TMS320P14
Abstract: TMS320LC15
Text: TMS320C1x DIGITAL SIGNAL PROCESSORS SPRS009C – JANUARY 1987 – REVISED JULY 1991 • • • • • • • • • • • • • • • Performance Up to 8.77 MIPs • • All TMS320C1x Devices are Object Code Compatible 144/256-Word On-Chip Data RAM
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TMS320C1x
SPRS009C
144/256-Word
TMS320E14/P14/E15/P15/E17/P17)
TMS320P14/P15/P17)
64K-Word
32-Bit
16-Bit
TMS320P14
TMS320LC15
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TMS320P14
Abstract: TMS320LC15
Text: TMS320C1x DIGITAL SIGNAL PROCESSORS SPRS009C – JANUARY 1987 – REVISED JULY 1991 • • • • • • • • • • • • • • • Performance Up to 8.77 MIPs • • All TMS320C1x Devices are Object Code Compatible 144/256-Word On-Chip Data RAM
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TMS320C1x
SPRS009C
144/256-Word
TMS320E14/P14/E15/P15/E17/P17)
TMS320P14/P15/P17)
64K-Word
32-Bit
16-Bit
TMS320P14
TMS320LC15
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QFN36-P-0606-0
Abstract: TC32306FTG QFN36-P FC102 61012 b00111111 AUTOHD 5275S 5275u rf 315mhz
Text: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmiting and
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TC32306FTG
TC32306FTG
QFN36-P-0606-0
QFN36-P
FC102
61012
b00111111
AUTOHD
5275S
5275u
rf 315mhz
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smj320c25
Abstract: No abstract text available
Text: SMJ320C26 DIGITAL SIGNAL PROCESSOR SGUS 016A – AUGUST 1990 – REVISED AUGUST 2001 D 100-ns Instruction Cycle Time D 1568 Words of Configurable On-Chip D D D D D D D D D D D D D D D D D D D D D Data/Program RAM 256 Words of On-Chip Program ROM 128K Words of Data/Program Space
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SMJ320C26
100-ns
SMJ320C25
16-Bit
32-Bit
SMJ320C26BGBM
5962View
8861903XA
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HT82K95E
Abstract: HT82K95A
Text: HT82K95E/HT82K95A USB Multimedia Keyboard Encoder 8-Bit MCU Technical Document • Tools Information · FAQs · Application Note Features · Operating voltage: · 4096´15 program memory ROM fSYS=6M/12MHz: 4.2V~5.5V · 160´8 data memory RAM · Low voltage reset function
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HT82K95E/HT82K95A
6M/12MHz:
16-bit
12MHz
12MHz)
HT82K95E
HT82K95A
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TC58DAM72A1FT00
Abstract: TC58DVM72A1FT00 TC58DAM72F1FT00 TC58DVM72F1FT00 TC58DAM72A1X
Text: TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M u 8 BITS/8M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable
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TC58DVM72A1FT00/
TC58DVM72F1FT00
TC58DAM72A1FT00/
TC58DAM72F1FT00
128-MBIT
16BITS)
TC58DxM72x1xxxx
bytes/264
528-byte/264-words
TC58DAM72A1FT00
TC58DVM72A1FT00
TC58DAM72F1FT00
TC58DVM72F1FT00
TC58DAM72A1X
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Samsung oneNand Mux
Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
MuxOneNAND512
KFM1216Q2M
48FBGA
512Mb
Samsung oneNand Mux
samsung 1Gb nand flash
SAMSUNG 256Mb NAND Flash Qualification Report
KFM1216Q2M
8017h
2112b
1001Ah
803FH
samsung 2GB Nand flash 121 pins
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Untitled
Abstract: No abstract text available
Text: HT82J97E/HT82J97A USB Joystick Encoder 8-Bit MCU Technical Document • Tools Information · FAQs · Application Note Features · Flexible total solution for applications that combine · Two 8-bit indirect addressing registers PS/2 and low-speed USB interface, such as mice,
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HT82J97E/HT82J97A
16-bit
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Untitled
Abstract: No abstract text available
Text: HT82K95E/HT82K95A USB Multimedia Keyboard Encoder 8-Bit MCU Technical Document • Tools Information · FAQs · Application Note Features · Operating voltage: · 160´8 data memory RAM fSYS=6M/12MHz: 3.3V~5.5V · All I/O ports support wake-up options · Low voltage reset function
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HT82K95E/HT82K95A
6M/12MHz:
12MHz
16-bit
12MHz)
15-bitublication.
