MOSFET 20V 100A
Abstract: 175C
Text: SML400HB01MF Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation -Mosfet module Maximum rated values/Electrical Properties DC Collector Current ID25 Tc=25C Tc=25C,Tvj=175C VDSS 100 V Ic, nom Ic 400 400
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SML400HB01MF
200nF
MOSFET 20V 100A
175C
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Untitled
Abstract: No abstract text available
Text: Data Sheet 1 Watt 3.3~100V ZENER DIODES Description Mechanical Dimensions (MELF) Absolute Max Ratings Symbol Zener Current See Table Characteristics Power Disspation at Tamb=25C Ptot Junction Temp. Tj Storage Temp. Range Ts Thermal Resistance Junction to Ambient Air
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200mA
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Untitled
Abstract: No abstract text available
Text: 350mW Switching Diode FMBD4148A/SE/CC/CA FMBD4148A/SE/CC/CA Data Sheet Mechanical Dimensions Description SOT-23 MARKING: FMBD4148A:5H Dimensions in mm FMBD4148CA :D6 FMBD4148CC :KD5 FMBD4148SE :D4 Maximum Ratings @TA=25C Parameter Symbol Peak Repetitive Peak reverse voltage
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350mW
FMBD4148A/SE/CC/CA
OT-23
FMBD4148A
FMBD4148CA
FMBD4148CC
FMBD4148SE
/150mA
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Untitled
Abstract: No abstract text available
Text: EQA03-25C Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage26.2 @I(Z) (A) (Test Condition)5.0m Tolerance (%)2.5 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.45 Temp Coef pp/10k Maximum Operating Temp (øC)175õ
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EQA03-25C
Voltage26
pp/10k
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175C
Abstract: IC300A
Text: SML300HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation -trench gate igbts Maximum rated values/ Electrical Properties Collector-emitter Voltage Y Vce 600 V Tc=70C, Tvj=175C Tc=25C,Tvj=175C Ic, nom
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SML300HB06
10msec,
175C
IC300A
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2000A power diode
Abstract: DIODE 200A 600V ic 7800 175C
Text: SML200HB12 Attributes: -Aerospace build standard -High reliability -Lightweight -Metal matrix base plate -AlN isolation -Trench gate igbts Maximum rated values/Electrical Properties Vce Y Collector-emitter Voltage 1200 V Tc=70C, Tvj=175C Tc=25C,Tvj=175C Ic, nom
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SML200HB12
10msec,
2000A power diode
DIODE 200A 600V
ic 7800
175C
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la 78141 pinout
Abstract: No abstract text available
Text: TICPAL22V10Z-25C, TICPAL22V10Z-30I EPIC CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPS007D − D3323, SEPTEMBER 1989 − REVISED DECEMBER 2010 JTL AND NT PACKAGE TOP VIEW 24-Pin Advanced CMOS PLD Virtually Zero Standby Power Variable Product Term Distribution Allows
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TICPAL22V10Z-25C,
TICPAL22V10Z-30I
SRPS007D
D3323,
24-Pin
la 78141 pinout
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175C
Abstract: diode 400A
Text: SML400HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Vce 600 V Ic, nom Ic 400 500 A Y Collector-emitter Voltage Tc=70C, Tvj=175C Tc=25C,Tvj=175c
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SML400HB06
10msec,
175C
diode 400A
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Untitled
Abstract: No abstract text available
Text: MPN7620-ET47 PIN Diode DESCRIPTION The MPN7620-ET47 is a silicon PIN diode. PACKAGE STYLE ET47 FEATURES • Rugged construction MAXIMUM RATINGS RATING LIMITS UNITS Vr 20 V o Pdiss 1W at 25 C Top -65 to 150 o -65 to 150 o Tstg C C ELECTRICAL CHARACTERISTICS Tc=25C
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MPN7620-ET47
MPN7620-ET47
500MHz
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175C
Abstract: No abstract text available
Text: SML300HB12 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation -trench gate igbts Maximum rated values/Electrical Properties Vce 1200 V Y Collector-emitter Voltage Tc=70C, Tvj=175C Tc=25C,Tvj=175C Ic, nom
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SML300HB12
10msec,
Peak14
175C
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bu90030g
Abstract: 9 pin to 15 PIN wiring DIAGRAM
Text: 1/4 Structure Function Voltage Regulated Charge Pump IC Silicon Monolithic Integrated Circuit Product BU90030G - Input voltage range 2.0V～4.0V - PFM operation - Output voltage 4.0V typ - 1.5MHz(typ) switching frequency. - SSOP6 package Function Absolute Maximum rating（Ta=25c）
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BU90030G
75mW/c
R1010A
bu90030g
9 pin to 15 PIN wiring DIAGRAM
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175C
Abstract: VCE-600V RG82
Text: SML150FB12 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/Electrical Properties Collector-emitter Voltage 1200 V Ic, nom Ic 150 200 A Y Vce Tc=70C, Tvj=175C Tc=25C,Tvj=175C
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SML150FB12
10msec,
175C
VCE-600V
RG82
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Untitled
Abstract: No abstract text available
Text: TICPAL22V10Z-25C, TICPAL22V10Z-30I EPIC CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPS007D − D3323, SEPTEMBER 1989 − REVISED DECEMBER 2010 JTL AND NT PACKAGE TOP VIEW 24-Pin Advanced CMOS PLD Virtually Zero Standby Power Variable Product Term Distribution Allows
