N10L26
Abstract: IPP47N10SL-26 smd diode code marking 33A IPB47N10SL-26 IPI47N10SL-26 PG-TO263-3-2 n10l
Text: IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 SIPMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 VDS P-TO262-3-1 V RDS on 26 m ID 47 A P-TO263-3-2
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IPI47N10SL-26
IPP47N10SL-26,
IPB47N10SL-26
P-TO262-3-1
P-TO263-3-2
P-TO220-3-1
IPP47N10SL-26
PG-TO220-3-1
SP0002-25707
N10L26
N10L26
IPP47N10SL-26
smd diode code marking 33A
IPB47N10SL-26
IPI47N10SL-26
PG-TO263-3-2
n10l
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MARKING CODE 13t sot363
Abstract: sot363 13t SOT363 13T MARKING 13t marking code BC847BPN 13t transistor free bc847bpn transistor sot363+13t
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC847BPN NPN/PNP general purpose transistor Product specification Supersedes data of 1999 Apr 26 2001 Oct 26 Philips Semiconductors Product specification NPN/PNP general purpose transistor FEATURES
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Original
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MBD128
BC847BPN
SCA73
613514/03/pp8
MARKING CODE 13t sot363
sot363 13t
SOT363 13T MARKING
13t marking code
BC847BPN
13t transistor
free bc847bpn transistor
sot363+13t
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PDF
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6MBP75TEA060
Abstract: AC200V AC2500 HCPL4504 TLP521 ipm application fuji igbt fuji
Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP75TEA060 Spec. No. : MS6M 0701 Fuji Electric Co.,Ltd. Matsumoto Factory Nov . 26 ‘02 K.Sekigawa Nov . 26 ‘02 Nishiura Nov .-26 -‘02 K.Yamada T.Fujihira MS6M 0701 a 1 22 H04-004-07 Revised Records
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6MBP75TEA060
H04-004-07
H04-004-06
H04-004-03
6MBP75TEA060
AC200V
AC2500
HCPL4504
TLP521
ipm application fuji
igbt fuji
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PDF
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2n5401ub
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 26 February 2013. INCH-POUND MIL-PRF-19500/766 26 November 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER,
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MIL-PRF-19500/766
2N5401UB,
MIL-PRF-19500.
2n5401ub
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PDF
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TRANSISTOR A331
Abstract: 395C-01
Text: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics
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MRF6404/D
MRF6404
DCS1800
PCS1900/Cellular
TRANSISTOR A331
395C-01
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PDF
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Untitled
Abstract: No abstract text available
Text: SUT461N Epitaxial planar NPN silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW Max. • Two 2SC5343 chips in SOT-26 Package Package : SOT-26
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SUT461N
300mW
2SC5343
OT-26
OT-26
KSD-T5P001-002
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PDF
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2SC5343
Abstract: SUT461N 2SC5343 equivalent
Text: SUT461N Epitaxial planar NPN silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW Max. • Two 2SC5343 chips in SOT-26 Package Package : SOT-26
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SUT461N
300mW
2SC5343
OT-26
OT-26
KSD-T5P001-002
SUT461N
2SC5343 equivalent
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PDF
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SUT466N
Abstract: KSD-T5P007-000
Text: SUT466N Semiconductor Epitaxial planar PNP silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. • 2 PNP Chips in SOT-26 PKG Package : SOT-26
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SUT466N
500mW
OT-26
OT-26
KSD-T5P007-000
SUT466N
KSD-T5P007-000
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts
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MRF6414
MRF6414
DL110/D)
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PDF
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LM1578
Abstract: LM1578A AC Transformer 750ma 0965 TRANSISTOR
Text: MILITARY DATA SHEET Original Creation Date: 04/26/95 Last Update Date: 04/26/95 Last Major Revision Date: 04/26/95 MNLM1578A-X REV 0A0 SWITCHING REGULATOR General Description The LM1578A is a switching regulator which can easily be set up for such DC-to-DC voltage
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MNLM1578A-X
LM1578A
750mA
H08CRE
LM1578
AC Transformer 750ma
0965 TRANSISTOR
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PDF
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IN4007GP
Abstract: d1 in4007gp KA7542 ABCO samsung electrolytic capacitor KA7525 24v 5a smps IN4148 5T IN4004 IRF830
Text: Ver. 3.0 KA7525/B/26 POWER FACTOR CORRECTION The KA7525/B/26 provides simple, yet high performance active power factor correction. KA7525/B/26 is optimized for electronic ballast and low power, high density power supplies requiring a minimum board area, reduced component count and low power dissipation.
