Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    260CA Search Results

    SF Impression Pixel

    260CA Price and Stock

    MDE Semiconductor Inc 15KP260CA

    TVS DIODE BP 260VRWM 416.7VC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 15KP260CA Bulk 1,000 1
    • 1 $9.95
    • 10 $9.95
    • 100 $9.95
    • 1000 $9.95
    • 10000 $9.95
    		Buy Now

    MDE Semiconductor Inc 30KP260CA

    TVS DIODE BP 260VRWM 416.0VC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 30KP260CA Bulk 1,000 1
    • 1 $18.5
    • 10 $18.5
    • 100 $18.5
    • 1000 $18.5
    • 10000 $18.5
    		Buy Now

    MDE Semiconductor Inc 30KPA260CA

    TVS DIODE BP 260VRWM 416.0VC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 30KPA260CA Bulk 1,000 1
    • 1 $18.5
    • 10 $18.5
    • 100 $18.5
    • 1000 $18.5
    • 10000 $18.5
    		Buy Now

    MDE Semiconductor Inc RT100KP260CA

    TVS DIODE BP 260VRWM 512.0VC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RT100KP260CA Bulk 1,000 1
    • 1 $22.5
    • 10 $22.5
    • 100 $22.5
    • 1000 $22.5
    • 10000 $22.5
    		Buy Now

    MDE Semiconductor Inc MRT100KP260CA

    TVS DIODE BP 260VRWM 512.0VC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRT100KP260CA Bulk 1,000 1
    • 1 $22.5
    • 10 $22.5
    • 100 $22.5
    • 1000 $22.5
    • 10000 $22.5
    		Buy Now
    Find more 260CA price and stock on Findchips.com

    260CA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000,


    Original     		PDF PTFA241301E PTFA241301F 130-watt, CDMA2000, H-30260-2 H-31260-2

    elna 50v

    Abstract: No abstract text available
    Text: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G


    Original     		PDF PTFA261301E PTFA261301F 130-watt, CDMA2000, H-30260-2 H-31260-2 elna 50v

    Untitled

    Abstract: No abstract text available
    Text: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA and CDMA2000


    Original     		PDF PTFA241301E PTFA241301F 130-watt, CDMA2000 PTFA241301F*

    A211801E

    Abstract: 200B103 LM7805 PTFA211801E
    Text: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211801E PTFA211801F 180-watt, 2140dangerous A211801E 200B103 LM7805

    roger

    Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
    Text: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and


    Original     		PDF PTF041501E PTF041501F 150watt, CDMA2000 H-30260-2 H-31260-2 roger H-30260-2 LM7805 ceramic capacitor 103 z 21

    PTF141501E

    Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56
    Text: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital


    Original     		PDF PTF141501E PTF141501F PTF141501E 150-watt, PTF141501E* PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56

    MPLAD30KP14A

    Abstract: MPLAD30KP30CA 260CA MPLAD15KP MPLAD30KP400CA
    Text: MPLAD30KP14A – MPLAD30KP400CA Available SURFACE MOUNT 30,000 WATT TRANSIENT VOLTAGE SUPPRESSOR High-Reliability screening available in reference to MIL-PRF-19500 DESCRIPTION These high power 30 kW rated transient voltage suppressors in a surface mount package are


    Original     		PDF MPLAD30KP14A MPLAD30KP400CA MIL-PRF-19500 DO-160, RF01005, MPLAD30KP14A MPLAD30KP30CA 260CA MPLAD15KP MPLAD30KP400CA

    Untitled

    Abstract: No abstract text available
    Text: MPLAD30KP14A – MPLAD30KP400CA Available Surface Mount 30,000 Watt Transient Voltage Suppressor High-Reliability screening available in reference to MIL-PRF-19500 DESCRIPTION These high power 30 kW rated transient voltage suppressors in a surface mount package are


    Original     		PDF MPLAD30KP14A MPLAD30KP400CA MIL-PRF-19500 DO-160, KP14A RF01005,

    PTF191601E

    Abstract: BCP56 LM7805 ATC 4r7 capacitor 100b
    Text: PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 – 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the


    Original     		PDF PTF191601E PTF191601F PTF191601E PTF191601F 160-watt, PTF191601F* BCP56 LM7805 ATC 4r7 capacitor 100b

    Untitled

    Abstract: No abstract text available
    Text: MPLAD30KP14A – MPLAD30KP400CA Available Surface Mount 30,000 Watt Transient Voltage Suppressor High-Reliability screening available in reference to MIL-PRF-19500 DESCRIPTION These high power 30 kW rated transient voltage suppressors in a surface mount package are


