TCN75MOA
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION ïelwom Semiconductor, Inc. TCN75 2-WIRE SERIAL TEMPERATURE SENSOR AND THERMAL MONITOR FEATURES GENERAL DESCRIPTION • The TCN75 is a serially programmable temperature sensor that notifies the host controller when ambient tem perature exceeds a user-programmed setpoint. Hysteresis
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TCN75
250ja
TCN75
TCN75MOA
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MOSFET 10n60
Abstract: 10N60A ir 10n60 10N60 IXTH10N60 IXTM10N60 10N60R 3N90R
Text: I X Y S CORP IflE D • 4L,ab22b OOOObO'ï ? ■ □IXYS MAXIMUM RATINGS , 'T '2 ° 1 Parameter Sym. Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (Tc =25°C)
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4bab22b
IXTH10N60,
IXTM10N60
55Q/0
IXTH10N60
O-247
300ns,
MOSFET 10n60
10N60A
ir 10n60
10N60
10N60R
3N90R
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OFET
Abstract: No abstract text available
Text: January 2006 SEM IC O N D U C TO R FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V,5.0A,40mQ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS on @VQS=2.5V on special MicroFET
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FDMA430NZ
OFET
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Fc 1237
Abstract: No abstract text available
Text: SbE » r z 7 ^ 7# • 7 c12ti E 3 7 003=1270 S G S -T H O M S O N H53 ■ SGTH 'T t 6 H - 0 5 " s G S-THOMSON TS G 8510 SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER ■ ■ ■ ■ ■ ■ ■ CAUER TYPE 5TH ORDER STOPBAND ATTENUATION : 33dB typ. PASSBAND RIPPLE : 0.05dB (typ.)
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1500kHz
20kHz
DIP-16
TSG85XX
SO-16
TSG8510
DIP-20
DIP-24
DIP-28
Fc 1237
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sae j1850 pwm ford
Abstract: Nippon capacitors MC68HC05X1
Text: HC05X1GRS/D REV 2.1 68HC05X1 SPECIFICATION REV 2.1 General Release June 29, 1994 Motorola Microprocessor & Memory Technologies Group Austin, Texas Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out
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HC05X1GRS/D
68HC05X1
HC05X1GRS/D
sae j1850 pwm ford
Nippon capacitors
MC68HC05X1
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1RF540
Abstract: IRF540S 1RF540S smd diode 2ba smd diode JD 103S AN-994 SMD-220 smd marking JD marking AI
Text: PD-9.898 International ioR Rectifier IRF540S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Description
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IRF540S
SMD-220
50KtJ
1RF540
1RF540S
smd diode 2ba
smd diode JD
103S
AN-994
smd marking JD
marking AI
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1311 amplifier
Abstract: LT1311
Text: L ir m LT1311 TECHNOLOGY Q u a d 12MHz, 145ns Settling Precision C u rre n t-to -V o lta g e C o n v e rte r fo r O p tic a l Disk Drives FC n T U IK S Four Complete Current-to-Voltage Converters 14-Lead Small Outline Package Accurate Gain: 20mV/|jA, ±4%
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LT1311
12MHz,
145ns
28MHz,
23MHz,
1311 amplifier
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c 1406 ha
Abstract: ha 1406 ha IRLIZ24G
Text: PD-9.847 International i& R Rectifier IRLIZ24G HEXFET Power MOSFET • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive • RDS on Specified at Vgs=4V & 5V • Fast Switching • Ease of Paralleling
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IRLIZ24G
O-220
c 1406 ha
ha 1406 ha
IRLIZ24G
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smd diode marking 59A
Abstract: AN-994 IRF630S SMD-220 SMD resistors 59a OA 207 B diode IRG5 X_S marking
Text: PD-9.901 International S Rectifier IRF630S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 - 4 0 0
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IRF630S
SMD-220
smd diode marking 59A
AN-994
IRF630S
SMD resistors 59a
OA 207 B diode
IRG5
X_S marking
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tda 7387
Abstract: tda 7368
Text: y UNITRODE UCC1857 UCC2857 UCC3857 Isolated Boost PFC Preregulator Controller PRELIMINARY FEATURES DESCRIPTION • PFC With Isolation, VQ < V!N The UCC3857 provides all of the control functions necessary for an Iso lated Boost PFC Converter. These converters have the advantage of trans
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UCC1857
UCC2857
UCC3857
UCC3857
tda 7387
tda 7368
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NE571D
Abstract: NE571N NE570N 570 compandor 570N NE570D NE570F NE571F SA571D SA571F
Text: Product sp ecification P h ilip s Se m ico nductors-Signe tics R F Com m unications Products Compandor NE570/571/SA571 PIN CONFIGURATION DESCRIPTION FEA TU R ES The NE570/571 is a versatile low cost dual gain control circuit in which either channel may be used as a dynamic range compressor
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NE570/571/SA571
NE570/571
NE57Q/571
110dB
10-to-1
71100Bb
NE571D
NE571N
NE570N
570 compandor
570N
NE570D
NE570F
NE571F
SA571D
SA571F
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jrc 2274
