Si9803DY
Abstract: 1682V
Text: Si9803DY P-Channel Reduced Qg, Fast Switching MOSFET Product Summary VDS V –25 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V "5.9 0.060 @ VGS = –3.0 V "4.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si9803DY
S-53240--Rev.
25-Aug-97
1682V
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Untitled
Abstract: No abstract text available
Text: SEPTEMBER 12,1997 TEST REPORT #97436 DURABILITY/HUMIDITY TEST SOLC/TOLC SAMTEC , INC. APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. Contech Research . CERTIFICATION This is to certify that the evaluation described herein was
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10012-l
25Aug97
08Sep97
25xDUR
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Si4980DY
Abstract: No abstract text available
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(ON) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4980DY
S-53722--Rev.
25-Aug-97
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82597
Abstract: No abstract text available
Text: r OCTOBER I,1997 TEST REPORT #97359 QUALIFICATION TESTING OPC SAMTEC CORPORATION APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. Contech Research 1 CERTIFICATION This is to certify that the evaluation described herein was
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10012-l
82597
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Untitled
Abstract: No abstract text available
Text: DG458/459 Fault-Protected Single 8-Ch/Diff. 4-Ch Analog Multiplexers Features Benefits Applications D D D D D D D D D D D D D D D D D D D Fault and Overvoltage Protection All Channels Off When Power Off Latchup-Proof Fast Switching—TA: 200 ns Break-Before-Make Switching
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DG458/459
DG458
DG459
S-52878--Rev.
25-Aug-97
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DG458
Abstract: DG458DJ DG459 DG459DJ
Text: DG458/459 Fault-Protected Single 8-Ch/Diff. 4-Ch Analog Multiplexers Features Benefits Applications D D D D D D D D D D D D D D D D D D D Fault and Overvoltage Protection All Channels Off When Power Off Latchup-Proof Fast Switching—TA: 200 ns Break-Before-Make Switching
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DG458/459
DG458
DG459
S-52878--Rev.
25-Aug-97
DG458DJ
DG459DJ
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Si4980DY
Abstract: No abstract text available
Text: Si4980DY Dual N-Channel 80-V Rated MOSFET Product Summary VDS V 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4980DY
S-53722--Rev.
25-Aug-97
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Si4980DY
Abstract: No abstract text available
Text: Si4980DY Dual N-Channel 80-V Rated MOSFET Product Summary VDS V 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4980DY
S-53722--Rev.
25-Aug-97
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Untitled
Abstract: No abstract text available
Text: 4 3 TH IS DRAWING IS U N P U B LISH ED . COPYRIGHT 1997 2 R E L E A S E D F O R P U B L IC A T IO N LOC A L L RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. 1 DIST R E V IS IO N S J LTR DESCRIPTION 01 DATE REVISED ECR —06 —0 0 6 0 3 3 DWN APVD T.K T.S
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10JAN06
25AUG97
FJ0T0102
00-035QEEE1
MAR2000
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Siliconix
Abstract: No abstract text available
Text: SÌ4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET V o s (V) *OS<ON} (3 ) I d (A) 0,075 @ VGs = 10 V ±3.7 0.095 @ V qs = 6.0 V ±3.2 80 D Q SO -8 It >1- SOIC-8 i o N-Channel MOSFET A B S O L U T E M A X I M U M R A T IN G S ?T:, '¿5 C U N L E S S O T H E R W IS E N O T E D »
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4980DY
S-53722--
25-Aug-97
Siliconix
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ4980DY S e m i c o n d u c t o r s Dual N-Channel 80-V Rated MOSFET Product Summary V d s V 80 TDS(on) (£2) I D (A) 0.075 @ VGS = 10 V ±3.7 0.095 @ VGS = 6.0 V ±3.2 p o * 6' D O SO-8 Si [T ~8~| D, G, [T HU Dl oJl 6 1 Dt S2 m ~ n d2 G2 |~4~ Top View'
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4980DY
S-53722--
25-Aug-97
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Untitled
Abstract: No abstract text available
Text: l EMI C DG458/459 Semiconductors Fault-Protected Single 8-Ch/Diff. 4-Ch Analog Multiplexers Features Benefits Applications • • • • • • • • • • • • • • • • • • • Fault and Overvoltage Protection All Channels Off When Power Off
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DG458/459
DG458
DG459
25-Aug-97
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ9803DY Semiconductors P-Channel Reduced Qg, Fast Switching MOSFET Product Summary V d s V rDS(on) (£2) 0.040 @ VGS = -4.5 V 0.060 @ VGS = -3.0 V 25 I d ( A) ±5.9 ± 4.8 -tt^ e e0 o < îf S S S in SO-8 Z3 D 13 d s □: sŒ sG œ [T jO ID !O il-
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9803DY
S-53240--
25-Aug-97
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