KS0174
Abstract: KS0164 Musical ICs roland e 16
Text: PRODUCT GUIDE 1. Function Guide F eatures • Supp * t s COROOI 4:4:4,4:2:1,2:1:1 MKl ROB true cater, high, KS0119QFP color indexed oolof input formats oorrtain 3 256X8 CLUT 1Q0QFP • Contains colorspace converter • Provides digital and analog mixing
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KS0119QFP
256X8
KS0122
RGBS65
CCIR656
KS0123
44PLCC)
29MhZ
CCIR601/CCIR656
KS0143
KS0174
KS0164
Musical ICs
roland e 16
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IC1210-m128LQ
Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Text: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are
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FPGA with i2c eeprom
Abstract: EEPROM I2C atmel ,vhdl code for implementation of eeprom verilog code for i2c vhdl code for i2c interface in fpga verilog code for implementation of eeprom vhdl code for i2c 256X8 ram A3P400 APA150
Text: Application Note AC214 Embedded SRAM Initialization Using External Serial EEPROM Introduction Embedded SRAM blocks have become common in FPGA design. Since SRAM is a volatile memory type, the stored data vanishes in the absence of power. When power is restored, the memory is empty. As many
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AC214
FPGA with i2c eeprom
EEPROM I2C atmel
,vhdl code for implementation of eeprom
verilog code for i2c
vhdl code for i2c interface in fpga
verilog code for implementation of eeprom
vhdl code for i2c
256X8 ram
A3P400
APA150
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MK48T87B24
Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W
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M27C64A-15F1
M27C64A-20F1
M27C64A-25F1
M27C64A-30F1
M27C64A-20F6
M27C64A-25F6
M27C64A-30F6
ST16601
ST16F48
ST16SF48
MK48T87B24
ST24C02CB1
MK48T18B15
M48Z32Y-100PC1
M2764AF1
MK48Z02B-20
MKI48Z12B15
ST24C01CB1
MK48Z02B-25
ST24C16CM1TR
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HT66F004
Abstract: HT48R002 HT66F002 HT16K33 HT46R002 HT12F application circuit HT66F018 HT46R004 HT46R0042 HT46R066B
Text: Holtek Company Introduction Introduction Unrelenting growth and the release of a continuous stream of competitive and functionally rich new semiconductor devices onto the global market has been the hallmark of Holtek Semiconductor since the establishment of the company back in 1983 to the present
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32-bit
HT95R24.
HT95R25.
HT95R33.
HT95R34.
HT95R35.
HT98R068-1.
HT9B92.
HT9B92G.
HT9B95.
HT66F004
HT48R002
HT66F002
HT16K33
HT46R002
HT12F application circuit
HT66F018
HT46R004
HT46R0042
HT46R066B
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a to d converter interface with 8051
Abstract: 256X8* sram temperature sensor interface with 8051 8051 sensor 1kx16 voltage comparators 256X8 ram 256x8 VDSP1040 Number pad 8051
Text: VDSP1040 VERSA DSP Product Technical Brief Rev 1.0 MIXED-SIGNAL MICRO DSP Overview Applications The VERSA DSP is a highly integrated, 8051 based, high performance data acquisition system that includes an embedded DSP instruction set and 16-bit Sigma-Delta A/D and D/A converters.
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VDSP1040
16-bit
32Kx8
16Kx16
1Kx16
256x8
a to d converter interface with 8051
256X8* sram
temperature sensor interface with 8051
8051 sensor
1kx16
voltage comparators
ram 256x8
VDSP1040
Number pad 8051
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PIC16LF648A
Abstract: PIC16F648A PIC16F648a PWM c programming DK-2750 200B
Text: PIC16F648A FLASH-Based Microcontrollers with Comparators, CCP and USART Product Brief High Performance RISC CPU: Special microcontroller features: • Operating Speed: - DC - 20 MHz Clock Speed - DC - 200 ns Instruction Cycle Time • 4096 x 14 on-chip FLASH program memory
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PIC16F648A
16-bit
reg45
D-85737
DS40242A-page
PIC16LF648A
PIC16F648A
PIC16F648a PWM c programming
DK-2750
200B
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is25c64B
Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are
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IS23SC55160
Abstract: is25c64B is61wv5128 is62c1024al TSOP2-44 IS61WV51216 is62c51216 tqfp-100 IS43DR16640A is45vs16160d
Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are
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IS61SP25636
Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B
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32Kx8
32Kx16
128Kx8
64Kx16
128Kx16
IS61C64B
IS61C256AH
IS61C3216
IS61C3216B
IS61SP25636
s62lv256
256x16 sram
89C64
IS41LV16105
soj44
non-volatile SRAM 4KX8
issi 32kx16
IS80C31
64KX64
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MK45H14
Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
Text: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .