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10072h
Abstract: structure chart of samsung company
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
KFM1216Q2M
48FBGA
512Mb
10072h
structure chart of samsung company
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Untitled
Abstract: No abstract text available
Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8S2815ET
128Mb
44FBGA,
078000h-07FFFFh
070000h-077FFFh
068000h-06FFFFh
060000h-067FFFh
058000h-05FFFFh
050000h-057FFFh
048000h-04FFFFh
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Untitled
Abstract: No abstract text available
Text: * SYNERGY 256 X 4 ECL RAM SY10422-4 SEMICONDUCTOR Fe a t u r e s • ■ Address access time, tAA :3ns max. d e s c r ip t io n The Synergy SY10422 is a 1024-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10422 is organized as 256words-by-4 bits, meets the standard 10K family signal and
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SY10422-4
SY10422
1024-bit
256words-by-4
SY10422-3DCF
D24-1
F24-1
SY10422-4DCF
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cy7c122
Abstract: CY7C122-35DMB cy7c122-25PC 7C122 CY7C122-25SC CY7C122-35 CY7C122-25DC CY7C122-25
Text: CY7C122 CYPRESS SEMICONDUCTOR 256 x 4 Static R/W RAM Functional Description • 256 x 4 static RAM for control store in high-speed computers The CY7C122 is a high-performance CMOS static R A M organized as 256words by 4 bits. Easy memory expansion is pro
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CY7C122
C122-25SC
CY7C122-25LC
CY7C122-25DM
CY7C122-35PC
CY7C122-35SC
CY7C122-35DC
CY7C122-35LC
CY7C122-35DM
CY7C122-35LMB
cy7c122
CY7C122-35DMB
cy7c122-25PC
7C122
CY7C122-25SC
CY7C122-35
CY7C122-25DC
CY7C122-25
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Untitled
Abstract: No abstract text available
Text: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS057A - APRIL 1095 - REVISED JUNE 1995 * Organization: I • • • • • • • • • • • • • • • • • • • • HKC PACKAGE TOP VIEW - DRAM: 262144 Words x 16 Bits - SAM: 256Words x 16 Bits
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SMJ55166
16-BIT
SGMS057A
256Words
8GMS057A
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TMS320P17
Abstract: d6151 filter lark eng 1D2T ltw 8 pin TMS320P14 TMS320LC15
Text: TMS320C1X DIGITAL SIGNAL PROCESSORS J A N U A H Y 1 9 8 7 — R E V IS E D J U L Y 1991 • Performance Up to 8.77 MIPs Commercial and Military Versions Available • All TMS320C1x Devices are Object Code Compatible Operating Free-Air Temperature . . . 0°C to 70°C
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TMS320C1X
144/256-Word
TMS320E14/P14/E15/P15/E17/P17)
TMS320P14/P15/P17)
64K-Word
32-Bit
TMS320C10
200-ns
TMS320C930)
TMS320P17
d6151
filter lark eng
1D2T
ltw 8 pin
TMS320P14
TMS320LC15
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RAV 14202
Abstract: TMS320C26
Text: SMJ320C26 DIGITAL SIGNAL PROCESSOR 68-P IN GB PIN G R ID A R R A Y C E R A M IC P A C K A G E t TO P V IE W 100-ns Instruction Cycle Time 1568 Words of Configurable On-Chip Data/Program RAM 1 2 3 4 5 6 7 6 9 10 11 256 Words of On-Chip Program ROM 128k Words of Data/Program Space
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SMJ320C26
100-ns
SMJ320C25
16-Bit
32-Bit
RAV 14202
TMS320C26
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tc528126
Abstract: TC528126B
Text: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The
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TC52812GBJ/BZ
072-words
256-words
TC528126BJ/BZ
TC52812GB
tc528126
TC528126B
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27LS00
Abstract: 27LS01 27LS00 RAM Am27LS
Text: Am27LS00/01 Series 256-Bit Low-Power Schottky Bipolar RAM > 3 DISTINCTIVE CHARACTERISTICS • • High Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature • Output preconditioned during write to eliminate the write
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Am27LS00/01
256-Bit
256-words
Am27LS00
MIL-STD-883,
27LS00
27LS01
27LS00 RAM
Am27LS
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m514262
Abstract: MSM514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426
Text: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bits dynam ic RAM and a 512-words b y 4-bits SAM. Its RAM and SAM operate independently and asynchronously.