    Original     		PDF MPLAD30KP14A MPLAD30KP400CA MIL-PRF-19500 DO-160, RF01005,

    PTF211301E

    Abstract: No abstract text available
    Text: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTF211301E PTF211301F 130watt, PTF211301F*

    ALT230

    Abstract: No abstract text available
    Text: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA and CDMA2000 operation


    Original     		PDF PTFA261301E PTFA261301F 130-watt, CDMA2000 ALT230

    PTF082001E

    Abstract: atc 1725 LM7805 smd smd transistor infineon 106T BCP56 PTF082001F 106T capacitor
    Text: PTF082001E PTF082001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 860 – 900 MHz Description The PTF082001E and PTF082001F are 200-watt, internally-matched GOLDMOS FETs intended for CDMA and CDMA 2000 applications in the 860 to 900 MHz band. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF082001E PTF082001F PTF082001E PTF082001F 200-watt, PTF082001F* IS-95 17erous atc 1725 LM7805 smd smd transistor infineon 106T BCP56 106T capacitor

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: C0201C470J3GACTU C0201C470J3GAC7867 Capacitor, ceramic, 47 pF, +/-5% Tol, 25V, C0G, 0201 General Information Manufacturer: KEMET Electrical Specifications Capacitance: 47 pF Chip Size: 0201 Voltage: 25V Temperature Coefficient: C0G Tolerance:


    Original     		PDF C0201C470J3GACTU C0201C470J3GAC7867) 260ca4db-0792-4219-a54a-fa4ebfc6046b

    LM7805

    Abstract: PTFA212001E
    Text: PTFA212001E PTFA212001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are thermally-enhanced, 200-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA212001E PTFA212001F 200-watt, H-30260-2 H-31260-2 LM7805

    PTFA261301E

    Abstract: No abstract text available
    Text: Preliminary PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz PTFA261301E* Package 30260 Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications.


    Original     		PDF PTFA261301E PTFA261301F 130-watt, CDMA2000 PTFA261301E* PTFA261301F*

    A211801E

    Abstract: PTFA211801E
    Text: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211801E PTFA211801F 180-watt, 2140dangerous A211801E

    SCHEMATIC DIAGRAM 3.3kv

    Abstract: BCP56 LM7805 PTF041501E PTF041501F ceramic capacitor 103 z 21
    Text: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characaterized for CDMA and


    Original     		PDF PTF041501E PTF041501F PTF041501E PTF041501F 150watt, CDMA2000 IS-95 SCHEMATIC DIAGRAM 3.3kv BCP56 LM7805 ceramic capacitor 103 z 21

    PTF141501A

    Abstract: LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56
    Text: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent


    Original     		PDF PTF141501A PTF141501A a150-watt, LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56

    p 1703 bds

    Abstract: No abstract text available
    Text: PTFA082201E PTFA082201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are thermally-enhanced, 220-watt, internally-matched GOLDMOS FETs intended for CDMA and WCDMA applications. They are characaterized for two-carrier


    Original     		PDF PTFA082201E PTFA082201F 220-watt, H-30260-2 H-31260-2 p 1703 bds

    Untitled

    Abstract: No abstract text available
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Thermally-enhanced


    Original     		PDF PTFA092201E PTFA092201F 220-watt, H-30260-2 H-31260-2

    Untitled

    Abstract: No abstract text available
    Text: PTFA192001E PTFA192001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are thermally-enhanced, 200-watt, internally-matched GOLDMOS FETs intended for WCDMA and CDMA applications. They are characaterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz.


    Original     		PDF PTFA192001E PTFA192001F 200-watt, H-30260-2 H-31260-2

    PTF211301F

    Abstract: PTF211301E BCP56 LM7805 PTF211301A p4 smd 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd
    Text: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTF211301E PTF211301F PTF211301E PTF211301F 130watt, PTF211301F* BCP56 LM7805 PTF211301A p4 smd 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd

    MPLAD30KP

    Abstract: No abstract text available
    Text: MPLAD30KP14A – MPLAD30KP400CA Available SURFACE MOUNT 30,000 WATT TRANSIENT VOLTAGE SUPPRESSOR High-Reliability screening available in reference to MIL-PRF-19500 DESCRIPTION These high power 30 kW rated transient voltage suppressors in a surface mount package are


    Original     		PDF MPLAD30KP14A MPLAD30KP400CA MIL-PRF-19500 DO-160, RF01005, MPLAD30KP