 2 5 6 K X 1 6 BITS/512KX8 BITS CMOS MASK ROM GENERAL DESCRIPTION FEATURES Active: lOOmW typ. The W22C4096 is a high speed, low power mask-programmable read-only memory organ Standby: 25^W(typ.) ized as 262144X16 bits or 524288 X 8 bits
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W22C4096
BITS/512KX8
W22C4096
262144X16
B-1930
W22C
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NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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NS455
Abstract: MSM534000 MSM534000RS
Text: 4bE D • O K I semiconductor MSM534000 b724240 0 K1 D0CHÖQ7 blT «O K IJ semiconductor group 262,144 WORD x 16 BIT MASK ROM GENERAL DESCRIPTION The MSM534000RS is a silicon gate CMOS device ROM w ith 262,144 words x 16 b it capacity. It operates on a 5V single power supply and all inputs and outputs are TTL compatible. The
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b724240
MSM534000_
MSM534000RS
X-46-13-15â
MSM534000.
T-46-13-15
NS455
MSM534000
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HN462532G
Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .
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VV005
Abstract: No abstract text available
Text: »HYUNDAI HY51V4370B f e r ie s 256KX 16-bit CMOS DRAM with 2 WE & WPB PRELIMINARY DESCRIPTION The HY51V4370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve
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HY51V4370B
256KX
16-bit
400mil
40pin
40/44pin
1AC24-00-M
VV005
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RAU27
Abstract: rau2
Text: "HYUNDAI HY51V4264B Series 256K x 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V42648 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CM O S process technology and advanced circuit design technique to achieve fast
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HY51V4264B
16-bit
HY51V42648
400mil
40pin
4Q/44pin
08mWFLB_
1AC30-10-MAY95
RAU27
rau2
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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Untitled
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES I • • • • • • • • • • • • Organization . . . 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
16K-Byte/One
32K-Byte/16K-Word
64K-Byte/32K-Word
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O09P
Abstract: No abstract text available
Text: TMS29LF400T, TMS29LF400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES • • • • • • • • • 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors - One 32K-Byte/16K-Word Sector
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TMS29LF400T,
TMS29LF400B
8-BIT/262144
16-BIT
44-Pin
48-Pin
O09P
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 4 3 7 0 B S e r ie s 256K* 16-bit CMOS DRAM with 2 WE & WPB PRELIMINARY DESCRIPTION The HY51V4370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve
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16-bit
HY51V4370B
400mil
40pin
40/44pin
1AC24-00-MA
DDD27M
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Untitled
Abstract: No abstract text available
Text: » « H Y U N D A I ín g H Y 5 1 V 4 4 6 0 B _S g n g s 256K X 16-bit CMOS DRAM with 2 CAS & WPB PRELIMINARY DESCRIPTION The HY51V4460B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve
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16-bit
HY51V4460B
400mil
40pin
40/44pin
1AC28-00-MA
HY51V446B
HY514370BJC
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MSD 7818
Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1
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6250b
MSD 7818
MN9106
information applikation
7490 N
TDA 5700
information applikation mikroelektronik
udssr hefte
143KT1
Mikroelektronik Information Applikation
K 176 LE, K 561 LN
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HY514260
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HY514260 Series 2 5 6 K X 1 6 - b lt C M O S DRAM w tth 2 C A S PRELIMINARY DESCRIPTION The HY514260 Is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY514260
16-bit
400mil
40pln
40/44pin
1AC11-00-APR93
HY514260JC
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Untitled
Abstract: No abstract text available
Text: “HYUNDAI HY514370B JSeries 256K X 16-blt CMOS ORAM with 2 WE & WPB PRELIMINARY DESCRIPTION The HY514370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY514370B
16-blt
16-bit
400mil
40pin
40/44pin
4OU10-Z62]
72K18
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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phct
Abstract: baw16 OCB-15 wpp3 gc137 mcag1 d0ji
Text: H Y 5 1 V 4 2 6 0 B S e r ie s 256K X 16-bit CMOS DRAM with 2CAS " H Y U N D A I DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve
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HY51V4260B
16-bit
400mil
40pin
40/44pin
4fci750Ã
1AC26-10-MAY95
phct
baw16
OCB-15
wpp3
gc137
mcag1
d0ji
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Untitled
Abstract: No abstract text available
Text: 'H YU N D AI HY514370B _Series 256K X 16-blt CMOS DRAM 2 WE & WPB w ith PRELIMINARY DESCRIPTION The HY514370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY514370B
16-blt
HY514370B
16-bit
400mil
40pin
40/44pin
FEAT120)
0J312I0300)
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Untitled
Abstract: No abstract text available
Text: TMS29LF4Q0T, TMS29LF400B 524288 BY 8-BIT/262144 BY 15-BIT FLASH MEMORIES * Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation f • • • • 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector
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TMS29LF4Q0T,
TMS29LF400B
8-BIT/262144
15-BIT
SMJS841A
16K-Byte/One
32K-Byte/16K-Word
64K-Byte/32K-Word
TMS29LF400T,
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TMS29F400B
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES * Single Power Supply Supports 5 V ±10% Read/Write Operation • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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OCR Scan
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
4073307/B
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PDF
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 4 4 6 0 B S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS & WPB PRELIMINARY DESCRIPTION The HY514460B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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256KX
16-bit
HY514460B
400mil
40pin
40/44pin
1AC27-00-MAY94
4b750Ã
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