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M27C64A
M27C256B
M87C257
M27C512
M27V512
M27C1001
M27V101
M27C1024
M27C2001
M27V201
MK45H14
AN-211
mk48c02
M48Z09
M48Z19
ST16XY
ST16xyz
M48Z32Y
MK45h04
M/MCMA140P1600TA
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design of wireless data modem using fsk modulation
Abstract: plc modem using fsk 4 QAM modulator demodulator circuitry QAM FSK demodulator audio FSK modulator and Demodulator cmx869 keypad encoder caller id converter dtmf to fsk PLC modem 3V wireless keyboard circuit board
Text: CMX850 Communications Controller INNOVATIONS INV/Telecom/850/1 September 2002 - Single-Chip Embedded 80C51 µC with Integral V.22bis Modem - Embedded µController - V.22bis Modem - 3V Low-Power Operation with Advanced Power Management - 100-pin LQFP Package Enhanced 80C51 µC with Internal 8kB XRAM
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CMX850
INV/Telecom/850/1
80C51
22bis
100-pin
80C51
10-Bit)
CMX850L8
design of wireless data modem using fsk modulation
plc modem using fsk
4 QAM modulator demodulator circuitry
QAM FSK demodulator
audio FSK modulator and Demodulator
cmx869
keypad encoder
caller id converter dtmf to fsk
PLC modem
3V wireless keyboard circuit board
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hn29w256
Abstract: SRAM 4KX8 BP-119 TFP-32 SRAM 16k*8 HB289008A4
Text: link Device Name Total Size Family Device Organisation Access PackageTime Typemax Pincount [ns] ATA-68 HB286008A3 8Mbyte NVM Flash_Card - HB286008C3 8Mbyte NVM Flash_Card - - CF-50 HB286015A3 15Mbyte NVM Flash_Card - - ATA-68 HB286030A3 30Mbyte NVM Flash_Card
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HB286008A3
HB286008C3
HB286015A3
HB286030A3
HB286030C3
HB286045A3
HB286045C3
HB286060A3
HB286075A3
HB286090A3
hn29w256
SRAM 4KX8
BP-119
TFP-32
SRAM 16k*8
HB289008A4
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Untitled
Abstract: No abstract text available
Text: SMART SM332Q4AON5ZUUU Modular Technologies January 22, 1998 1MByte 256K x 32 SRAM Module - 256Kx4 based 72-pin SIMM Features Part Numbers • • • • • • • • SM332Q4AON5ZU15 SM332Q4AON5ZU20 SM332Q4AON5ZU25 Standard : JEDEC Access Time : 15/20/25ns
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SM332Q4AON5ZUUU
256Kx4
72-pin
SM332Q4AON5ZU15
SM332Q4AON5ZU20
SM332Q4AON5ZU25
15/20/25ns
400mil
AMP-7-382486-2
AMP-822019-4
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Untitled
Abstract: No abstract text available
Text: K6F4008V1D Family CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 16, 2000 Preliminary 1.0 Finalized - Change for tWHZ: 25 to 20ns for 70ns product
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K6F4008V1D
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Untitled
Abstract: No abstract text available
Text: K6F4008U1D Family CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft March 16, 2000 Preliminary 1.0 Finalized - Change for tWHZ: 25 to 20ns for 70ns product
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K6F4008U1D
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BP-119
Abstract: CP44 SRAM 16k*8
Text: Device Name Total Size Family Device Organi- Access PackageSupply Remarks sation Time TypeVoltage max Pincount [V] [ns] 2,1 MMC-7 2.70 - 3.60 MultiMediaCard TM 2.5 HB288016MM1 16Mbyte NVM Flash_Card HB288032A5 32Mbyte NVM Flash_Card - 55 70 ATA-68 3.30 - 5.00 PC ATA card
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HB288016MM1
16Mbyte
ATA-68
HB288032A5
32Mbyte
HB288032A5SR
ATA-68
HB288032A6
320Mbyte
BP-119
CP44
SRAM 16k*8
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HN58V1001TI-25E
Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,
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REJ01C0001-1000
HN58V1001TI-25E
R1EX25256ATA00I
renesas tcam
tcam renesas
cypress tcam
idt tcam
r1qaa7218rbg
R1LV0816A
M5M51008DFP-55H
R1LV1616RBG-7SI
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM K6F2008T2E Family Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark June 16 , 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6F2008T2E
256Kx8
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K6F2008V2E-LF55
Abstract: K6F2008V2E K6F2008V2E-LF70 K6F2008V2E-YF55 K6F2008V2E-YF70
Text: CMOS SRAM K6F2008V2E Family Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 19 , 2001 Preliminary 1.0 Finalize September 27, 2001 Final 1.1 Revised
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K6F2008V2E
256Kx8
32-TSOP1-0813
K6F2008V2E-LF55
K6F2008V2E-LF70
K6F2008V2E-YF55
K6F2008V2E-YF70
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Untitled
Abstract: No abstract text available
Text: BiCMOS SRAM KM68B1002 128Kx8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The KM68B1002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The KM68B1002 uses eight common Input and output lines and has an output enable pin which operates
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KM68B1002
128Kx8
KM68B1002
576-bit
32-pin
00S37B3
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Untitled
Abstract: No abstract text available
Text: K6F4008U1D Family CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft March 16, 2000 Preliminary 1.0 Finalized - Change for tWHZ: 25 to 20ns for 70ns product
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K6F4008U1D
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Untitled
Abstract: No abstract text available
Text: K6F4008V1D Family CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 16, 2000 Preliminary 1.0 Finalized - Change for tWHZ: 25 to 20ns for 70ns product
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K6F4008V1D
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K6F2008U2E
Abstract: K6F2008U2E-YF55 K6F2008U2E-YF70
Text: K6F2008U2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6F2008U2E
256Kx8
K6F2008U2E-YF55
K6F2008U2E-YF70
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