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TICPAL22V10Z-25C,
TICPAL22V10Z-30I
SRPS007D
D3323,
24-Pin
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GI3055
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2006/05/12 REVISED DATE :2007/01/25C GI3055 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 26m 15A Description The GI3055 provide the designer with the best combination of fast switching, ruggedized device design, low
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2007/01/25C
GI3055
GI3055
O-251)
O-251
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Untitled
Abstract: No abstract text available
Text: LX1973A Automotive Light Sensor TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ̇ Nearly Perfect Best Eye Human Eye Spectral Response ̇ 25C Dark Current <0.005 lux ̇ 5 Decades Compressed Output ̇ 10% Accuracy Over Temperature ̇ Scalable Output Voltage
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LX1973A
LX1973A
lux93-2570
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Untitled
Abstract: No abstract text available
Text: ÖTblTaS QG7b55b M • TIBPAL16L8-30M , TIBPAL16R4-30M , TIBPAL16R6-30M , TIBPAL16R8-30M TIBPAL16L8-25C, TIBPAL16R4-25C, TIBPAL16R6-25C, T IB P A L16R8-25C LOW-POW ER HIGH-PERFORM ANCE IMPACT PAL CIRCUITS 03337, FEBRUARY 1984-REVISED AUGUST 1989 H ig h -P erfo rm an ce O p eration
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QG7b55b
TIBPAL16L8-30M
TIBPAL16R4-30M
TIBPAL16R6-30M
TIBPAL16R8-30M
TIBPAL16L8-25C,
TIBPAL16R4-25C,
TIBPAL16R6-25C,
L16R8-25C
1984-REVISED
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tibpal programming
Abstract: TIBPAL16LS-30M 16r8-25c
Text: TIBPAL16L8-30M, TIBPAL1BR4-30M, TIBPAL16R6 30M, TIBPAL16R8 3QM TIBPAL16L8-25C, TIBPAL16R4-25C, TIBPAL 16R6 25C, TIBPAL 16R8 25C LOW POWER HIGH-PERFORMANCE IMPACT PAL CIRCUITS F E B R U A R Y 1 9 8 4 - R E V IS E D D E C E M B E R 1 9 8 7 * • • * High-Performance Operation
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TIBPAL16L8-30M,
TIBPAL1BR4-30M,
TIBPAL16R6
TIBPAL16R8
TIBPAL16L8-25C,
TIBPAL16R4-25C,
PAL16L8A,
PAL16R4A,
PAL16R6A,
PAL16R8A
tibpal programming
TIBPAL16LS-30M
16r8-25c
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Untitled
Abstract: No abstract text available
Text: TIBPAL20L8 25C, TIBPAL20R4-25C, TIBPAL20R6 25C, TIBPAL20R8 25C LOW-POWER HIGH PERFORMANCE IMPACT PAL CIRCUITS 0 2 9 2 0 , M A Y 1 9 8 7 - R E V IS E D A U G U S T 1 9 8 9 Low-Power, High Performance Reduced I c e of 105 mA Max T IB P A L2 0 L 8 ' J T OR N T P A C KA G E
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TIBPAL20L8
TIBPAL20R4-25C,
TIBPAL20R6
TIBPAL20R8
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diode Lz zener
Abstract: zener ma 1150
Text: Diodes Zener Diode for Constant Voltage Control Anode Common Twin Model UMZ8.2N •Features •External dimensions (Units: mm) 1) Com pact mold type (UMD3) 2)High reliability •Construction Silicon epitaxial planar •Absolute maximum ratings (Ta=25C) Parameter
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Untitled
Abstract: No abstract text available
Text: TICPAL18V8-30M, TICPAL18V8 25C ADVANCED EPICm CMOS GENERIC M i D 3 0 8 7 . DECEMBER 1 9 8 7 • 20-Pin Advanced C M OS Generic PAL •
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TICPAL18V8-30M,
TICPAL18V8
20-Pin
25-ns
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Untitled
Abstract: No abstract text available
Text: TICPAL22V1OZ 25C, TICPAL22V10Z-35C EPIC ' CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS • 24-Pin Advanced CMOS PAL • Virtually Zero Standby Power • {TOP VIEW C LK /I C 1 U iC 2
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TICPAL22V1OZ
TICPAL22V10Z-35C
24-Pin
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D3323
Abstract: 22v10z 30INT transistor k 525
Text: TICPAL22V10Z-25C, TICPAL22V10Z-30I EPIC CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS _SRPS007C - D3323. SEPTEMBER 1989 - REVISED FEBRUARY 1992 JTL AND NT PACKAGE TOP VIEW 24-Pin Advanced CMOS PLD Virtually Zero Standby Power CLK/ Propagation Delay Time:
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TICPAL22V10Z-25C,
TICPAL22V10Z-30I
SRPS007C
D3323.
24-Pin
752S6
D3323
22v10z 30INT
transistor k 525
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JHV34
Abstract: No abstract text available
Text: High Voltage Rectifier Assembly JHV34 Series •1/2-13 Glass Melamine Stud Mounting: Horizontal convection cooling Horizontal or vertical (forced air or oil) DC output rating- 12 Amps/25C convection cooled - 30.5 Amps/40‘C forced air cooled @ 1000 LFM
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JHV34
Amps/25C
Amps/40
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BZW20 DIODE
Abstract: BZW20 Q62702-Z1387 5C048
Text: 2SC D • fl23SbOS Q0Q4677 2 ■SIEfi . Control Unit 25C 0487 7 ~Q . " f _ />r BZW 20 “ SIEMENS AKTIEN6ESELLSCHAF This component, a transistor with integrated base emitter resistance and a Z diode, in TO 236 case 24 A 3 DIN 41869 is designed for use as control unit in various professional and
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fl23SbQS
Q0Q4677
BZW20
Q62702-Z1387
BZW20 DIODE
BZW20
Q62702-Z1387
5C048
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