Abstract: JRC 2284 B ic HS 2272 jrc 2283 2279 JRC jrc op amplifier QL122 integrated circuit TL 2272 EL2250C jrc 2279
Text: EL2250C/EL2450C » i M r f w r mSmwmmmmwCmf HIGH PERFORMANCE ANAUMi tN U G RÄfSB CIRCUITS E L 2 2 5 0 C / E L 2 4 5 0 C 125 MHz Singh Supply Dual/Quad Op A mps F e a tu re s G en era l D e sc rip tio n • Specified for + 3V , + 5V , or + 5V A pplications
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EL2250C/EL245OC
250juA
15Meg
2110k
800e-18
810e-18
bf-50
DDD4b33
jrc 2274
JRC 2284 B
ic HS 2272
jrc 2283
2279 JRC
jrc op amplifier
QL122
integrated circuit TL 2272
EL2250C
jrc 2279
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Untitled
Abstract: No abstract text available
Text: SGR5N60RUF FEATURES N-CHANNEL IGBT D-PAK * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Volatge : VCE sat = 2.0 V @ lc=5A * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls
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SGR5N60RUF
10CTC
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Untitled
Abstract: No abstract text available
Text: SSH45N20A Advanced Power MOSFET FEATURES BV,DSS = 2 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max @ VOS= 200V
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SSH45N20A
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C * K SWITCH 8121
Abstract: No abstract text available
Text: 5V, 1A Low Dropout Linear Regulator with RESET and ENABLE Description The CS-8121 is a 5V precision linear reg ulator with two microprocessor compat ible control functions and protection cir cuitry included on chip. The composite NPN-PNP output pass transistor
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CS-8121
250jaA.
The-220
CS-8121T5
CS-8121TV5
CS-8121TH5
TP-22Q
Q-200
20b7SSb
C * K SWITCH 8121
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Untitled
Abstract: No abstract text available
Text: SEM IC O N D U C TO R FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 5.7A, 30mQ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS on @VQS=2.5V on special
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FDMA420NZ
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13Hz
Abstract: No abstract text available
Text: SbE D • 7121237 0G 3lì204 157 ■ SGTH SCS-THOMSON S G s -T H O N S O N TSG8511 !U SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER ■ ■ ■ ■ ■ ■ ■ CAUER TYPE 7TH ORDER STOPBAND ATTENUATION : 55dB typ PASSBAND RIPPLE : 0.1 dB (typ) CLOCK TO CUT-OFF FREQ. RATIO : 75.3
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TSG8511
1300kHz
TSG85XX
TSG8511
DIP-20
DIP-24
DIP-28
MULTIWATT-15
D031b71
13Hz
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Untitled
Abstract: No abstract text available
Text: X T L i n C A LT1186 B T E C H N O LO G Y D A C P ro g r a m m a b le C C F L S w itc h in g R e g u la to r Bits-to-Nits F€OTUR€S • Wide Battery Input Range: 4.5V to 30V ■ Grounded Lamp or Floating Lamp Configurations ■ Open Lamp Protection
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LT1186
63kHz,
LT1172
100kHz
LT1173
24kHz,
LT1182
200kHz
LT1183
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AC digital voltmeter using 7107
Abstract: digital voltmeter using IC 7107 digital ammeter using IC 7107 digital voltmeter using DVM IC 7107 the pin function of ic 7107 digital ammeter 7107 IL 7107 N zener T 4148 transistor ITT 2907 7107 meters
Text: INSTRUCTION MANUAL FOR EXL Series Laboratory Power Supply Release 1.0 94/01/21 TM-LX01-EM Electronic Measurements Inc. 405 Essex Road Neptune, New Jersey USA 07753 Tel.: (908) 922-9300 FAX: (908) 922-9334 1-800-631-4298 Manual Corrections There are no corrections at this time
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TM-LX01-EM
SW-1126-RG1
F2-0500-S
Quad/120W
MS-6P29-03
MS-6P36-05
MN-832K-10
8x7/16"
MW-8414-42
AC digital voltmeter using 7107
digital voltmeter using IC 7107
digital ammeter using IC 7107
digital voltmeter using DVM IC 7107
the pin function of ic 7107
digital ammeter 7107
IL 7107 N
zener T 4148
transistor ITT 2907
7107 meters
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marking lted
Abstract: marking IF DC converter sot LTC DWG 05-08-1633
Text: rru u m TECHNOLOGY Final Electrical Specifications LT1613 1.4MHz, Single Cell D C /D C C o n v e rte r in 5-Lead SOT-23 D e c e m b e r 1998 FCRTURCS D C S C R IP TIO n • Uses Tiny Capacitors and Inductor ■ Internally Compensated ■ Fixed Frequency 1 .4 M H z Operation
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LT1613
OT-23
OT-23
V/75mA
600kHz
V/200mA
250jaA
500mV
300mA
marking lted
marking IF DC converter sot
LTC DWG 05-08-1633
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irfru230a
Abstract: No abstract text available
Text: IRFR/U230A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 200 V Avalanche Rugged Technology Rugged Gale Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |aA Max. @ VDS= 200V
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IRFR/U230A
Tcs25
irfru230a
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