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Original
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KA7525/B/26
KA7525/B/26
IN4007GP
d1 in4007gp
KA7542
ABCO
samsung electrolytic capacitor
KA7525
24v 5a smps
IN4148 5T
IN4004
IRF830
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PDF
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Untitled
Abstract: No abstract text available
Text: SUT466N Epitaxial planar PNP silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. • 2 PNP Chips in SOT-26 PKG Package : SOT-26 Ordering Information
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SUT466N
500mW
OT-26
OT-26
KSD-T5P007-001
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PDF
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Untitled
Abstract: No abstract text available
Text: SUT041N Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Reduce quantity of parts and mounting cost • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in SOT-26 Package Package : SOT-26
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SUT041N
OT-26
OT-26
KSD-T5P009-000
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PDF
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15 w RF POWER TRANSISTOR NPN
Abstract: transistor rf m 1104
Text: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics
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MRF6414/D
MRF6414
MRF6414
MRF6414/D
15 w RF POWER TRANSISTOR NPN
transistor rf m 1104
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PDF
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|
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POWER SUPPLY BOARD 20 94V0
Abstract: DDA124EK DDA114EK DDA114TK DDA114YK DDA123JK DDA143TK DDA144EK
Text: SPICE MODEL: DDA124EK DDA144EK DDA114YK DDA123JK DDA143TK DDA114TK DDA xxxx K PNP PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR • • • • A Epitaxial Planar Die Construction SOT-26 Complementary NPN Types Available (DDC) Built-In Biasing Resistors
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DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA143TK
DDA114TK
OT-26
J-STD-020C
POWER SUPPLY BOARD 20 94V0
DDA114EK
DDA114TK
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PDF
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DDA124EK
Abstract: DDA114EK DDA114TK DDA114YK DDA123JK DDA143TK DDA144EK transistor marking p06
Text: SPICE MODEL: DDA124EK DDA144EK DDA114YK DDA123JK DDA143TK DDA114TK DDA xxxx K PNP PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR • · · · A Epitaxial Planar Die Construction SOT-26 Complementary NPN Types Available (DDC) Built-In Biasing Resistors
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DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA143TK
DDA114TK
OT-26
J-STD-020C
DDA114EK
DDA114TK
transistor marking p06
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PDF
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Untitled
Abstract: No abstract text available
Text: SUT466N Epitaxial planar PNP silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. • 2 PNP Chips in SOT-26 PKG Package : SOT-26 Ordering Information
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SUT466N
500mW
OT-26
OT-26
KSD-T5P007-001
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PDF
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CMPTA94
Abstract: CP710 CXTA94 CZTA94 MPSA94
Text: PROCESS CP710 Small Signal Transistors PNP - High VoltageTransistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization
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CP710
CMPTA94
CXTA94
CZTA94
MPSA94
CMPTA94
CP710
CXTA94
CZTA94
MPSA94
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PDF
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Untitled
Abstract: No abstract text available
Text: SUT465N Dual NPN+PNP complementary Bipolar transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW Max. • 2 NPN+PNP Chips in SOT-26 PKG Package : SOT-26
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SUT465N
300mW
OT-26
OT-26
KSD-T5P006-001
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PDF
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JENNINGS RF1J
Abstract: RB7a RJ2B SFD-373 AVQ-10 L4698B JENNINGS RF1D JENNINGS Rb1h RD6B
Text: I 77340=10 14E D RICHARDSON ELECTRONICS GOOOSfll fc, Vacuum Transfer Relays iype Ooil voltage VDC typ Coll voltage (VDC RBID RB1H RB1J RB2A RB7A RB7B RD6B RF1D RF1E RF1J 26 26 26 26 26 26 26 26 26 26 RF4A RF5C RF5D RF6C RF6D RJ1H RJ2B RJ4B RJ8A 26 12 12
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OCR Scan
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SFD373A
L4698B
L4727
WSR-74C
AVQ-10
VTV075
VTV150
VTV300
VTV1250
UTV005
JENNINGS RF1J
RB7a
RJ2B
SFD-373
AVQ-10
JENNINGS
RF1D
JENNINGS Rb1h
RD6B
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PDF
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T119 A
Abstract: sot 122 SOT123 Package BLW78
Text: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain
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OCR Scan
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4-26V
BLV97CE
BLV101A
BLV101B
BLV948
OT-171,
OT-273,
OT-262A2,
2N3866
T119 A
sot 122
SOT123 Package
BLW78
|
PDF
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Transistor NEC 12d
Abstract: IN4007GP IN4007g saMSUNG ELECTROLYTIC capacitor SD series IN4007 d1 in4007gp
Text: Ver. 3.0 KA7525/B/26 POWER FACTOR CORRECTION The KA7525/B/26 provides simple, yet high perfor mance active power factor correction. KA7525/B/26 is optimized for electronic ballast and low power, high den sity power supplies requiring a minimum board area,
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OCR Scan
|
KA7525/B/26
KA7525/B/26
150mA
IN4007GP
RGP15J
IN4148
BSF2125
EI2820
Transistor NEC 12d
IN4007g
saMSUNG ELECTROLYTIC capacitor SD series
IN4007
d1 in4007gp
|
PDF
|
all diodes ratings
Abstract: No abstract text available
Text: CONTENTS SMALL-SIGNAL DEVICES Introduction .2 BIPOLAR TRANSISTORS Introduction .26 Datasheets .27
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OCR Scan
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PDF
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150 j47
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Pow er Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts
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OCR Scan
|
MRF6414
MRF6414
VcEO970
150 j47
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PDF
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