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MSM514262
144-Word
MSM514262
512-words
SOJ28-P-400-1
50MBB
SOJ32-P-400-1
m514262
MSM514262-10
MSM514262-70
MSM514262-80
ZIP28-P-400
M5M51426
MSM51426
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BR93L66FV-W
Abstract: BR93L66F-W BR93L66RFJ-W BR93L66RFVM-W BR93L66RFV-W BR93L66RF-W BR93L66-W CSSK
Text: O STRU C TU R E O PRO D U CT NAME O P A R T NUMBER O OUTLIN E DIMENSION O B LO C K DIAGRAM OFUNCTION O FE A TU R ES Silicon Monolithic Integrated Circuit 256 x 16 bit Electrically Erasable Programmable ROM B R 9 3 L6 6 /F/R F/FJ/R FJ/FV /R FV /R FV M -W Fig. - 1 Plastic Mold
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BR93L66/F/RF/FJ/RFJ/FV/RFV/RFVM-W
256words
BR93L66FV-W
BR93L66F-W
BR93L66RFJ-W
BR93L66RFVM-W
BR93L66RFV-W
BR93L66RF-W
BR93L66-W
CSSK
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Untitled
Abstract: No abstract text available
Text: T O S H IB A D IG IT A L IN T E G R A T E D CIRCUIT INTEGRATED CIRCUIT TO SHIBA T C 5 2 8 1 2 8 \ P / A J- 1 0 , TC528128AP / A J -12 TECHNICAL DATA SILIC O N G A T E C M O S P R E L IM IN A R Y 131,072W ORDSx88ITS M U LT IPO R T D RA M DESCRIPTION The TC528128AP/ A J is a CMOS multiport memory equipped with a 131,072-words by 8-bits
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TC528128AP
ORDSx88ITS
TC528128AP/
072-words
256-words
TC528128AP/AJ
TC528128AP
DIP40
TC523123A?
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27LS00
Abstract: AM27S00
Text: NOV 2 ì 1991J P ag e 0001 n /2 3 /8 8 1 4 :3 4 :2 9 Tx: A M 2 7 L S 0 0 T E D • Ft: A M D F M T Am27LS00 Series 256-Bit Low-Power Schottky Bipolar RAM > 3 to DISTINCTIVE CHARACTERISTICS • • High spead Internal ECL circuitry for optimum spee d /p o w e r perfor
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n/23/88
AM27LS00
256-Bit
Am27LSOO
256-words
Am27LS00A/00
WF001100
Am27LS00-1
27LS00
AM27S00
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27S23
Abstract: fuses N50 AM27S23 AM27S23A CERAMIC FLATPACK 20pin
Text: a Advanced Micro Devices Am27S23/Am27S23A 2,048-Bit 256x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • High Speed L o w -current P N P inputs ■ Highly reliable, ultra-fast program m ing P latinum -S ilicide fuses H igh-current o p en -co llec to r and three-state
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Am27S23/Am27S23A
048-Bit
256x8)
Am27S23
256-words
KS000010
5912A-007A
27S23
fuses N50
AM27S23A
CERAMIC FLATPACK 20pin
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Untitled
Abstract: No abstract text available
Text: O r e c o m m e n d e d o p e r a t i n g c o n d it io n Parameter Symbol Rating Unit Supply Voltage V cc 1.8—5.5 V Input Voltage V in 0—V cc V O D C OPERATING CH A R A C TER ISTIC S Unless otherwise specified Ta=-40~85°C. Vcc=1.8~5.5V Parameter Specification
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